IRFR1010ZTRL ,Leaded 55V Single N-Channel HEXFET Power MOSFET in a D-Pak packageapplications.IRFR1010Z IRFU1010ZAbsolute Maximum RatingsParameter Max. Units(Silicon Limited)I @ T ..
IRFR110 ,4.7A, 100V, 0.540 Ohm, N-Channel Power MOSFETsInternational
TOR
Rectifier
PD-9
.524D
1RFR110
HEXFET® Power MOSFET
0 Dynamic ..
IRFR110TRPBF , Dynamic dV/dt Rating Repetitive Avalanche Rated
IRFR110TRPBF , Dynamic dV/dt Rating Repetitive Avalanche Rated
IRFR120 ,8.4A, 100V, 0.270 Ohm, N-Channel Power MOSFETsapplications.
Absolute Maximum Ratings
IRFU120
D-PAK
TO-252AA
I-PAK
TO-251AA
DATA
..
IRFR120. ,8.4A, 100V, 0.270 Ohm, N-Channel Power MOSFETsapplications.
Absolute Maximum Ratings
IRFU120
D-PAK
TO-252AA
I-PAK
TO-251AA
DATA
..
ISL6744AB ,Intermediate Bus PWM Controllerapplications using full and half-bridge • 100µA Start-up Currenttopologies for unregulated DC/DC co ..
ISL6801AB ,High Side Driver, N-Channel MOSFET, Bootstrap Supplyfeatures two output stages pinned out • Switching Frequency . . . . . . . . . . . . . . . . . . . . ..
ISL6801AB-T ,High Voltage Bootstrap High Side DriverBlock DiagramV VBCCUVDETECTINHOHLEVEL&OUTPUT&SHIFTERRESHOLONDELAYOFFGND VSPin DescriptionsPIN NUMBE ..
ISL6840IB ,Improved industry standard single-ended current mode PWM controller.ApplicationsISL6841 7.0 50% Telecom and Datacom PowerISL6842 14.4V 100% Wireless Base Station Pow ..
ISL6840IU ,Improved industry standard single-ended current mode PWM controller.ApplicationsISL6841 7.0 50% Telecom and Datacom PowerISL6842 14.4V 100% Wireless Base Station Pow ..
ISL6840IUZ ,Improved industry standard single-ended current mode PWM controller.applications Fast transient response with peak current mode controlincluding boost, flyback, and ..
IRFR1010ZTRL
Leaded 55V Single N-Channel HEXFET Power MOSFET in a D-Pak package
PD - 96897
International
TOR Rectifier AUTOMOTIVE MOSFET |RFR101OZ
llRFU1 01 OZ
Features
.Advanced Process Technology HEXFET® Power MOSFET
uUItra Low On-Resistance D
.175°C Operating Temperature
.Fast Switching VDSS = 55V
.Repetitive Avalanche Allowed up to ijax
A RDS(0n) = 7.5mQ
Description
Specifically designed for Automotive applications, ID = 42A
this HEXFET6 Power MOSFET utilizes the latest
processing techniques to achieve extremely low
on-resistance per silicon area. Additional features
of this design are a 175°C junction operating stil)), 4si,it
temperature, fast switching speed and improved
repetitive avalanche rating . These features com-
bine to make this design an extremely efficient and
reliable device for use in Automotive applications
. . . . D-Pak l-Pak
and a wide variety of other applications. IRFR10102 IRFU101OZ
Absolute Maximum Ratings
Parameter Max. Units
ID © To = 25°C Continuous Drain Current, Vss © 10V (Silicon Limited) 91
ID © To = 100°C Continuous Drain Current, Vss @ 10V 65 A
ID © To = 25°C Continuous Drain Current, Vss @ 10V (Package Limited) 42
'DM Pulsed Drain Current co 360
Po OTC = 25°C Power Dissipation 140 W
Linear Derating Factor 0.9 W/°C
VGS Gate-to-Source Voltage t 20 V
EAS (Thermallylimiled) Single Pulse Avalanche Energy© 110 mJ
EAS (Tested ) Single Pulse Avalanche Energy Tested Value © 220
|AR Avalanche Current co See Fig.12a,12b,15,16 A
EAR Repetitive Avalanche Energy S mJ
TJ Operating Junction and -55 to + 175
TSTS Storage Temperature Range ''C
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
Mounting Torque, 6-32 or M3 screw 10 Ibf-in (1 .1N-m)
Thermal Resistance
Parameter Typ. Max. Units
ReJC Junction-to-Case - 1.11
RBJA Junction-to-Ambient (PCB mount) (D. - 40 °C/W
REMA Junction-to-Ambient - 110
HEXFET® is a registered trademark oflnternational Rectifier.
1
9/29/04
IRFR/U1010Z
International
TOR Rectifier
Electrical Characteristics @ To = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 55 -- -- V Vss = 0V, ID = 250pA
AV(3R)DSS/ATJ Breakdown Voltage Temp. Coefficient - 0.051 - V/°C Reference to 25°C, ID = 1mA
Fhosom Static Drain-to-Source On-Resistance - 5.8 7.5 mf2 Vss = 10V, ID = 42A ©
Vesnh) Gate Threshold Voltage 2.0 - 4.0 V Vos = Vss, ID = 100pA
gfs Forward Transconductance 31 - - S Vos = 25V, ID = 42A
loss Drain-to-Source Leakage Current - - 20 PA Vos = 55V, Vas = 0V
__- --- 250 Vos = 55V, Vss = 0V, TJ = 125°C
less Gate-to-Source Forward Leakage - - 200 nA l/ss = 20V
Gate-to-Source Reverse Leakage - - -200 Vas = -20V
a, Total Gate Charge - 63 95 ID = 42A
Qgs Gate-to-Source Charge - 17 - nC Vos = 44V
di Gate-to-Drain ("Miller") Charge - 23 - Vas = 10V s
tum) Turn-On Delay Time - 17 - VDD = 28V
t, Rise Time - 76 - ID = 42A
td(ott) Turn-Off Delay Time - 42 - ns Rs = 7.6 Q
t, Fall Time - 48 - Vss = 10V ©
u, Internal Drain Inductance - 4.5 - Between lead, - D
nH 6mm (0.25in.) /Cr, "
Ls Internal Source Inductance - 7.5 - from package 6&1 /
and center of die contact s
Ciss Input Capacitance - 2840 - Vas = 0V
Coss Output Capacitance - 470 - I/rs = 25V
Crss Reverse Transfer Capacitance - 250 - pF f = 1.0MHz
Coss Output Capacitance - 1630 - Vas = 0V, Vos = 1.0V, f = 1.0MHz
Coss Output Capacitance - 360 - Vss = 0V, VDS = 44V, f = 1.0MHz
Coss eff. Effective Output Capacitance - 560 - Vss = 0V, Vos = 0V to 44V ©
Source-Drain Ratings and Characteristics
Parameter Min Typ. Max. Units Conditions
ls Continuous Source Current - - 42 MOSFET symbol C D
(Body Diode) A showing the (L/K
ISM Pulsed Source Current - - 360 integral reverse G E
(Body Diode) C) p-n junction diode. e
VSD Diode Forward Voltage - - 1.3 V Tu = 25°C, ls = 42A, l/ss = 0V ©
trr Reverse Recovery Time - 24 36 ns TJ = 25°C, IF = 42A, VDD = 28V
a,, Reverse Recovery Charge - 20 30 nC di/dt = 1OOA/ps ©
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2
