IRFR13N15DTRPBF ,150V Single N-Channel HEXFET Power MOSFET in a D-Pak packageApplicationsV R max IDSS DS(on) D High frequency DC-DC converters150V 0.18Ω 14A Lead-FreeBenefits ..
IRFR13N20 ,Power MOSFET(Vdss=200V, Rds(on)max=0.235ohm, Id=13A)ApplicationsV R max IDSS DS(on) Dl High frequency DC-DC converters200V 0.235Ω 13ABenefitsl Low Gate ..
IRFR13N20D ,200V Single N-Channel HEXFET Power MOSFET in a D-Pak packageApplicationsV R max IDSS DS(on) Dl High frequency DC-DC converters200V 0.235Ω 13ABenefitsl Low Gate ..
IRFR13N20DPBF , SMPS MOSFET ( VDSS=200V , RDS(on)max=0.235Ω , ID=13A )
IRFR13N20DTR ,200V Single N-Channel HEXFET Power MOSFET in a D-Pak packagePD- 93814AIRFR13N20DSMPS MOSFET IRFU13N20D®HEXFET Power MOSFET
IRFR15N20D ,200V Single N-Channel HEXFET Power MOSFET in a D-Pak packageApplicationsV R max IDSS DS(on) Dl High frequency DC-DC converters200V 0.165Ω 17ABenefitsl Low Gate ..
ISL78214ARZ , 4A Low Quiescent Current High Efficiency Synchronous Buck Regulator
ISL8009AIRZ-T , 1.5A Low Quiescent Current 1.6MHz High Efficiency Synchronous Buck Regulator
ISL8009AIRZ-T , 1.5A Low Quiescent Current 1.6MHz High Efficiency Synchronous Buck Regulator
ISL8011IRZ-T , 1.2A Integrated FETs, High Efficiency Synchronous Buck Regulator
ISL8011IRZ-T , 1.2A Integrated FETs, High Efficiency Synchronous Buck Regulator
ISL8012IRZ , 2A Low Quiescent Current 1MHz High Efficiency Synchronous Buck Regulator
IRFR13N15DTRPBF
150V Single N-Channel HEXFET Power MOSFET in a D-Pak package
PD - 95549A
Interrj,atif.opal lRFR13N15DPbF
TOR Redntler SMPS MOSFET lRFU13N15DPbF
HEXFET® Power MOSFET
Applications
. High frequency DC-DC converters
o Lead-Free
Voss RDS(on) max ID
150V 0.189 14A
Benefits
o Low Gate-to-Drain Charge to Reduce
Switching Losses tii)) 'git,
o Fully Characterized Capacitance Including Riti7 l RK'
Effective Cogs to Simplify Design, (See
App. Note AN1001)
q Fully Characterized Avalanche Voltage
and Current D-Pak I-Pak
IRFR13N15D IRFU13N15D
Absolute Maximum Ratings
Parameter Max. Units
ID @ Tc = 25°C Continuous Drain Current, VGS @ 10V 14
ID @ Tc = 100°C Continuous Drain Current, VGS @ 10V 9.8 A
IDM Pulsed Drain Current CO 56
Pro @Tc = 25°C Power Dissipation 86 W
Linear Derating Factor 0.57 W/°C
VGS Gate-to-Source Voltage i 30 V
dv/dt Peak Diode Recovery dv/dt © 3.8 V/ns
TJ Operating Junction and -55 to + 175
TSTG Storage Temperature Range °c
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Typical SMPS Topologies
o Telecom 48V input Active Clamp Forward Converter
Notes OD through s are on page 10
1
12/9/04
IlRFR/J13N15DlDbF International
TOR Rectifier
Static @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)ross Drain-to-Source Breakdown Voltage 150 - - V I/cs = 0V, ID = 250pA
AV(BR)DSgATJ Breakdown Voltage Temp. Coemcient - 0.17 - V/°C Reference to 25°C, ID = 1mA ©
RDS(on) Static Drain-to-Source On-Resistance - - 0.18 Q N/ss = 10V, ID = 8.3A ©
VGsoh) Gate Threshold Voltage 3.0 - 5.5 V Vos = Vss, ID = 250PA
bss Drain-to-Source Leakage Current - - 25 pA Vos = 150V, VGS = 0V
- - 250 Vos = 120V, VGS = 0V, TJ = 150°C
I Gate-to-Source Forward Leakage - - 100 n A I/cs = 30V
GSS Gate-to-Source Reverse Leakage - - -100 N/ss = -30V
Dynamic @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
gts Forward Transconductance 5.0 - - S VDs = 50V, ID = 8.3A
% Total Gate Charge - 19 29 ID = 8.3A
Q95 Gate-to-Source Charge - 5.5 8.2 nC Vos = 120V
di Gate-to-Drain ("Miller") Charge - 9.4 14 VGS = 10V, (9
tdon) Turn-On Delay Time - 8.0 - VDD = 75V
t, Rise Time - 26 - ns ID = 8.3A
tuom Turn-Off Delay Time - 12 - Rs = 119
tt Fall Time - 11 - VGs = 10V (9
Ciss Input Capacitance - 620 - VGs = 0V
Coss Output Capacitance - 130 - Vos = 25V
Crss Reverse Transfer Capacitance - 38 - pF f = 1.0MHz
Coss Output Capacitance - 780 - VGS = 0V, Vros = 1.0V, f = 1.0MHz
Cass Output Capacitance - 62 - VGs = 0V, Vros = 120V, f = 1.0MHz
Cass eff. Effective Output Capacitance - 110 - VGs = 0V, VDs = 0V to 120V (9
Avalanche Characteristics
Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy© - 130 mJ
IAR Avalanche Current© - 8.3 A
EAR Repetitive Avalanche Energy© - 8.6 mJ
Thermal Resistance
Parameter Typ. Max. Units
ReJC Junction-to-Case - 1.75
ReJA Junction-to-Ambient (PCB mount)' - 50 °C/W
RQJA Junction-to-Ambient - 1 10
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current - - 14 MOSFET symbol D
(Body Diode) A showing the
ISM Pulsed Source Current integral reverse G
(Body Diode) C) - - 56 p-n junction diode. s
VSD Diode Forward Voltage - - 1.3 V To = 25°C, Is = 8.3A, Vss = 0V (9
trr Reverse Recovery Time - 110 - ns To = 25°C, IF = 8.3A
Qrr Reverse RecoveryCharge - 520 - nC di/dt = 100Alps ©
ton Forward Turn-On Time Intrinsic tum-on time is negligible (tum-on is dominated by LS+LD)
2
