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IRFR120N-IRFR120NPBF-IRFR120NTR-IRFR120NTRR-IRFU120N-IRFU120NPBF
100V Single N-Channel HEXFET Power MOSFET in a D-Pak package
International PD-91365B
Tart, Rectifier IRFR/J120N
HEXFET® Power MOSFET
0 Surface Mount (IRFR120N) D
o Straight Lead (IRFU120N) VDSS = 100V
0 Advanced Process Technology
0 Fast Switching -
0 Fully Avalanche Rated G " RDS(on) - 0219
Description ID = 9.4A
Fifth Generation HEXFETs from International Rectiher S
utilize advanced processing techniques to achieve the
lowest possible on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efhcient device for use in a wide
variety of applications.
The D-PAK is designed for surface mounting using '
vapor phase, infrared, or wave soldering techniques. D-PAK l-PAK
The straight lead version (IRFU series) is for through- TO-252AA T0-251AA
hole mounting applications. Power dissipation levels
up to 1.5 watts are possible in typical surface mount
applications.
Absolute Maximum Ratings
Parameter Max. Units
ID @ Tc = 25°C Continuous Drain Current, VGS @ 10V 9.4
ID @ To = 100°C Continuous Drain Current, VGS @ 10V 6.6 A
IDM Pulsed Drain Current C06) 38
Pro @Tc = 25°C Power Dissipation 48 W
Linear Derating Factor 0.32 W/°C
Ves Gate-to-Source Voltage i 20 V
EAS Single Pulse Avalanche Energy©© 91 mJ
IAR Avalanche Current(0© 5.7 A
EAR Repetitive Avalanche Energyc0© 4.8 mJ
dv/dt Peak Diode Recovery dv/dt © 5.0 V/ns
TJ Operating Junction and -55 to + 175
TSTG Storage Temperature Range °c
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
Thermal Resistance
Parameter Typ. Max. Units
ReJC Junction-to-Case - 3.1
ReJA Junction-to-Ambient (PCB mount) ** - 50 "CA/V
RQJA Junction-to-Ambient - 1 10
1
5/11/98
IRFRIU120N International
TOR Rectifier
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DS$ Drain-to-Source Breakdown Voltage 100 - - V VGs = 0V, ID = 250pA
AV(BR)DS$IATJ Breakdown Voltage Temp. Coemcient - 0.12 - V/°C Reference to 25°C, ID = 1mA
Rrosom Static Drain-to-Source On-Resistance - - 0.21 VGs = 10V, ID = 5.6A ©
VGS(th) Gate Threshold Voltage 2.0 - 4.0 V I/ns = VGs, ID = 250pA
gts Forward Transconductance 2.7 - - S Vos = 25V, ID = 5.7A©
loss Drain-to-Source Leakage Current _- _- 2255:) pA VS: , 2583YV::S=_OSIYTJ = 150°C
less Gate-to-Source Forward Leakage - - 100 n A Vss = 20V
Gate-to-Source Reverse Leakage - - -100 VGs = -20V
Qg Total Gate Charge - - 25 ID = 5.7A
Qgs Gate-to-Source Charge - - 4.8 nC Vos = 80V
di Gate-to-Drain ("Miller") Charge - - 11 VGS = 10V, See Fig. 6 and 13 ©©
tum”) Turn-On Delay Time - 4.5 - VDD = 50V
tr Rise Time - 23 - ns ID = 5.7A
tdom Turn-Off Delay Time - 32 - Rs = 22n
" Fall Time 23 RD = 8.69, See Fig. 10 ©©
u, Internal Drain Inductance - 4.5 - nH Between lead, D
6mm (0.25in.) JC )
Ls Internal Source Inductance - 7.5 - from package . G
and center of die contacts s
Ciss Input Capacitance - 330 - VGS = 0V
Cass Output Capacitance - 92 - pF VDS = 25V
Crss Reverse Transfer Capacitance - 54 - f = 1.0MHz, See Fig. 5©
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current - - 9 4 MOSFET symbol D
(Body Diode) . A showing the
ISM Pulsed Source Current integral reverse G
(Body Diode) coco - - 38 p-n junction diode. s
Vso Diode Forward Voltage - - 1.3 V T: = 25°C, Is = 5.5A, Vss = 0V ©
tn Reverse Recovery Time - 99 150 ns T: = 25°C, IF = 5.7A
Qrr Reverse RecoveryCharge - 390 580 nC di/dt = 100A/us Cr)6)
ton Forward Turn-On Time Intrinsic tum-on time is negligible (tum-on is dominated by LS+LD)
Notes:
(O Repetitive rating; pulse width limited by © Pulse width f 300ps; duty cycle f 2%
max. junction temperature. ( See rig. 11 )
© VDD = 25V, starting Tu = 25°C, L = 4.7mH © This is applied tor I-PAK, Ls of D-PAK is measured between lead and
Rs = 259, bus = 5.7A. (See Figure 12) center of die contact
© ' S 5.7A, di/dt S 240A/ps, VDD SV
T J f 175°C
** When mounted on 1" square PCB (FR-4 or G-10 Material ) .
For recommended footprint and soldering techniques refer to application note #AN-994
2
