IRFR024NTRPBF ,55V Single N-Channel HEXFET Power MOSFET in a D-Pak packageInternational
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. Ultra Low On-Resistance
Surface Mount (IRFR024N)
St ..
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Absolute Maximum Ratings
l-PAK
TO-251AA
TO-252AA
Parameter Max. Units 7
..
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IRFR024NTRPBF
55V Single N-Channel HEXFET Power MOSFET in a D-Pak package
PD - 95066A
IRFR024NPbF
IRFU024NPbF
International
Tart, Rectifier
0 Ultra Low On-Resistance HEXFET® Power MOSFET
0 Surface Mount (IRFR024N)
. Straight Lead (IRFU024N) D V - V
q Advanced Process Technology DSS - 55
. Fast Switching -
. Fully Avalanche Rated G Rrs(on, - O.075it
q Lead-Free
s ID = 17AS
Description
Fifth Generation HEXFETS from International Rectifier utilize advanced
processing techniques to achieve the lowest possible on-resistance per
silicon area. This benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power MOSFETs are well knownfor,
provides the designer with an extremely efficient device for use in a wide $gl' h _iiii,,i,sirs,ss,
t _ t ' F, 'e,
variety of applications. ' \\:\\§\\:\:\\\
The D-PAK is designed for surface mounting using vapor phase, infrared, or D-Pak i-Pak
wave soldering techniques The straight lead version (IRFU series) is for T0-252AA T0-251AA
through-hole mounting applications. Power dissipation levels up to 1 .5 watts
are possible in typical surface mount applications.
Absolute Maximum Ratings
Parameter Max. Units
ID C) To = 25''C Continuous Drain Current, I/ss (il 10V 17
ID C) TC =100°C Continuous Drain Current, I/ss Cl 10V 12 A
bs, Pulsed Drain Current Ci)(0 68
Po CIT: = 25°C Power Dissipation 45 W
Linear Derating Factor 0.30 wrc
Vos Gate-to-Source Voltage , 20 V
EAS Single Pulse Avalanche Energy0)3) 71 mJ
IAR Avalanche Current® 10 A
EAR Repetitive Avalanche En ergy0) 4.5 m,)
dv/dt Peak Diode Recovery dv/dt C06) 5.0 V/ns
T: Operating Junction and -55 to + 175
Tsms Storage Temperature Range ''C
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Thermal Resistance
Parameter Typ. Max. Units
Rsuc Junction-toCase - 32
RM CtastAtFAmbient (PCB mount)" - 50 TMI
RQJA Junction-to-Ambient - 110
** When mounted on 1" square PCB (FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994
1
12/14/04
IRFR/U024NPbF
International
TOR Rectifier
Electrical Characteristics (ii) TJ = 25''C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 55 - - V Ves = 0V, ID = 250pA
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coemcient - 0.052 - 1/f'C Reference to 25''C, ID = 1mA
Roam) Static Drain-to-Source On-Resistance - - 0.075 n Veg = lov, ID = 10A ©
Wsm Gate Threshold Voltage 2.0 - 4.0 V Ws = Vos, ID = 250pA
gts Forward Transconductance 4.5 - - S Ws = 25V, ID = 10A©
loss Drain-ttSource Leakage Current - - 25 PA Ws = 55V, Vos = 0V
- - 250 I/os = MV, Vos = OV, Tu = 150°C
loss Gate-to-Source Forward Leakage - - 100 nA Ws = 20V
Gate-to-Source Reverse Leakage - - -100 Vos = -20V
% Total Gate Charge - - 20 ID = 10A
ths Gate-to-Source Charge - - 5.3 nC Ws = 44V
di Gate-to-Drain ("Miller") Charge - - 7.6 Ws =10V,See Fig. 6 and 13 696)
tom) Turn-On Delay Time - 4.9 - VDD = 28V
tr Rise Time - 34 - ns ID =10A
tdiott) Turn-Off Delay Time - 19 - Rs = 249
t, Fall Time - 27 - RD = 2.6f2, See Fig. 10 co
LD Internal Drain Inductance - 4.5 - Between tal D
M 6mm (0.25in.) Q: >
Ls Internal Source Inductance - 7 5 - from package 0
. and center of die contacts s
Ciss Input Capacitance - 370 - Vss = 0V
Coss Output Capacitance - 140 - pF Ws = 25V
Crss Reverse Transfer Capacitance - 65 - f = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current MOSFET symbol D
(Body Diode) - - 17 s A showing the >
ISM Pulsed Source Current integral reverse G
(Body Diode) 0) - - 68 p-n junction diode. s
Vso Diode Forward Voltage - - 1.3 V TJ = 25''C, Is = 10A, Vos = 0V G)
trr Reverse Recovery Time - 56 83 ns T: = 25''C, IF = 10A
Qrr Reverse RecoveryCharge - 120 180 nC di/dt = 100A/ps C96)
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by L3+LD)
Notes:
co Repetitive rating: pulse width limited by
max. junction temperature. ( See fig. 11 )
© VDD= 25V, starting Tu-- 25''C, L =1.0mH
Rs = 259, Us =10A. (See Figure 12)
(s ISD E10A, di/dt S 280Alps, VDD I V(BR)DSS'
Tus: 175°C
BJ Pulse width s 300ps; duty cycle E 2%.
© This is applied for l-PAK, Ls of D-PAK is measured between
lead and center of die contact.
© Uses IRFZ24N data and test conditions.
