IRFR13N15D ,150V Single N-Channel HEXFET Power MOSFET in a D-Pak packageApplicationsV R max IDSS DS(on) Dl High frequency DC-DC converters150V 0.18Ω 14ABenefitsl Low Gate- ..
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IRFR13N15D-IRFU13N15D
150V Single N-Channel HEXFET Power MOSFET in a D-Pak package
PD - 93905A
(nterrj,ahtryo 1RFR13N15D
TOR Rectifier SMPS MOSFET |RFU13N15D
HEXFET© Power MOSFET
Applications
V R max I
0 High frequency DC-DC converters DSS DS(on) D
150V 0.189 14A
Benefits
o Low Gate-to-Drain Charge to Reduce
Switching Losses fit)
. Fully Characterized Capacitance Including Nd ' '
Effective Cogs to Simplify Design, (See t N
App. Note AN1001) N
0 Fully Characterized Avalanche Voltage
and Current D-Pak I-Pak
IRFR13N15D IRFU13N15D
Absolute Maximum Ratings
Parameter Max. Units
ID @ Tc = 25°C Continuous Drain Current, VGS @ 10V 14
ID @ Tc = 100°C Continuous Drain Current, VGS @ 10V 9.8 A
IDM Pulsed Drain Current C) 56
Pro @Tc = 25°C Power Dissipation 86 W
Linear Derating Factor 0.57 W/°C
VGS Gate-to-Source Voltage i 30 V
dv/dt Peak Diode Recovery dv/dt © 3.8 V/ns
TJ Operating Junction and -55 to + 175
TSTG Storage Temperature Range °c
Soldering Temperature, tor 10 seconds 300 (1.6mm from case )
Typical SMPS Topologies
. Telecom 48V input Active Clamp Forward Converter
Notes C) through S are on page 10
1
6/29/00
IRFR'13ll15D/lRFJ13lll5D International
TOR Rectifier
Static @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)ross Drain-to-Source Breakdown Voltage 150 - - V VGS = 0V, ID = 250pA
AV(BR)DSgATJ Breakdown Voltage Temp. Coemcient - 0.17 - V/°C Reference to 25°C, ID = 1mA ©
RDS(on) Static Drain-to-Source On-Resistance - - 0.18 n N/ss = 10V, ID = 8.3A ©
VGsoh) Gate Threshold Voltage 3.0 - 5.5 V Vos = Vss, ID = 250PA
bss Drain-to-Source Leakage Current - - 25 pA Vos = 150V, VGS = 0V
- - 250 Vos = 120V, VGS = 0v, TJ = 150°C
I Gate-to-Source Forward Leakage - - 100 n A VGS = 30V
GSS Gate-to-Source Reverse Leakage - - -100 N/ss = -30V
Dynamic @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
gts Forward Transconductance 5.0 - - S VDs = 50V, ID = 8.3A
% Total Gate Charge - 19 29 ID = 8.3A
Q95 Gate-to-Source Charge - 5.5 8.2 nC Vos = 120V
di Gate-to-Drain ("Miller") Charge - 9.4 14 VGS = 10V, GD
tdon) Turn-On Delay Time - 8.0 - VDD = 75V
t, Rise Time - 26 - ns ID = 8.3A
tuom Turn-Off Delay Time - 12 - Rs = 119
tt Fall Time - 11 - VGs = 10V ©
Ciss Input Capacitance - 620 - VGs = 0V
Coss Output Capacitance - 130 - Vos = 25V
Crss Reverse Transfer Capacitance - 38 - pF f = 1.0MHz
Coss Output Capacitance - 780 - VGS = 0V, Vros = 1.0V, f = 1.0MHz
Cass Output Capacitance - 62 - Vss = 0V, Vros = 120V, f = 1.0MHz
Cass eff. Effective Output Capacitance - 110 - VGs = 0V, VDs = 0V to 120V s
Avalanche Characteristics
Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy© - 130 mJ
IAR Avalanche Current0) - 8.3 A
EAR Repetitive Avalanche EnergyCD - 8.6 mJ
Thermal Resistance
Parameter Typ. Max. Units
Rac Junction-to-Case - 1.75
ReJA Junction-to-Ambient (PCB mount)' - 50 °C/W
RNA Junction-to-Ambient - 1 10
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current - - 14 MOSFET symbol D
(Body Diode) A showing the
ISM Pulsed Source Current integral reverse G
(Body Diode) (D - - 56 p-n junction diode. s
VSD Diode Forward Voltage - - 1.3 V To = 25°C, Is = 8.3A, Vss = 0V ©
trr Reverse Recovery Time - 110 - ns To = 25°C, IF = 8.3A
Qrr Reverse RecoveryCharge - 520 - nC di/dt = 100A/ps ©
ton Fon/vard Turn-On Time Intrinsic tum-on time is negligible (tum-on is dominated by L5+LD)
2
