IRFPG40 ,1000V Single N-Channel HEXFET Power MOSFET in a TO-247AC packageapplications
where higher power levels preclude the use of TO-220 devices. The TO-247
is similar ..
IRFPG40PBF ,1000V Single N-Channel HEXFET Power MOSFET in a TO-247AC packagePD-9.576B
1lRFPG40
Intettaatipt?al
1:212 Rectifier
HEXFET® Power MOSFET
. Dynamic dv/d ..
IRFPG50 ,1000V Single N-Channel HEXFET Power MOSFET in a TO-247AC packageDynamic dv/dt Rating
Repetitive Avalanche Rated
Isolated Central Mounting Hole
Fast Switching
..
IRFPG50PBF ,1000V Single N-Channel HEXFET Power MOSFET in a TO-247AC packageDynamic dv/dt Rating
Repetitive Avalanche Rated
Isolated Central Mounting Hole
Fast Switching
..
IRFPG50PBF ,1000V Single N-Channel HEXFET Power MOSFET in a TO-247AC packageDynamic dv/dt Rating
Repetitive Avalanche Rated
Isolated Central Mounting Hole
Fast Switching
..
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IRFPG40-IRFPG40PBF
1000V Single N-Channel HEXFET Power MOSFET in a TO-247AC package
International
1:212 Rectifier
9.576B
llRFPG40
HEXFET% Power MOSFET
0 Dynamic dv/dt Rating
0 Repetitive Avalanche Rated
" Isolated Central Mounting Hole
0 Fast Switching
0 Ease of Paralleling
0 Simple Drive Requirements
Description
Third Generation HEXFETs from international Rectifier provide the designer
with the best combination of fast switching, ruggedized device design, low
on-resistance and
The TO-247 package is preferred for commercial-industrial applications
where higher power levels preclude the use of TO-220 devices. The TO-247
is similar but superior to the earlier TO-218 package because of its isolated
mounting hole. It also provides greater creepage distance between pins to
VDSS_1OOOV
FIDSH0n =3.5§2
ID 4.3A
cost-effectiveness.
meet the requirements of most safety specifications.
Absolute Maximum Ratings
fargmeter - Max. Units
in @ Tc = 25°C Continuous Drain Current, Ves @ 10 V 4.3
ID @ Tc = 100°C Continuous Drain Current, VGS @ 10 V 2.7 A
[W Pulsed Drain Current (i) 17
Po © Tc = 25°C Power Dissipation 150 W
Linear Derating Factor ld WPC
Ves Gate-to-Source Voltage k20 V
EAS Single Pulse Avaia_ne_he Energy_@__ 490 mJ
IAR AvglzaiIggCgrLent C) 4.3 A
EAR Repetitive Avala_nste Energy C) - 15 md
dy/g: _ _ -- _ - -fltk, Diode Recovery dv/dt a 1.0 V/ns
T; - Operating Junction and -55 to +150
Tsrc Storage Temperature Range g _ Mk _k__g - _-___-_, __, g _7 00
- - - _______ S_ol_dering rrsrpi3eTtj.rr_i,jLi'1Llr1s'LFLnr1is' 300 (1 6mm from ease) - - aw -
T Mogntinglcwg f -il2_o_r_lyf_1styt.yt_, m __fpAoftip 11tlT0, - ....... J
Thermal Resistance
Parameter Min. Typ. Max. I Units
-RLJC - ______ Junction- to- Case _____ -____.____,,__.__''_C.__, - 0.83 1
R005 Case- to- JtaiGr,Tian, Flat, Greased Surface -.r-.- 0.24 - - °C/W
ReJA - [Junction- -to- Ambient - k~:__ii##g
IRFPG4O
Electrical Characteristics (ii) To = 25°C (unless otherwise specified)
Parameter Min. Typ. 1 Max. Units Test Conditions
V(Bnmss Drain-to-Source Breakdown Voltage 1000 - _ - v sz=0v, lo: 2500A
AV(BH)Dss/ATJ Breakdown Voltage Temp. Coefficient - 1.3 - V/°C Reference to 25°C, ID: 1mA
Rosmn) Static Drain-to-Source On-Resistance - - 3.5 Q VGs=1OV, 19:2.6A C4)
Vegan) Gate Threshold Voltage 2.0 - 4.0 V V03=VGs, kr-.. 250MA
gfs Forward Transconductance 33 -_. --rq- s Vos=50V, ID=2.6A co
loss Drain-to-Source Leakage Current - - 100 pA 1/Ds=1000V, l/ss-HN
, - - 500 VDs=800V, Vss=OV, TJ=12SOC
less Gate-to-Source Forward Leakage P-r-.. -_r_. 100 n A Vss---20V
Gate-to-Source Reverse Leakage ---_ w -100 Vss=-20V
Qg Total Gate Charge - - 120 ID=4.3A
Qgs Gate-to-Source Charge - - 16 nC Vros=400V .
Che Gate-to-Drain ("Miller") Charge - - 65 Ves=10V See Fig. 6 and 13 co
two”) Turn-On Delay Time - 15 - V00=500V
tr Rise Time - 33 - ns 1 lry=4.3A
tam") Turn-Off Delay Time - 100 - Re=9.1Q
1: Fall Time - 30 - RD=1ZOQ See Figure 10 ©
LD Internal Drain Inductance - 5.0 - , amine $201: ') D
nH from package 6Q: )
Ls Internal Source Inductance - 13 - Ind center Of
die contact s
Ciss Input Capacitance - 1600 - VGs=0V
Coss Output Capacitance - 170 - " Vos-- 25V
Crss Reverse Transfer Capacitance - 56 - f=1.0MHz See Figure 5
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Test Conditions
Is Continuous Source Current - - 4 3 MOSFET symbol D
(Body Diode) . A showing the (iii-li)
ISM Pulsed Source Current - - 17 integral reverse Gig
(Body Diode) C) p-n junction diode. s
VSD Diode Forward Voltage - - 1.8 V TJ=25°C, 15:4.3A, Ves=0V GD
trr Reverse Recovery Time - 470 710 ns TJ=25°C, IF=4.3A
ar, Reverse Recovery Charge - 1.9 2.9 PC di/dt=100A/ps @
ton Forward Turn-On Time Intrinsic turn-on time is neglegible (turn-on is dominated by Ls+LD)
Notes:
C) Repetitive rating; pulse width limited by
max. junction temperature (See Figure 11)
2 VDD=50V, starting TJ=2500, L=50mH
Re:25£2, |AS=4.3A (See Figure 12)
co ISD£4.3A, di/de100A/ps, VDDSBOO,
TJS150°C
(ii) Pulse width 3 300ps; duty cycle 52%.
