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IRFR120ZTRPBF
100V Single N-Channel HEXFET Power MOSFET in a D-Pak package
lntema
ISBR Re
Features
Lead-Free
Description
This HEXFET6 Power MOSFET utilizes the latest
processing techniques to achieve extremely low on-
resistance per silicon area. Additional features of
this design area175°Cjunction operatingtemperature,
fast switching speed and improved repetitive
avalanche rating .These features combine to make
this design an extremely efficient and reliable device
for use in a wide variety of applications.
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
ctifier
PD - 957728
lRFFl120ZPbF
lRFU120ZPbF
HEXFET®PowerMOSFET
VDSS = 100V
RDS(on) = 190mQ
ID = 8.7A
IRFR120ZPbF
IRFU120ZPbF
Absolute Maximum Ratings
Parameter Max. Units
ID @ To = 25°C Continuous Drain Current, Vss @ 10V (Silicon Limited) 8.7
ID @ Tc = 100°C Continuous Drain Current, Vss @ 10V 6.1 A
IDM Pulsed Drain Current LO 35
PD @TC = 25°C Power Dissipation 35 W
Linear Derating Factor 0.23 W/°C
VGS Gate-to-Source Voltage t 20 V
EAS(Thermallylimited) Single Pulse Avalanche Energy© 18 mJ
EAS (Tested ) Single Pulse Avalanche Energy Tested Value © 20
IAR Avalanche Current LO See Fig.12a, 12b, 15, 16 A
EAR Repetitive Avalanche Energy © m J
To Operating Junction and -55 to + 175
TSTG Storage Temperature Range ''C
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting Torque, 6-32 or M3 screw 10 Ibf-in (1.1N'm)
Thermal Resistance
Parameter Typ. Max. Units
ReJC Junction-to-Case - 4.28
Fu, Junction-to-Ambient (PCB mount) co _ 40 °C/W
ReJA Junction-to-Ambient -- 110
HEXFETO is a registered trademark of International Rectifier.
1
09/16/10
IRFR/U120ZPbF International
TOR Rectifier
Electrical Characteristics © TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 100 - - V Vas = 0V, ID = 250uA
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coefficient - 0.084 - V/°C Reference to 25°C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance - 150 190 mn Vas = 10V, ID = 5.2A ©
VGS(th) Gate Threshold Voltage 2.0 - 4.0 V Vos = Vas, b = 250pA
gfs Forward Transconductance 16 - - S Vos = 25V, b = 5.2A
loss Drain-to-Source Leakage Current - - 20 PA Vos = 100V, Vas = 0V
- - 250 Vos = 100V, Vas = 0V, TJ = 125°C
less Gate-to-Source Forward Leakage - - 200 nA Vas = 20V
Gate-to-Source Reverse Leakage - - -200 Vas = -20V
q, Total Gate Charge - 6.9 10 ID = 5.2A
Qgs Gate-to-Source Charge - 1.6 - nC Vos = 80V
di Gate-to-Drain ("Miller") Charge - 3.1 - Vas = 10V ©
td(on) Turn-On Delay Time - 8.3 - VDD = 50V
t, Rise Time - 26 - b = 5.2A
ton Turn-Off Delay Time - 27 - ns Rs = 53 Q
t, Fall Time - 23 - Ves = 10V ©
Lo Internal Drain Inductance - 4.5 - Between lead, _ D
nH 6mm (0.25in.) / l
Ls Internal Source Inductance - 7.5 - from package 6&4 /
and center of die contact s
Ciss Input Capacitance --- 310 --.- l/ss = 0V
Coss Output Capacitance - 41 - Vos = 25V
Crss Reverse Transfer Capacitance --- 24 - pF f = 1.0MHz
Coss Output Capacitance - 150 - Vss = 0V, Vos = 1.0V, f = 1.0MHz
Coss Output Capacitance -__ 26 -- Vss = OV, Vos = 80V, f = 1.0MHz
Coss eff. Effective Output Capacitance - 57 - Vss = 0V, VDS = 0V to 80V ©
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
IS Continuous Source Current --- --- 8.7 MOSFET symbol D
(Body Diode) A showing the
ISM Pulsed Source Current --- --- 35 integral reverse a
(Body Diode) (D p-n junction diode. e
VSD Diode Forward Voltage -- - 1.3 V TJ = 25°C, IS = 5.2A, Vas = 0V ©
tr, Reverse Recovery Time - 24 36 ns TJ = 25°C, IF = 5.2A, VDD = 50V
A, Reverse Recovery Charge - 23 35 nC di/dt = 100A/ps oo
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
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