IRFPF40PBF ,900V Single N-Channel HEXFET Power MOSFET in a TO-247AC packageapplications
where higher power levels preclude the use of TO-22O devices. The TO-247
is similar ..
IRFPF40PBF ,900V Single N-Channel HEXFET Power MOSFET in a TO-247AC packageInternational
1912 Rectifier
PD-9.580B
IFIFPF40
HEXFET® Power MOSFET
Dynamic dv/dt
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IRFPF40-IRFPF40PBF
900V Single N-Channel HEXFET Power MOSFET in a TO-247AC package
hqtennatiionall
Rectifier
HEXFET® Power MOSFET
Description
Third Generation HEXFETs from International Rectifier provide the designer
with the best combination of fast switching, ruggedized device design, low
Dynamic dv/dt Rating
Repetitive Avalanche Rated
Isolated Central Mounting Hole
Fast Switching
Ease of Paralleling
Simple Drive Requirements
PD-9.58OB
IFIFPF40
D Voss = 900V
RDS(on) = 2.59
s ID = 4.7A
on-resistance and cost-etfectiveness.
The TO-247 package is preferred for commercial-industrial applications
where higher power levels preclude the use of TO-22O devices. The TO-247
is similar but superior to the earlier TO-218 package because of its isolated
mounting hole. It also provides greater creepage distance between pins to
meet the requirements of most safety specifications.
Absolute Maximum Ratings
TO-247AC
Parameter Max. Units
ID @ Tc = 25°C Continuous Drain Current, I/ss @ 10 V 4.7
10 @ To = 100°C Continuous Drain Current, VGS © 10 V 2.9 A
IDM Pulsed Drain Current (f) 19
Po © To = 25°C Power Dissipation 150 W
Linear Derating Factor 1.2 WPC)
Vai; Gate-to-Source) Voltage $20 V
EAs Single Pulse Avalanche Energy © 500 mi
IAR Avalanche Current C) 4.7 A
EAR Repetitive Avalanche Energy (i) 15 md
dv/dt Peak Diode Recovery dv/dt co 1.5 V/ns
To Operating Junction and -55 to +150
TSTG Storage Temperature Flange °C
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
Mounting Torque, 6-32 or M3 screw 10 Ib1-in (1.1 N-m)
Thermal Resistance
Parameter Min. Typ. Max. Units
ReJC Junction-to-Case - f 0.83 I V
Recs Case-to-Sink, Flat, Greased Surface - 0.24 - °C/W
ReJA Junction-to-Ambient - - 4O
IRFPF40
Electrical Characteristics @ Tg = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Test Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 900 - - V Vss--0V, ID: 2500A
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coefficient - 1.0 w V/DC Reference to 25°C, 19: 1mA
RDS(On) Static Drain-to-Source On-Resistance - - 2.5 n VGs=10V, 19:2.8A © -
Vssim) Gate Threshold Voltage 2.0 - 4.0 V Vrrs--Vss, ID: 250PA
gfs Forward Transconductance 2.5 - - S VDs=50V, ID=2.BA ©
loss Drain-to-Source Leakage Current - - 100 pA Vrys=900V, Vss=OV
- - 500 Vos=720V, VGs=OV, TJ=125°C
less Gate-to-Source Forward Leakage - - 100 n A VGs=2OV
Gate-to-Source Reverse Leakage - - -100 Ves=-20V
q, Total Gate Charge - - 120 b--4.7A
Qgs Gate-to-Source Charge - - 16 nC Vos=360V
di Gate-to-Drain ("Miller") Charge - - 67 Vss=101/ See Fig. 6 and 13 ©
tdm Turn-On Delay Time - 15 - VDD=450V
t, Rise Time - 36 - ns lro=4.7A
fawn) Turn-Off Delay Time --. 110 - HG=9.1Q
" Fall Time - 32 - Ro=95Q See Figure 10 ©
Lo Internal Drain Inductance - 5.0 - 2% Ite. ') D
nH from package egg)
Ls Internal Source Inductance - 13 - Ind center df
die contact s
Ciss Input Capacitance - 1600 - VGs=0V
Cass Output Capacitance - 180 - pF Vos=25V
Crss Reverse Transfer Capacitance - 63 - f=1.0MHz See Figure 5
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Test Conditions -
ls Continuous Source Current - - 4 7 MOSFET symbol D
(Body Diode) . A showing the F75
ISM Pulsed Source Current - - 19 integral reverse G {:12
(Body Diode) (i) p-n junction diode. s
Vso Diode Forward Voltage - - 1.8 V TJ=25°C, Is=4.7A, Ves=0V ©
In Reverse Recovery Time - 510 770 . ns Tr--25oc, 1F=4.7A
er Reverse Recovery Charge --. 2.2 3.3 PC di/dt=100A/ps © T
ton Forward Turn-On Time Intrinsic turn-on time is neglegible (tum-on is dominated by Ls+LD)
Notes:
(D Repetitive rating; pulse width limited by
max. junction temperature (See Figure 11)
© VDD=50V, starting TJ=25°C, L=42mH
Ps=25n, |As=4.7A (See Figure 12)
Cg lsog4.7A, di/dt5;110A/pts, VDDSBOO,
TJS150°C
(g Pulse width s. 300 ps; duty cycle c2%.
