IRFPF50PBF ,900V Single N-Channel HEXFET Power MOSFET in a TO-247AC packageInternational
TOR
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HEXFETO Power MOSFET
q Dynamic dv/dt
Rating
Repetitiv ..
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IRFPF50-IRFPF50PBF
900V Single N-Channel HEXFET Power MOSFET in a TO-247AC package
nternatiantg
Rectifier
PD-9.542B
IRFPFSO
HEXFET® Power MOSFET
q Dynamic dv/dt Rating
0 Repetitive Avalanche Rated
0 Isolated Central Mounting Hole
o FastSwitching
0 Ease of Paralleling
0 Simple Drive Requirements
Description
Third Generation HEXFETs from International Rectifier provide the designer
with the best combination of fast switching, ruggedized device design, low
VDSS = 900V
RDS(on) = 1.69
ID = 6.7A
on-resistance and cost-effectiveness.
The TO-247 package is preferred for commercial-industrial applications
where higher power leveis preclude the use of TO-220 devices. The TO-247
is similar but superior to the earlier TO-218 package because of its isolated
mounting hole. It also provides greater creepage distance between pins to
meet the requirements of most safety specifications.
TO-247AC
Absolute Maximum Ratings
Parameter Max. fl Units
Io © To = 25°C Continuous Drain Current, Vas @ 10 V 6.7
In © Tc = 100°C Continuous Drain Current, Vss © 10 V 4.2 A
IDM Pulsed Drain Current co 27 m
Po @ To = 25°C Power Dissipation 190 W
Linear Derating Factor 1.5 WPC
Ves Gate-to-Source Voltage i20 V
EAS Single Pulse Avalanche Energy © 880 ml
IAn Avalanche Current co 6.7_, A
EAR Repetitive Avalanche Energy Ci) 19 ml
dv/dt Peak Diode Recovery dv/dt © 1.5 V/ns
To Operating Junction and -55 to +150
TSTG Storage Temperature Range 00
Soldering Temperature, for 10 seconds 300 (1.6mm from case) -
Mounting Torque, 6-32 or M3 screw 10 lbNin (1.1 Nun) _
Thermal Resistance .
Parameter Min. Typ. Max. Lti.tt.
ch Junction-to-Case - - 0.65
Recs Case-to-Sink, Flat, Greased Surface _ 0.24 - °C/W
Ram Junction-to-Ambient - - t 40
IRFPFSO
Electrical Characteristics tii) TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Test Conditions
V(BR)Dss Drain-to-Source Breakdown Voltage 900 - - V VGS=OV, ID: 250WA
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coefficient - 1.2 - V/°C Reference to 25°C, In: 1mA
Roam) Static Drain-to-Source On-Resistance - - 1.6 Q VGs=1OV, |D=4.0A co
Vaum) Gate Threshold Voltage 2.0 - 4.0 V vDs=sz, ID: 250yA
gfs Forward Transconductance 4.9 - - S Vos=100V, lo=4.0A Co
loss Drain-to-Source Leakage Current - - 100 WA VDs=900V, Vos-MN
-_r. - 500 Vos=720V, Ves=0V, TJ=12500
less Gate-to-Source Forward Leakage - - 100 n A VGs=2OV
Gate-to-Source Reverse Leakage - - -100 VGs=-2OV
Qg Total Gate Charge - - 200 lo=6.7A
Qgs Gate-to-Source Charge - - 24 nC Vos=360V
di Gate-to-Drain ("Miller") Charge - 22 110 Vss=10V See Fig. 8 and 13 ©
tam Turn-On Delay Time - 20 - VDD=450V
t, Rise Time - 34 - ns |D=6.7A
leoff) Turn-Off Delay Time - 130 - Re=6.2§2
tf Fall Time -..- 37 --r-.. Ro=679 See Figure 10 (Cf)
Lo Internal Drain Inductance - 5.0 - ttit,11etJ.itilnd.') D
nH from package (LE )
Ls Internal Source Inductance - 13 - and center of
I die contact 5
Ciss Input Capacitance - 2900 ' __ Vss--0V
C055 Output Capacitance - 270 _ - PF Vns=25V
Crss Reverse Transfer Capacitance - 92 [ - f=1.0MHz See Figure 5
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Test Conditions
ls Continuous Source Current - W 6 7 MOSFET symbol D
(Body Diode) q A showing the L,-,-:
' Pulsed Source Current - - 27 integral reverse G :L
(Body Diode) (O p-n junction diode. s
Vso Diode Forward Voltage - - 1.8 V TJ=25°C, 13:8.7A, VGs=OV G)
trr Reverse Recovery Time - 610 920 ns To=25oC, |F=6.7A
Qrr Reverse Recovery Charge m 3.2 4.8 “C dildt=100A/ps @
ton Forward Turn-On Time Intrinsic turn-on time is neglegible (turn-on is dominated by L5+Lo)
Notes:
C) Repetitive rating; pulse width limited by
max. junction temperature (See Figure 11)
© VDD=50V, starting TJ=25°C, L=37mH
Re=259, |As=6.7A (See Figure 12)
C3) [3036.7A, di/dts130A/ps, VDDSGOO ,
TJS150°C
CI) Pulse width S 300 us; duty cycle 32%.
