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IRFR024N-IRFR024NPBF-IRFR024NTR-IRFR024NTRL-IRFU024N-IRFU024NPBF
55V Single N-Channel HEXFET Power MOSFET in a D-Pak package
PD- 9.1336A
IRFR/U024N
International
ISER Rectifier
PRELIMINARY
HEXFET® Power MOSFET
o Ultra Low On-Resistance D
0 Surface Mount (IRFR024N) VDSS = 55V
0 Straight Lead (IRFU024N)
o Advanced Process Technology "iS RDS(on) = 00759
o Fast Switching G
o Fully Avalanche Rated ID = WAG)
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced
processing techniques to achieve the lowest possible on-resistance per
silicon area. This benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power MOSFETs are well known for,
provides the designer with an extremely efficient device for use in a wide
variety of applications.
D-Pak I-Pak
The D-PAK is designed for surface mounting using vapor phase, infrared, or
wave soldering techniques. The straight lead version (IRFU series) is for T0-252AA T0-251AA
through-hole mounting applications. Power dissipation levels up to 1.5 watts
are possible in typical surface mount applications.
Absolute Maximum Ratings
Parameter Max. Units
ID @ Tc = 25°C Continuous Drain Current, VGs @ 10V 17
ID © Tc = 100°C Continuous Drain Current, I/cs @ 10V 12 A
G, Pulsed Drain Current (OO) 68
PD @Tc = 25°C Power Dissipation 45 W
Linear Derating Factor 0.30 W/°C
I/ss Gate-to-Source Voltage i 20 V
EAs Single Pulse Avalanche Energy©© 71 mJ
IAR Avalanche Current0) 10 A
EAR Repetitive Avalanche Energy0) 4.5 mJ
dv/dt Peak Diode Recovery dv/dt ©© 5.0 V/ns
Tu Operating Junction and -55 to + 175
TSTG Storage Temperature Range "C
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Thermal Resistance
Parameter Typ. Max. Units
Rac Junction-to-Case - 3.3
ReJA Case-to-Ambient (PCB mount)" - 50 "C/W
ReJA Junction-to-Ambient - 1 10
** When mounted on 1" square PCB (FR-4 or G-10 Material ) .
For recommended footprint and soldering techniques refer to application note #AN-994
1
IRFR/U024N
International
TOR Rectifier
Electrical Characteristics @ Tu = 25''C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 55 - - V Ves = 0V, ID = 250pA
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coemcient - 0.052 - V/°C Reference to 25°C, ID = 1mA
RDs(on) Static Drain-to-Source On-Resistance - - 0.075 Q VGS = 10V, ID = 10A 6)
VGS(th) Gate Threshold Voltage 2.0 - 4.0 V Ihas = I/ss, lo = 250pA
gfs Forward Transconductance 4.5 - - S VDs = 25V, ID = 10A©
loss Drain-to-Source Leakage Current - - 25 pA VDS = 55V, VGS = 0V
- - 250 VDS = 44V, I/ss = 0V, Tu = 150°C
less Gate-to-Source Forward Leakage - - 100 n A VGS = 20V
Gate-to-Source Reverse Leakage - - -100 VGS = -20V
Qg Total Gate Charge - - 20 ID = 10A
095 Gate-to-Source Charge - - 5.3 nC VDs = 44V
di Gate-to-Drain ("Miller") Charge - - 7.6 VGs = 10V, See Fig. 6 and 13 ©6)
td(on) Turn-On Delay Time - 4.9 - VDD = 28V
tr Rise Time - 34 - ns ID = 10A
td(ott) Turn-Off Delay Time - 19 - RG = 249
tf Fall Time - 27 - RD = 2.69, See Fig. 10 (4)
u, Internal Drain Inductance - 4.5 - Between lsad, D
nH 6mm (0.25m.) JC )
LS Internal Source Inductance - 7 5 - from package G
. and center of die contacts s
Ciss Input Capacitance - 370 - VGS = 0V
Coss Output Capacitance - 140 - pF VDS = 25V
Crss Reverse Transfer Capacitance - 65 - f = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current MOSFET symbol D
(Body Diode) - - 17 © A showing the i:
ISM Pulsed Source Current - - 68 integral reverse G E
(Body Diode) CO p-n junction diode. s
VSD Diode Forward Voltage - - 1.3 V Tu = 25°C, Is = 10A, l/ss = 0V ©
trr Reverse Recovery Time - 56 83 ns Tu = 25°C, IF = 10A
er Reverse RecoveryCharge - 120 180 nC di/dt = 100A/ps @©
ton Forward Turn-On Time Intrinsic tum-on time is negligible (tum-on is dominated by LS+LD)
Notes:
OD Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11 )
© VDD = 25V, starting Tu = 25°C, L = 1.0mH
Rs = 259, IAS-- 10A. (See Figure 12)
© ISD S 10A, di/dt f 280A/ps, VDD f 1/(BR)ross,
TJs175°C
GD Pulse width f 300ps; duty cycle f 2%.
co This is applied for I-PAK, LS of D-PAK is measured between
lead and center of die contact.
© Uses IRFZ24N data and test conditions.
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