IRFR024 ,60V Single N-Channel HEXFET Power MOSFET in a D-Pak packageInternational
EOR
Rectifier
PD-9.702A
IRFR024
HEXFET® Power MOSFET
. Dynamic dv/d ..
IRFR024 ,60V Single N-Channel HEXFET Power MOSFET in a D-Pak packageapplications. Power dissipation levels up to 1.5 watts
are possible in typical surface mount
IRFR024N ,55V Single N-Channel HEXFET Power MOSFET in a D-Pak packagePD- 9.1336AIRFR/U024NPRELIMINARY®HEXFET Power MOSFETl Ultra Low On-ResistanceDl Surface Mount (IRFR ..
IRFR024NPBF ,55V Single N-Channel HEXFET Power MOSFET in a D-Pak packageapplications.Absolute Maximum RatingsParameter Max. UnitsI @ T = 25°C Continuous Drain Current, V @ ..
IRFR024NTR ,55V Single N-Channel HEXFET Power MOSFET in a D-Pak packageapplications.Absolute Maximum RatingsParameter Max. UnitsI @ T = 25°C Continuous Drain Current, V @ ..
IRFR024NTRL ,55V Single N-Channel HEXFET Power MOSFET in a D-Pak packageapplications. Power dissipation levels up to 1.5 wattsare possible in typical surface mount
ISL6740IB ,Flexible Double Ended Voltage and Current Mode PWM Controllersfeatures low operating • Inhibit Signalcurrent, adjustable switching frequency up to 1MHz, • Intern ..
ISL6740IV ,Flexible Double Ended Voltage and Current Mode PWM ControllersApplicationsISL6741IB -40 to 105 16 Ld SOIC M16.15• Telecom and Datacom PowerISL6741IV -40 to 105 1 ..
ISL6740IV-T , Flexible Double Ended Voltage and Current Mode PWM Controllers
ISL6740IVZ ,Flexible Double Ended Voltage and Current Mode PWM ControllersBlock DiagramISL6740V VSYNCDD REFFLVREF 1005.00 V1%OUTAQENABLE+T-QOUTBPWM TOGGLE+BG4.5 k-GNDSC S/D ..
ISL6741IB ,Flexible Double Ended Voltage and Current Mode PWM Controllersapplications using half-bridge, full bridge, and push-pull configurations. • Adjustable Short Circu ..
ISL6741IB ,Flexible Double Ended Voltage and Current Mode PWM ControllersFeaturesCurrent Mode PWM Controllers• Precision Duty Cycle and Deadtime ControlThe ISL6740, ISL6741 ..
IRFR024-IRFR024TRL
60V Single N-Channel HEXFET Power MOSFET in a D-Pak package
International
Rectifier
HEXFET® Power MOSFET
o Dynamic dv/dt
Fast Switching
Description
Third Generation HEXFETs from International Rectifier provide the designer
with the best combination of fast switching, ruggedized device design, low
Surface Mount (IRFRO24)
Straight Lead (|RFU024)
Available in Tape & Reel
Ease of Paralleling
Simple Drive Requirements
PD-9.702A
IRFR024
IFlFU024
Rating
D VDSS = 60V
rh, RDS(OH) = 0.109
s ID = 14A
on-resistance and cost-effectiveness.
The D-Pak is designed for surface mounting using vapor phase, infrared, or
wave soldering techniques. The straight lead version (IRFU series) is for
through-hole mounting applications. Power dissipation levels up to 1.5 watts
are possible in typical surface mount applications.
