IRFR13N20 ,Power MOSFET(Vdss=200V, Rds(on)max=0.235ohm, Id=13A)ApplicationsV R max IDSS DS(on) Dl High frequency DC-DC converters200V 0.235Ω 13ABenefitsl Low Gate ..
IRFR13N20D ,200V Single N-Channel HEXFET Power MOSFET in a D-Pak packageApplicationsV R max IDSS DS(on) Dl High frequency DC-DC converters200V 0.235Ω 13ABenefitsl Low Gate ..
IRFR13N20DPBF , SMPS MOSFET ( VDSS=200V , RDS(on)max=0.235Ω , ID=13A )
IRFR13N20DTR ,200V Single N-Channel HEXFET Power MOSFET in a D-Pak packagePD- 93814AIRFR13N20DSMPS MOSFET IRFU13N20D®HEXFET Power MOSFET
IRFR15N20D ,200V Single N-Channel HEXFET Power MOSFET in a D-Pak packageApplicationsV R max IDSS DS(on) Dl High frequency DC-DC converters200V 0.165Ω 17ABenefitsl Low Gate ..
IRFR15N20DTRLP ,200V Single N-Channel HEXFET Power MOSFET in a D-Pak packageApplicationsV R max IDSS DS(on) D High frequency DC-DC converters200V 0.165Ω 17A Lead-FreeBenefit ..
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ISL8009AIRZ-T , 1.5A Low Quiescent Current 1.6MHz High Efficiency Synchronous Buck Regulator
ISL8011IRZ-T , 1.2A Integrated FETs, High Efficiency Synchronous Buck Regulator
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IRFR13N20
Power MOSFET(Vdss=200V, Rds(on)max=0.235ohm, Id=13A)
PD- 93814A
International IRFR13N20D
TOR Rectifier SMPS MOSFET IRFU13N20D
HEXFET® Power MOSFET
Applications VD RD max ID
0 High frequency DC-DC converters 200:3 'eil,',' 13A
Benefits
o Low Gate to Drain Charge to Reduce iii)
Switching Losses LR t
o Fully Characterized Capacitance Including t
Effective Coss to Simplify Design, (See
App. Note AN1001) k
q Fully Characterized Avalanche Voltage IRFBEZKZOD IRFL'J'ngZOD
and Current
Absolute Maximum Ratings
Parameter Max. Units
ID @ Tc = 25°C Continuous Drain Current, N/ss @ 10V 13
ID @ Tc = 100°C Continuous Drain Current, VGS @ 10V 9.2 A
IDM Pulsed Drain Current G) 52
Po @Tc = 25°C Power Dissipation 110 W
Linear Derating Factor 0.71 W/“C
VGS Gate-to-Source Voltage , 30 V
dv/dt Peak Diode Recovery dv/dt © 2.2 V/ns
T: Operating Junction and -55 to + 175
TSTG Storage Temperature Range ''C
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Typical SMPS Topologies
q Telecom 48V input Forward Converters
Notes co through © are on page 10
1
2/ 14100
lRFR13N20D/lRFU13N20D
International
TOR Rectifier
Static @ Tu = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 200 - - V VGS = 0V, ID = 250pA
AV
Rosom Static Drain-to-Source On-Resistance - - 0.235 Q VGs = 10V, ID = 8.0A ©
VGS(th) Gate Threshold Voltage 3.0 - 5.5 V Vos = VGs, ID = 250pA
loss Drain-to-Source Leakage Current - - 25 pA Vos = 200V, VGS = 0V
- - 250 VDs = 160V, VGS = 0V, To = 150°C
less Gate-to-Source Forward Leakage - - 100 n A VGS = 30V
Gate-to-Source Reverse Leakage - - -100 Vss = -30V
Dynamic @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
gts Forward Transconductance 6.2 - - S Vos = 50V, ID = 7.8A
Qg Total Gate Charge - 25 38 ID = 7.8A
Qgs Gate-to-Source Charge - 7.3 11 nC Ws = 160V
di Gate-to-Drain ("Miller") Charge - 12 18 Vss = 10V, @
td(on) Turn-On Delay Time - 11 - VDD = 100V
tr Rise Time - 27 - ns ID = 7.8A
tam) Turn-Off Delay Time - 17 - Rs = 6.89
tr Fall Time - 10 - VGS = 10V ©
Ciss Input Capacitance - 830 - VGs = 0V
Coss Output Capacitance - 140 - I/rss = 25V
Crss Reverse Transfer Capacitance - 35 - pF f = 1.0MHz
Coss Output Capacitance - 990 - Veg = 0V, VDS = 1.0V, f = 1.0MHz
Coss Output Capacitance - 57 - Vss = 0V, Vros = 160V, f = 1.0MHz
Coss eff. Effective Output Capacitance - 59 - VGs = 0V, Vos = 0V to 160V s
Avalanche Characteristics
Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy© - 130 mJ
IAR Avalanche Current© - 7.8 A
EAR Repetitive Avalanche Energy© -- 11 mJ
Thermal Resistance
Parameter Typ. Max. Units
Rouc Junction-to-Case - 1.4
ReJA Junction-to-Ambient (PCB mount)* - 50 "C/W
ReJA Junction-to-Ambient - 110
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current - - 13 MOSFET symbol D
(Body Diode) A showing the
ISM Pulsed Source Current - - 52 integral reverse G
(Body Diode) C) p-n junction diode. s
Vso Diode Forward Voltage - - 1.3 V TJ = 25°C, ls = 7.8A, VGS = 0V ©
tn Reverse Recovery Time - 140 210 ns To = 25''C, IF = 7.8A
Qrr Reverse RecoveryCharge - 750 1120 nC di/dt = 100A/ps @
ton Forward Turn-On Time Intrinsic tum-on time is negligible (turn-on is dominated by LS+LD)
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