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IRFR1205TRRPBF from IR,International Rectifier

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15.625ms

IRFR1205TRRPBF

Manufacturer: IR

55V Single N-Channel HEXFET Power MOSFET in a D-Pak package

Partnumber Manufacturer Quantity Availability
IRFR1205TRRPBF IR 10000 In Stock

Description and Introduction

55V Single N-Channel HEXFET Power MOSFET in a D-Pak package The IRFR1205TRRPBF is a power MOSFET manufactured by Infineon Technologies. Below are its key specifications, descriptions, and features:

### **Specifications:**  
- **Manufacturer:** Infineon Technologies  
- **Part Number:** IRFR1205TRRPBF  
- **Type:** N-Channel Power MOSFET  
- **Drain-Source Voltage (VDS):** 55V  
- **Continuous Drain Current (ID):** 44A (at 25°C)  
- **Pulsed Drain Current (IDM):** 176A  
- **Gate-Source Voltage (VGS):** ±20V  
- **Power Dissipation (PD):** 150W (at 25°C)  
- **On-Resistance (RDS(on)):** 0.027Ω (max at VGS = 10V, ID = 22A)  
- **Threshold Voltage (VGS(th)):** 2V to 4V  
- **Input Capacitance (Ciss):** 1800pF (typical)  
- **Output Capacitance (Coss):** 600pF (typical)  
- **Reverse Transfer Capacitance (Crss):** 150pF (typical)  
- **Switching Speed:** Fast switching capability  
- **Package:** TO-252 (DPAK)  

### **Description:**  
The IRFR1205TRRPBF is a high-performance N-Channel MOSFET designed for power management applications. It features low on-resistance and high current handling, making it suitable for switching and amplification in power supplies, motor control, and DC-DC converters.  

### **Features:**  
- Low RDS(on) for reduced conduction losses  
- High current capability  
- Fast switching performance  
- Improved thermal characteristics  
- Avalanche energy specified  
- Lead-free and RoHS compliant  

This MOSFET is commonly used in applications requiring efficient power handling and switching performance.

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