IRFR1205TRRPBF ,55V Single N-Channel HEXFET Power MOSFET in a D-Pak packageapplications.TO-252AA TO-251AAWuan-eDem.
Absolute Maximum Ratings
Parameter Max. Units
ID tp ..
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IRFR1205TRRPBF
55V Single N-Channel HEXFET Power MOSFET in a D-Pak package
International
Tart, Rectifier
Ultra Low On-Resistance
Surface Mount (|RFR1205)
Straight Lead (|RFU1205)
Fast Switching
Fully Avalanche Rated
Lead-Free
Description
Fifth Generation HEXFETsfrom International Rectifier
utilize advanced processing techniques to achievethe
lowest possible on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient device for use in a wide
variety of applications.
The D-PAK is designed for surface mounting using
vapor phase, infrared, or wave soldering techniques.
The straight lead version (IRFU series) is for through-
hole mounting applications. Power dissipation levels
up to 1.5 watts are possible in typical surface mount
applications.
Absolute Maximum Ratings
PD - 95600A
IRFR/U1205PbF
HEXFET© Power MOSFET
VDSS = 55V
A RDS(on) = 0.0279
s ID = 44Ae
D-PAK I-PAK
TO-252AA TO-251AA
Parameter Max. Units
b (P Tc = 25''C Continuous Drain Current, I/ss Cl 10V MS
ID (il TC = 100''C Continuous Drain Current, Ves (i) 10V 31 S A
bs, Pulsed Drain Current COC) 160
PD @Tc = 25°C Power Dissipation 107 W
Linear Derating Factor 0.71 Wf'C
I/ss Gate-to-Source Voltage , 20 V
EAS Single Pulse Avalanche Energy@© 210 mJ
IAR Avalanche Current0)(t) 25 A
EAR Repetitive Avalanche Energy®® 11 mJ
dv/dt Peak Diode Recovery dv/dt S 5.0 V/ns
T: Operating Junction and -55 to + 175
TSTG Storage Temperature Range 00
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Thermal Resistance
Parameter Typ. Max. Units
RM Junction-to-Case - 1.4
RM Junction-toAmbient (PCB mount) ** - 50 ''C/W
RQJA Junction-to-Ambient - 110
1
12/9/04
IRFR/U1205PbF International
TOR Rectifier
Electrical Characteristics @ To = 25''C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BRpss Drain-to-Source Breakdown Voltage 55 - - V Vos = ov, ID = 250pA
AVFR)r)slTo Breakdown Voltage Temp. CoetrIcient - 0.055 - V/°C Reference to 25''C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance - - 0.027 Vss = 10V, ID = 26A ©
V68(th) Gate Threshold Voltage 2.0 - 4.0 V Ws = Vos, ID = 250pA
gts Forward Transconductance 17 - - S Ws = 25V, ID = 25A©
bss Drain-to-Source Leakage Current I] I] fi pA VS: , ix x: , g, TJ = 150°C
less Gate-to-Source Forward Leakage - - 100 nA Vss = 20V
Gate-to-Source Reverse Leakage - - -100 Veg = -20V
% Total Gate Charge - - 65 ID = 25A
Qgs Gate-tty-Source Ch arge - - 12 n0 Ws = 44V
di Gate-to-Drain ("Miller") Charge - - 27 Vss = 10V, See Fig. 6 and 13 C9(2)
td(on) Turn-On Delay Time - 7.3 - VDD = 28V
tr Rise Time - 69 - ns ID = 25A
td(om Turn-Off Delay Time - 47 - Rs = 12n
t, Fall Time 60 RD =1.1n,See Fig. 10 Coe
. Between lead, D
LD Internal Drain Inductance - 4.5 - nH 6mm (0.25in.) E )
Ls Internal Source Inductance - 7.5 - from package . G
and center of die contact@ s
Ces Input Capacitance - 1300 - Vos = 0V
Coss Output Capacitance - 410 - pF Ws = 25V
Crss Reverse Transfer Capacitance - 150 - f = 1.0MHz, See Fig. "
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current - - 44© MOSFET symbol D
(Body Diode) A showing the
ISM Pulsed Source Current integral reverse G
(Body Diode) COC) - - 160 p-n junction diode. S
VSD Diode Forward Voltage - - 1.3 V To = 25''C, Is = 22A, Vos = 0V G)
trr Reverse Recovery Time - 65 98 ns Tu = 25''C, IF =25A
er Reverse RecoveryCharge - 160 240 nC di/dt = 100A/ps C9C)
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
co Repetitive rating; pulse width limited by C4) Pulse width C 300ps: duty cycle C 2%.
max. junction temperature. ( See fig. 11 )
. © Calculated continuous current based on maximum allowable junction
© Vcc = 25V, starting To = 25''C, L = 470pH
temperature: Package limitation current = 20A
R6 = 25n, 'AS = 25A. (See Figure 12) © This is applied for l-PAK, Ls of D-PAK is measured between lead and
© ' I 25A, di/dt I 320A/ps, VDD S V(Bppss. center of die contact
TJS17SDC © Uses IRFZ44N data and test conditions
** When mounted on 1" square PCB (FR-4 or G-10 Material ) .
For recommended footprint and soldering techniqu es refer to application note #AN-994
2