TO-252AA TO-251AA
Absolute Maximum Ratings
7 - Farameter Max. Units,
lo @ Tc = 25°C Continuous Drain Current, Veg © 10 V 14
ID © To = 100°C Continuous Drain Current, I/tss © 10 V 9.0 A
IDM Pulsed Drain Current 6) 56
Po © Ts = 25°C Power Tly_siellt 42 W
Po © TA ze_2A'f._fj'_t:rtLer,D_itjisipation (PCB Mount)" 2.5 _ 'i
_ Linear9_rating Factor 0.33 W PC
Linear Derating Factor (PCB Mount)" 0.020 - --
l/tss I Gate-to-Source Voltage - :20 - _ - _)s.l,
EAS Single Pulse Avalanche Energy © #91 - 7 7 g _mJ_
dv/dt Peak Diode Recovery dv/dt Cs) 5i - i 1l)rlt
Tu, TSTG Junction and Storage Temperature Range -55 to +150 0 C
Sole11rleye_rature, for 10 seconds 260 (1.6mm from case)
Thermal Resistance
Parameter_ ___ [Vin - - Typ -- __Maé __Units 1;
Redo Junction-to-Case - 3.0 l
Rm Junction-to-Ambient (PCB mount)" w --t 50 °C/W
ReJA Junction-tpr/ttee, - -- 110 c,
** When mounted on I" square PCB (FR-4 or G-IO Material).
For recommended footprint and soldering techniques refer to application note #AN-994.
lRFR024, IRFU024 EOR
Electrical Characteristics a TJ = 25°C (unless otherwise specified)
Parameter Min, Typ. Max. Units Test Conditions
V(BR)Dss Drain-to-Source Breakdown Voltage 60 - .....- V I/ss-HN, ID: 2500A
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coefficient - 0.073 -- V/OC Reference to 25°C, In: 1mA
Rusk...) Static Drain-to-Source On-Resistance - - 0.10 n VGs=10V, ID=8.4A ©
VGS(1h) Gate Threshold Voltage 2.0 - 4.0 V Vos=Vss, lo: 250pA
gfs Forward Transconductance 6.2 - - S Vos=25V, |D=8.4A ©
hose Drain-to-Source Leakage Current - - 25 HA I/os-MW, VGSzOV
- - 250 Vos=48V, VGs=0V, TJ=125°C
less Gate-to-Source Forward Leakage - - 100 n A VGs=20V
Gate-to-Source Reverse Leakage - - -100 VGs=-20V
09 Total Gate Charge ..._. - 25 ID=17A
Qgs Gate-to-Source Charge - - 5.8 nC Vos=48V
cu, Gate-to-Drain ("Miller") Charge - - 11 Vss---10V See Fig. 6 and 13 ©
td(on) Turn-On Delay Time - 13 - VDD=30V
t, 7 Rise Time - 58 --. ns Io: 17A
tum) Turn-Off Delay Time _ - 25 - RG=1 89
ti Fall Time - 42 - RD=1.7Q See Figure 10 GD
Ln Internal Drain Inductance - 4.5 - t $13,716 ste, ') D
nH from package cg
Ls Internal Source Inductance - 7.5 - Ind center of
die contact s
Ciss Input Capacitance - 640 - VGs=0V
Coss Output Capacitance - 360 - pF V05: 25V
Crss Reverse Transfer Capacitance - 79 - f=1.0MHz See Figure 5
Source-Drain Ratings and Characteristics
Parameter Min, Typ. Max. Units Test Conditions
ls; Continuous Source Current - - 14 MOSFET symbol D
(Body Diode) A showing the Ci)
ISM Pulsed Source Current - - 56 integral rgver§e G L
(Body Diode) co p-n junction diode. S
Vso Diode Forward Voltage - - 1.5 V TJ=25°C, ls=14A, l/ss-HN (g)
tn Reverse Recovery Time - 88 180 ns TJ=25°C, IF=17A
er Reverse Recovery Charge - 0.29 0.64 PC di/dt=100A/ps ©
ton Forward Turn-On Time Intrinsic turn-on time is neglegible (tum-on is dominated by Ls+LD)
Notes:
CD Repetitive rating; pulse width limited by (3) Isos17A,. di/de110A/ps, VDDSV(BR)Dss,
max. junction temperature (See Figure 11) TJS150°C
© VDD=25V, starting TJ=25°C, L=541pH (ii) Pulse width I 300 IIS; duty cycle C2%.
RG=25Q, lAs=14A (See Figure 12) .
