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IRFPS37N50A
500V Single N-Channel HEXFET Power MOSFET in a Super 247 (TO-274AA) package
International
Tait Rectifier
SMPS MOSFET
PD- 91822C
IRFPS37N50A
HEXFET© Power MOSFET
Applications
0 Switch Mode Power Supply (SMPS) Voss RDS(on) max Ir,
o Uninterruptable Power Supply 500V 0.139 36A
0 High Speed Power Switching
Benefits
o Low Gate Charge 09 results in Simple
Drive Requirement
o Improved Gate, Avalanche and Dynamic
dv/dt Ruggedness
o Fully Characterized Capacitance and
Avalanche Voltage and Current SUPER-247
0 Effective Coss Specified (See AN
Absolute Maximum Ratings
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 36
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 23 A
G, Pulsed Drain Current (O 144
Po @Tc = 25°C Power Dissipation 446 W
Linear Derating Factor 3.6 W/°C
VGS Gate-to-Source Voltage , 30 V
dv/dt Peak Diode Recovery dv/dt © 3.5 V/ns
T: Operating Junction and -55 to + 150
TSTG Storage Temperature Range "C
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Typical SMPS Topologies
0 Full Bridge Converters
o Power Factor Correction Boost
Notes C) through S are on page 8
12/14/99
IRFPS37N50A
International
TOR Rectifier
Static @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 500 - - V N/ss = 0V, ID = 250pA
RDS(on) Static Drain-to-Source On-Resistance - - 0.13 n VGS = 10V, ID = 22A ©
VGS(th) Gate Threshold Voltage 2.0 - 4.0 V VDS = VGs, ID = 250pA
loss Drain-to-Source Leakage Current - - 25 pA Vos = 500V, VGS = 0V
- - 250 Vos = 400V, VGS = ov, TJ = 150°C
I Gate-to-Source Forward Leakage - - 100 n A VGs = 30V
GSS Gate-to-Source Reverse Leakage - - -100 VGs = -30V
Dynamic @ Tu = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
9ts Forward Transconductance 20 - - S Vros = 50V, ID = 22A
% Total Gate Charge - - 180 ID = 36A
ths Gate-to-Source Charge - - 46 nC VDs = 400V
di Gate-to-Drain ("Miller") Charge - - 71 Vss = 10V, See Fig. 6 and 13 ©
tum) Turn-On Delay Time - 23 - VDD = 250V
tr Rise Time - 98 - ns ID = 36A
td(0ff) Turn-Off Delay Time - 52 - Rs = 2.159
t, Fall Time - 80 - RD = 7.09.8ee Fig. 10 ©
Ciss Input Capacitance - 5579 - VGs = 0V
Coss Output Capacitance - 810 - Vos = 25V
Crss Reverse Transfer Capacitance - 36 - pF f = 1.0MHz, See Fig. 5
Coss Output Capacitance - 7905 - Ves = 0V, Vos = 1.0V, f = 1.0MHz
CDSS Output Capacitance - 221 - Vss = 0V, VDs = 400V, f = 1.0MHz
CDSS eff. Effective Output Capacitance - 400 - Vss = 0V, Vos = 0V to 400V S
Avalanche Characteristics
Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy© - 1260 m]
IAR Avalanche Current0) - 36 A
EAR Repetitive Avalanche Energy00 - 44 mJ
Thermal Resistance
Parameter Typ. Max. Units
Rauc Junction-to-Case - 0.28
Recs Case-to-Sink, Flat, Greased Surface 0.24 - "C/W
ReJA Junction-to-Ambient - 40
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current - - 36 MOSFET symbol D
(Body Diode) A showing the
ISM Pulsed Source Current - - 144 integral reverse G
(Body Diode) co p-n junction diode. s
VSD Diode Forward Voltage - - 1.5 V To = 25°C, Is = 36A, VGS = 0V ©
trr Reverse Recovery Time - 570 860 ns To = 25''C, IF = 36A
Qrr Reverse RecoveryCharge - 8.6 13 pC di/dt = 100A/ps ©
ton Forward Turn-On Time Intrinsic tum-on time is negligible (tum-on is dominated by LS+LD)
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