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Absolute Maximum Ratings
Param eter Max. Units
ID tp To = 25''C Cont ..
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TOR Rectifier
PD-9.523D
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IRFR120NTRPBF
100V Single N-Channel HEXFET Power MOSFET in a D-Pak package
PD - 95067A
IRFR/U'120NPbF
International
Tart, Rectifier
a Surface Mount(IRFR120N) D -
V - 100V
. Straight Lead (|RFU120N) DSS
. Advanced Process Technology R = 0219
o FastSwitching G DS(on)
a Fully Avalanche Rated ID = 9.4A
q Lead-Free S
Description
Fifth Generation HEXFETsfrom International Rectifier
utilize advanced processing techniques to achievethe
lowest possible on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient device for use in a wide ,
variety of applications. D-PAK l-PAK
TO-252AA TO-251AA
The D-PAK is designed for surface mounting using
vapor phase, infrared, or wave soldering techniques.
The straight lead version (IRFU series) is for through-
hole mounting applications. Power dissipation levels
up to 1.5 watts are possible in typical surface mount
applications.
Absolute Maximum Ratings
Param eter Max. Units
b Cl Tc = 25''C Continuous Drain Current, I/ss Cl 10V 9.4
ID (il Tc =100°C Continuous Drain Current, Veg Cl 10V 6.6 A
bs, Pulsed Drain Current G)3) 38
PD @TC = 25°C Power Dissipation 48 W
Linear Derating Factor 0.32 W/°C
I/ss Gate-to-Source Voltage t 20 V
EAS Single Pulse Avalanche Energy®© 91 mJ
IAR Avalanche CurrentC0© 5.7 A
EAR Repetitive Avalanche EnergyCOC0 4.8 m,)
dv/dt Peak Diode Recovery dv/dt Q 5.0 V/ns
TJ Operating Junction and -55 to+ 175
TSTS Storage Temperature Range "C
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Thermal Resistance
Parameter Typ. Max. Units
Ras; Junction-to-Case - 3.1
Rem Junction-to-Ambient (PCB mount) ** - 50 °C/W
Rem Junction-to-Ambient - 110
1
12/9/04
IRFR/U120NPbF International
TOR Rectifier
Electrical Characteristics @ Tu = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(Bppss Drain-to-Source Breakdown Voltage 100 - - V Veg = OV, ID = 250uA
AVBRJDSSIATJ Breakdown Voltage Temp. CoefMient - (112 - 1/f'C Reference to 25''C, ID = 1mA
RDS(0n) Static Drain-to-Source On-Resistance - - 0.21 N/ss = 10V, b = 5.6A Cr)
Vesun) Gate Threshold Voltage 2.0 - 4.0 V l/ce = Veg, lo = 250pA
gts Forward Transconductance 2.7 - - S l/ce = 25V, ID = 5.7A©
bss Drain-toSource Leakage Current L- c. 22550 pA "it , "Sli)),,'):,'-,'],,, = 150°C
loss Gate-to-Source Forward Leakage - - 100 n A Veg = UN
Gate-to-Source Reverse Leakage - - M00 Veg = -20V
% Total Gate Charge - - 25 ID = 5.7A
Qgs Gate-to-Source Charge - - 4.8 n0 V03 = 80V
di Gate-to-Drain ("Miller") Charge - - 11 Veg = 10V, See Fig. 6 and 13 C9t)
tam) Turn-On Delay Time - 4.5 - VDD = 50V
tr Rise Time - 23 - ns ID = 5.7A
tam) Turn-Off Delay Time - 32 - Rs = 22n
t, Fall Time 23 RD = 859, See Fig. 10 @©
LD Internal Drain Inductance - 4.5 - nH J,,e,t,1,Ci.n/,i,ii,Ci' {2)
LS Internal Source Inductance - 7.5 - from package . G a
and center of die contacts s
CISS Input Capacitance - 330 - Veg = 0V
COSS Output Capacitance - 92 - pF l/ce = 25V
Crss Reverse Transfer Capacitance - 54 - f = 1.0MHz, See Fig. 5©
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current - - 9 4 MOSFET symbol D
(Body Diode) . A showing the
ISM Pulsed Source Current integral reverse G
(Body Diode) C)6) - - 38 p-n junction diode. s
VSD Diode Forward Voltage - - 1.3 V To = 25''C, Is = 5.5A, I/ss = 0V Ci)
trr Reverse Recovery Time - 99 150 ns TJ = 25''C, IF = 5.7A
Q,, Reverse RecoveryCharge - 390 580 nC di/dt = 100A/ps Cots)
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by Ls+ Lo)
Notes:
C) Repetitive rating; pulse width limited by GD Pulse width I 300ps; duty cycle g 2%
max. junction temperature. ( See fig, 11 )
© VDD = 25V, starting Tu = 25°C, L = 4.7mH © This is applied for I-PAK, Ls of D-PAK is measured between lead and
Rs = 259, IAS = 5.7A. (See Figure 12) center of die contact
© lsc, C 5.7A, di/dt I 240A/ps, VDD SV(Bmoss. © Uses IRF520N data and test conditions
TJ 5 175°C
" When mounted on 1" square PCB (FR-4 or G-10 Material ) .
For recommended footprint and soldering techniques refer to application note #AN-994
2
