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IRFR1205 from IR,International Rectifier

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IRFR1205

Manufacturer: IR

55V Single N-Channel HEXFET Power MOSFET in a D-Pak package

Partnumber Manufacturer Quantity Availability
IRFR1205 IR 25200 In Stock

Description and Introduction

55V Single N-Channel HEXFET Power MOSFET in a D-Pak package The IRFR1205 is a Power MOSFET manufactured by International Rectifier (IR). Below are the key specifications, descriptions, and features based on the manufacturer's data:

### **Manufacturer:**  
International Rectifier (IR)  

### **Part Number:**  
IRFR1205  

### **Type:**  
N-Channel Power MOSFET  

### **Key Specifications:**  
- **Drain-Source Voltage (VDSS):** 55V  
- **Continuous Drain Current (ID):** 44A (at 25°C)  
- **Pulsed Drain Current (IDM):** 176A  
- **RDS(on) (Max):** 0.027Ω (at VGS = 10V, ID = 22A)  
- **Gate-Source Voltage (VGS):** ±20V  
- **Power Dissipation (PD):** 94W (at 25°C)  
- **Operating Junction Temperature (TJ):** -55°C to +175°C  
- **Avalanche Energy (EAS):** 300mJ  

### **Package:**  
- **TO-252 (DPAK)**  

### **Features:**  
- **Advanced HEXFET® Technology** for high efficiency and low conduction losses.  
- **Low On-Resistance (RDS(on))** for reduced power dissipation.  
- **Fast Switching Speed** for high-frequency applications.  
- **Avalanche Energy Rated** for ruggedness in inductive load switching.  
- **Fully Characterized for Linear Mode Operation** for improved reliability.  

### **Applications:**  
- DC-DC Converters  
- Motor Control  
- Power Management  
- Switching Power Supplies  
- Battery Protection Circuits  

This information is sourced from the manufacturer's datasheet. For detailed performance curves and application notes, refer to the official IRFR1205 datasheet.

Application Scenarios & Design Considerations

55V Single N-Channel HEXFET Power MOSFET in a D-Pak package

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