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IRFPS3815
150V Single N-Channel HEXFET Power MOSFET in a Super 247 (TO-274AA) package
International
:raRIectifier
PD - 93911
IRFPS3815
HEXFET® Power MOSFET
o Advanced Process Technology D
o Ultra Lew fhtRfs.i.stance VDSS = 150V
. Dynamic dv/dt Rating
o 175°C 0 eratin Tem erature
.p . g p . Rroson) = 0.0150
. Fast Switching
o Fully Avalanche Rated
ID = 105A
Description
The HEXFET® Power MOSFETs from International
Rectifier utilize advanced processing techniques to
achieve extremely low on-resistance per silicon area.
This benefit, combined with the fast switching speed
and ruggedized device design that HEXFET power
MOSFETs are well known for, provides the designer
with an extremely efMient and reliable device for use in
a wide variety of applications.
super-247TM
Absolute Maximum Ratings
Parameter Max. Units
ID @ To = 25°C Continuous Drain Current, VGS @ 10V 105
ID © Tc = 100°C Continuous Drain Current, VGS @ 10V 74 A
IDM Pulsed Drain Current C) 390
Po @Tc = 25°C Power Dissipation 441 W
Linear Derating Factor 2.9 W/"C
I/ss Gate-to-Source Voltage * 30 V
EAs Single Pulse Avalanche Energy© 1610 mJ
IAR Avalanche Currentc0 58 A
EAR Repetitive Avalanche Energy0) 38 m1
dv/dt Peak Diode Recovery dv/dt © 3.0 V/ns
To Operating Junction and -55 to + 175
TSTG Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
Thermal Resistance
Parameter Typ. Max. Units
ReJC Junction-to-Case - 0.34
Recs Case-to-Sink, Flat, Greased Surface 0.24 - °C/W
RQJA Junction-to-Ambient - 40
1
3/14/01
IRFPS3815
International
TOR Rectifier
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 150 - - V VGS = 0V, lo = 250pA
AV
RDs(on) StaticDrain-to-Source On-Resistance - - 0.015 n VGS = 10V, ID = 63A ©
VGS(th) Gate Threshold Voltage 3.0 - 5.0 V VDs = 10V, ID = 250PA
9ts Forward Transconductance 47 - - S VDS = 50V, ID = 58A
loss Drain-to-Source Leakage Current - - 25 pA Vos = 100V, VGS = 0V
- - 250 Vos = 80V, VGS = 0V, TJ = 150°C
less Gate-to-Source Forward Leakage - - 100 n A VGs = 30V
Gate-to-Source Reverse Leakage - - -100 Vss = -30V
Qg Total Gate Charge - 260 390 ID = 58A
Qgs Gate-to-Source Charge - 53 80 nC Vos = 120V
di Gate-to-Drain ("Miller") Charge - 150 230 VGS = 10V©
tdmn) Turn-On Delay Time - 22 - VOD = 75V
tr Rise Time - 130 - ns ID = 58A
td(off) Turn-Off Delay Time - 51 - Rs = 1.039
tf Fall Time - 60 - VGS = 10V ©
LD Internal Drain Inductance - 5.0 - Between tad: D
nH 6mm (0.25in.) JC )
from package G
LS Internal Source Inductance - 13 - .
and center of die contact s
Ciss Input Capacitance - 6810 - VGs = 0V
Coss Output Capacitance - 1570 - pF VDS = 25V
Crss Reverse Transfer Capacitance - 480 - f = 1.0MHz, See Fig. 5
Coss Output Capacitance - 9820 - Was = 0V, Vos = 1.0V, f = 1.0MHz
Coss Output Capacitance .- 670 .- Was = 0V, Vos = 120V, f = 1.0MHz
Coss eff. Effective Output Capacitance S - 1270 - VGs = 0V, v.33 = 0V to 120V
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current - - 105 MOSFET symbol D
(Body Diode) A showing the
ISM Pulsed Source Current integral reverse G
(Body Diode) © - - 390 p-n junction diode. s
VSD Diode Forward Voltage - - 1.3 V To = 25°C, Is = 58A, VGS = 0V ©
tn Reverse Recovery Time - 270 410 ns TJ = 25°C, IF = 58A
Qrr Reverse RecoveryCharge - 2990 4490 nC di/dt = 100Alys ©
ton Forward Turn-On Time Intrinsic tum-on time is negligible (tum-on is dominated by LS+LD)
Notes:
OD Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11)
© Starting TJ = 25°C, L = 0.96mH
RG = 259, IAS = 58A. (See Figure 12)
© Iso S 58A, di/dt f 450A/ps, N/oo f V(BR)DSS,
TJs 175°C
co Pulse width 3 300ps; duty cycle 3 2%.
s Coss eff. is a fixed capacitance that gives the same charging time
as Coss while Vros is rising from 0 to 80% VDSS
