IRFPG30 ,1000V Single N-Channel HEXFET Power MOSFET in a TO-247AC packageIRFPG3O TOR
IRFPG40 ,1000V Single N-Channel HEXFET Power MOSFET in a TO-247AC packageapplications
where higher power levels preclude the use of TO-220 devices. The TO-247
is similar ..
IRFPG40PBF ,1000V Single N-Channel HEXFET Power MOSFET in a TO-247AC packagePD-9.576B
1lRFPG40
Intettaatipt?al
1:212 Rectifier
HEXFET® Power MOSFET
. Dynamic dv/d ..
IRFPG50 ,1000V Single N-Channel HEXFET Power MOSFET in a TO-247AC packageDynamic dv/dt Rating
Repetitive Avalanche Rated
Isolated Central Mounting Hole
Fast Switching
..
IRFPG50PBF ,1000V Single N-Channel HEXFET Power MOSFET in a TO-247AC packageDynamic dv/dt Rating
Repetitive Avalanche Rated
Isolated Central Mounting Hole
Fast Switching
..
IRFPG50PBF ,1000V Single N-Channel HEXFET Power MOSFET in a TO-247AC packageDynamic dv/dt Rating
Repetitive Avalanche Rated
Isolated Central Mounting Hole
Fast Switching
..
ISL6614CB-T ,Dual advanced synchronous rectified buck MOSFET driver with protection features.Applications With integrated to prevent both the upper and lower MOSFETs Power Sequencing Requireme ..
ISL6614CB-T ,Dual advanced synchronous rectified buck MOSFET driver with protection features.Block DiagramBOOT1PVCCVCCUGATE1OTP & PRE-POR OVP +5V
ISL6614CB-T ,Dual advanced synchronous rectified buck MOSFET driver with protection features.ISL6614®Data Sheet July 2004 FN9155.1Dual Advanced Synchronous Rectified
ISL6614CBZ ,Dual advanced synchronous rectified buck MOSFET driver with protection features.FeaturesPerformance and Extra Protection
ISL6614CBZ-T ,Dual advanced synchronous rectified buck MOSFET driver with protection features.Applications With integrated to prevent both the upper and lower MOSFETs Power Sequencing Requireme ..
ISL6614CBZ-T ,Dual advanced synchronous rectified buck MOSFET driver with protection features.FeaturesPerformance and Extra Protection
IRFPG30
1000V Single N-Channel HEXFET Power MOSFET in a TO-247AC package
,llpjllrip',',tatiiftal
142R, Rectifier
HEXFET® Power MOSFET
0 Dynamic dv/dt Hating
ct Repetitive Avalanche Rated
0 Isolated Central Mounting Hole
o Fast Switching
Ease of Parall
Simple Drive Requirements
Description
Third Generation HEXFETs from International Rectifier provide the designer
with the best combination of fast switching, ruggedized device design, low
PD-9.621 A
llRFPG30
on-resistance and cost-effectiveness.
The TO-247 package is preferred for commercial-industrial applications
where higher power levels preclude the use of TO-220 devices. The TO-247
is similar but superior to the earlier TO-218 package because of its isolated
mounting hole, It also provides greater creepage distance between pins to
meet the requirements of most safety specifications.
Absolute Maximum Ratings
TO-24 TAC
Parameter Max. Units
_lpfr_rp_u-.jf1sr'C_.,f..i1r_1ti_r1ySyeprain Current, Vas @ 10 V 3.1 -
ID @ Tc = 100°C Continuous Drain Current, Ves © 10 v 2.0 - - A
Irpe! _ Pulsed Drain Current (D 12 - ------_-
Po © Tc It:".' 25°C Power Dissipation 125 I W
Linear Derating Factor 1.0 WPC
Vss Gate-to-Source Voltage 4:20 V
EAS Single Pulse Avalanche Energy © 180 ml
IAR Avalanche Current co 3.1 - A
EAR Repetitive Avalanche Energy Ci) 13 md
dv/dt Peak Diode Recovery dv/dt co 1.0 V/ns
T1 Operating Junction and -55 to +150
TSTG Storage Temperature Range #._,_._ MI "C
Soldering Temperature, for 10 seconds 300 (1.6mm from case) !
Mounting Torque, 6-32 or M3 screw 10 Ibf.in (1.1 Nom)
Thermal Resistance
----_- hm“ Parameter Min. Typ. Max. "nj-at-s'-'"'
RBJC Junction-to-Case - - 1.0
Recs Casts-to-Sink, Flat, Greased Surface - 0.24 - °C/W
Ram Junction-to-Ambient - - 40 J
IFlFPG30
Electrical Characteristics iii) To = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Test Conditions
V(BFI)DSS Drain-to-Source Breakdown Voltage 1000 - - V VGs=0V, ID: 250pA
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coefficient ---. 1.4 - V/°C Reference to 25°C, ID: 1mA
Roam) Static Drain-to-Source On-Resistance - - 5.0 ft VGs=1OV, b=1.9A C4)
VGS(th) Gate Threshold Voltage 2.0 - 4.0 V VDs--Vss, ID: 250pA
gfs Forward Transconductance 2.4 - - S Vos=50V, Io=1.9A (ii)
loss Drain-to-Source Leakage Current - - 100 pA Vos=1000V, VGS=OV
- - 500 VDs=800V, Ves=0V, TJ=12500
less Gate-to-Source Forward Leakage - --- 100 n A Vas=20V
Gate-to-Source Reverse Leakage - - -100 Ves=-20V
ch Total Gate Charge - - 80 |o=3.1A
Qgs Gate-to-Source Charge - - 10 n0 VDS=4oov
di Gate-to-Drain ("Miller") Charge - - 42 Vss--10V See Fig. 6 and 13 (Ci)
td(on) Turn-On Delay Time - 12 - VDD=500V
tr Rise Time - 24 - ns ID=3.1A
tam) Turn-Off Delay Time - 89 - Re=129
t; Fall Time -.r_. 29 - RD=17OQ See Figure 10 (ii)
Lo Internal Drain Inductance - 5.0 - t $31,183 Jtf. ') /fV D
nH from package GAL: )
Ls Internal Source Inductance - 13 W and center df
die contact s
Ciss T Input Capacitance - 980 - VGs=OV
Coss 3; Output Capacitance - 140 - pF Vos=251/
Crss 3 Reverse Transfer Capacitance - 50 - f=1.0MHz See Figure 5
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Test Conditions
ls Continuous Source Current - - 3 1 MOSFET symbol D
(Body Diode) . A showing the +7:
ISM Pulsed Source Current - - 12 integral reverse G (tl-a,
(Body Diode) Ci) p-n junction diode. s
Vso I Diode Forward Voltage - -..... 1.8 V TJZZSOC, ls=3.1A, VGs=OV ©
trr i Reverse Recovery Time - 410 620 ns TJ=25°C, |F=3,1A
er f Reverse Recovery Charge - 1.3 2.0 wc di/dt=100A/ps co
ton I Forward Turn-On Time Intrinsic turn-on time is neglegible (turn-on is dominated by Lsr-Lo)
Notes:
C) Repetitive rating; pulse width limited by
max. junction temperature (See Figure 11)
© VDD=50V, starting TJ=25°C, L=35mH
Rty=25f2, IAS.=3AA (See Figure 12)
© ISDsSJA, di/de80A/ys, VDDSGOO,
TJS150°C
CO Pulse width f 300 ps; duty cycle 52%.
