IRFPS43N50K ,500V Single N-Channel HEXFET Power MOSFET in a Super 247 (TO-274AA) packageApplicationsV R typ. IDSS DS(on) D Switch Mode Power Supply (SMPS)500V 0.078Ω 47A Uninterruptible ..
IRFR010 ,(IRFR012) HEXFET Transistorsapplications where limited heat
dissipation is required such as, computers and
peripherals, telec ..
IRFR010 ,(IRFR012) HEXFET TransistorsFEATURES:
Surface Mountable (Order As IRFR010)
Straight Lead Option (Order As IFtFU010)
Fast ..
IRFR010 ,(IRFR012) HEXFET TransistorsINTERNATIONAL RECTIFIER
HBSSHSE 0006250.?
ata Sheet No. PD-9.514A
T-35-25
1.].EDID
.
..
IRFR010 ,(IRFR012) HEXFET Transistorsapplications where PC
Board surface mounting is desirable. The surface mount
option IRFR010 is pr ..
IRFR014 ,60V Single N-Channel HEXFET Power MOSFET in a D-Pak packageapplications. D-PAK I-PAK
TO4?52AA TO-251AA
DATA
SHEETS
Absolute Maximum Ratings
Paramet ..
ISL6622ACBZ , VR11.1 Compatible Synchronous Rectified Buck MOSFET Drivers
ISL6622ACRZ , VR11.1 Compatible Synchronous Rectified Buck MOSFET Drivers
ISL6622CRZ , VR11.1 Compatible Synchronous Rectified Buck MOSFET Drivers
ISL6700IB ,80V/1.25A Peak/ Medium Frequency/ Low Cost/ Half-Bridge DriverFeaturesCost, Half-Bridge Driver• Drives 2 N-Channel MOSFETs in Half-Bridge The ISL6700 is an 80V/1 ..
ISL6700IB ,80V/1.25A Peak/ Medium Frequency/ Low Cost/ Half-Bridge DriverApplications• Telecom/Datacom Power Supplies• Half-Bridge Converters• Two-Switch Forward Converters ..
ISL6721A ,Flexible Single-ended Current Mode PWM ControllerApplications• 1% Tolerance Voltage Reference• Telecom and Datacom Power• Pb-Free (RoHS Compliant)• ..
IRFPS43N50K
500V Single N-Channel HEXFET Power MOSFET in a Super 247 (TO-274AA) package
PD- 93922B
t ti l
l:itiirg,1iiirii() SMPS MOSFET IRFPS43N50K
HEXFET© Power MOSFET
A Iications
pgwitch Mode Power Supply (SMPS) VDSS RDSion) typ. ID
Uninterruptible Power Supply 500V 0.0789 47A
High Speed Power Switching
Hard Switched and High Frequency
Circuits
Benefits rr' (A,
q Low Gate Charge 09 results in Simple 'rs-ii':')':)';,'.'. "",
Drive Requirement C'' ..,'" . .
o Improved Gate, Avalanche and Dynamic " .
dv/dt Ruggedness
q Fully Characterized Capacitance and Super-247T"
Avalanche Voltage and Current
q Low RDS(on)
Absolute Maximum Ratings
Parameter Max. Units
ID @ Tc = 25°C Continuous Drain Current, VGS @ 10V 47
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 29 A
IDM Pulsed Drain Current C) 190
Pro @Tc = 25°C Power Dissipation 540 W
Linear Derating Factor 4.3 W/°C
VGS Gate-to-Source Voltage 1 30 V
dv/dtPeak Diode Recovery dv/dt © 9.0 V/ns
T J Operating Junction and -55 to + 150
TSTG Storage Temperature Range
Soldering Temperature, for 10 seconds 300 "C
(1.6mm from case )
Avalanche Characteristics
Symbol Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy© - 910 mJ
IAR Avalanche Current0) - 47 A
EAR Repetitive Avalanche EnergyCD - 54 mJ
Thermal Resistance
Symbol Parameter Typ. Max. Units
Rac Junction-to-Case - 0.23
Recs Case-to-Sink, Flat, Greased Surface 0.24 - °C/W
ReJA Junction-to-Ambient - 4O
1
04/03/01
S43N50K
International
TOR Rectifier
Static @ T J = 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 500 - - V VGS = 0V, ID = 250pA
AV
RDS(on) Static Drain-to-Source On-Resistance - 0.078 0.090 f2 VGs = 10V, ID = 28A ©
VGS(th) Gate Threshold Voltage 3.0 - 5.0 V V93 = VGs, ID = 250PA
. - - 50 PA VDS = 500V, VGS = OV
Koss Drain-to-Source Leakage Current _ - 250 p A VDs = 400V, I/ss = 0V, To = 125°C
I Gate-to-Source Forward Leakage - - 100 n A Ves = 30V
GSS Gate-to-Source Reverse Leakage - - -100 VGs = -30V
Dynamic @ Tu = 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units Conditions
gts Forward Transconductance 23 - - S Vos = 50V, ID = 28A
% Total Gate Charge - - 350 ID = 47A
095 Gate-to-Source Charge - - 85 n0 Vos = 400V
di Gate-to-Drain ("Miller") Charge - - 180 VGS = 10V, See Fig. 6 and 13 ©
td(on) Turn-On Delay Time - 25 - VDD = 250V
tr Rise Time - 140 - ns ID = 47A
td(off) Turn-Off Delay Time - 55 - Rs = 1.09
tf Fall Time - 74 - Vss = 10V,See Fig. 10 ©
Ciss Input Capacitance - 8310 - VGS = 0V
Coss Output Capacitance - 960 - Vos = 25V
Crss Reverse Transfer Capacitance - 120 - pF f = 1.0MHz, See Fig. 5
Coss Output Capacitance - 10170 - VGS = 0V, Ws = 1.0V, f = 1.0MHz
COSS Output Capacitance - 240 - I/ss = 0V, I/rss = 400V, f = 1.0MHz
Coss eff. Effective Output Capacitance - 440 - l/ss = 0V, Vos = 0V to 400V s
Diode Characteristics
Symbol Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current - - 47 MOSFET symbol D
(Body Diode) A showing the
ISM Pulsed Source Current integral reverse G
(Body Diode) co - - 190 p-n junction diode. s
VSD Diode Forward Voltage - - 1.5 V To = 25°C, ls = 47A, VGS = 0V ©
trr Reverse Recovery Time - 620 940 ns TJ = 25°C, IF = 47A
Qrr Reverse RecoveryCharge - 14 21 pC di/dt = 100Alps ©
IRRM Reverse RecoveryCurrent - 38 - A
ton Forward Turn-On Time Intrinsic turn-on time is negligible (tum-on is dominated by L3+LD)
Notes:
co Repetitive rating; pulse width limited by G) Pulse width 3 400ps; duty cycle s: 2%.
max. junction temperature. (See Fig. 11)
© Starting T J = 25°C, L = 0.82mH, Rs = 259,
IAS = 47A (See Figure 12a).
© Isro S 47A,
di/dt S 230A/ps, VDD S V(BRpss,
TJ f 150°C.
s cus eff. is a fixed capacitance that gives the same charging time
as Coss while V05 is rising from 0 to 80% N/ross.
