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IRFR120ATM from FAI,Fairchild Semiconductor

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IRFR120ATM

Manufacturer: FAI

100V N-Channel A-FET / Substitute of IRFR120

Partnumber Manufacturer Quantity Availability
IRFR120ATM FAI 2502 In Stock

Description and Introduction

100V N-Channel A-FET / Substitute of IRFR120 The IRFR120ATM is a Power MOSFET manufactured by Infineon Technologies. Below are the factual details from Ic-phoenix technical data files:

### **Manufacturer:**  
Infineon Technologies  

### **FAI (First Article Inspection) Specifications:**  
- **Part Number:** IRFR120ATM  
- **Type:** N-Channel Power MOSFET  
- **Package:** TO-252 (DPAK)  
- **Drain-Source Voltage (VDS):** 100V  
- **Continuous Drain Current (ID):** 8.7A  
- **Pulsed Drain Current (IDM):** 34A  
- **Power Dissipation (PD):** 45W  
- **Gate-Source Voltage (VGS):** ±20V  
- **On-Resistance (RDS(on)):** 0.27Ω (max) at VGS = 10V  
- **Threshold Voltage (VGS(th)):** 2V (min) to 4V (max)  
- **Total Gate Charge (Qg):** 12nC (typ)  
- **Operating Temperature Range:** -55°C to +175°C  

### **Descriptions and Features:**  
- **Technology:** Advanced HEXFET® MOSFET technology for high efficiency.  
- **Applications:** Switching regulators, motor control, DC-DC converters, and power management.  
- **Fast Switching:** Low gate charge for improved switching performance.  
- **Avalanche Energy Rated:** Robust design for reliable operation.  
- **Lead-Free & RoHS Compliant:** Meets environmental standards.  

This information is sourced from Infineon's official datasheet for the IRFR120ATM.

Partnumber Manufacturer Quantity Availability
IRFR120ATM FSC 10000 In Stock

Description and Introduction

100V N-Channel A-FET / Substitute of IRFR120 The IRFR120ATM is a power MOSFET manufactured by Infineon Technologies. Below are the factual details from Ic-phoenix technical data files regarding its FSC specifications, descriptions, and features:  

### **FSC (Federal Supply Code) Specifications:**  
- **FSC Code:** 5961 (Semiconductor Devices and Associated Hardware)  
- **Part Number:** IRFR120ATM  

### **Descriptions:**  
- **Type:** N-Channel Power MOSFET  
- **Technology:** HEXFET® (High-Efficiency MOSFET)  
- **Package:** TO-252 (DPAK)  
- **Mounting Type:** Surface Mount  
- **Operating Temperature Range:** -55°C to +175°C  

### **Features:**  
- **Drain-Source Voltage (VDS):** 100V  
- **Continuous Drain Current (ID):** 5.3A  
- **Pulsed Drain Current (IDM):** 21A  
- **On-Resistance (RDS(on)):** 0.27Ω (max) @ VGS = 10V  
- **Gate-Source Voltage (VGS):** ±20V  
- **Power Dissipation (PD):** 38W  
- **Fast Switching Speed**  
- **Avalanche Energy Rated**  
- **Lead-Free and RoHS Compliant**  

This information is based on the manufacturer's datasheet and FSC classification.

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