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IRFPE50-IRFPE50PBF
800V Single N-Channel HEXFET Power MOSFET in a TO-247AC package
International
Rectifier
PD-9.573B
IRFPESO
HEXFET® Power MOSFET
Description
Third Generation HEXFETs from International Rectifier provide the designer
with the best combination of fast switching, ruggedized device design, low
on-resistance and
The TO-247 package is preferred for commercial-industrial applications
where higher power levels preclude the use of TO-220 devices. The TO-247
is similar but superior to the earlier TO-218 package because of its isolated
mounting hole. It also provides greater creepage distance between pins to
Dynamic dv/dt Rating
Repetitive Avalanche Rated
Isolated Central Mounting Hole
Fast Switching
Ease of Paralleling
Simple Drive Requirements
Voss =800V
cost-effectiveness.
meet the requirements of most safety specifications.
Absolute Maximum Ratings
TO-247AC
Parameter Max Units
ID @ Tc = 25°C Continuous Drain Current, Ves @ 10 V 7.8
_19 © Tc = 100°C Continuoiorain Cu_rr_e_n1,_\(cLs @_1 l \_/_________ ----. ii - A
IDM Pulsed Drain Current co 31
Pro @ Tc = 25°C Power Dissipation 190 W
Linear Derating Factor 1.5 WPC
Vss Gate-to-Source Voltage 1 4:20 V
as - Single Pulse Aval_anche _Energy_, - 770 ml
IAR 'Avalanche Current Ci) 7.8 A
EAR Repetitive Avalanche Energy (i) _ _ - 19 mJ
Al -m- - a i Peak Diode Recovery du/dt © 2.0 V/ns
To Operating Junction and -55 to +150
Tsm Storage Temperature Range oC
1 ---'-- _6iqlerylgLremperature, for 10 seconds 300 (1.6mm from case)
- Mounting Torque, 6-32 or M3 screw 1 10 Ibf-in (1.1-N-m)
Thermal Resistance
- - - - _-- _ w “11“”! -" Parameter Min. Typ. 1 MEX. Units
5110 - - - i J_unction-ttrCase - - 0.65
Recs i Case-to-Sink, Flat, Greased Surface = 0.24 - °C/W
'R_isoc, - J_un_ct,ioi-tto,frploiy_nt, q...“ Wm.“ - - ._..:_ - - -rt, ~J£___,__
IRFPESO
Electrical Characteristics iii) TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Test Conditions
V(Bnpss Drain-to-Source Breakdown Voltage 800 - - V VGs=OV, lo: 250PA
AV(BH)Dss/ATJ Breakdown Voltage Temp, Coefficient - 0.98 - NPC; Reference to 25°C, In: 1mA
Rosmn) Static Drain-to-Source On-Resistance - - 1.2 Q VG3=10V, |D=4,7A ©
Vegan) Gate Threshold Voltage 2.0 - 4.0 V VDs=VGs, ID: 250PA
gts Forward Transconductance 5.6 - - S Vos=100V, b=4.7A ©
loss Drain-to-Source Leakage Current - - 100 PA Vos=800V, Vas=0V
- - 500 Vos=640V, Vss=OV, TJ=125°C
less Gate-to-Source Forward Leakage - - 100 n A Ves=20V
Gate-to-Source Reverse Leakage - - -100 VGs=-20V
q, Total Gate Charge - - 200 |D=7.8A
Qgs Gate-to-Source Charge - - 24 nC VDs=400V
di Gate-to-Drain ("Miller") Charge - --. 110 Vas---1OV See Fig. 6 and 13 (ii)
td(on) Turn-On Delay Time - 19 - VDD=400V
t, Rise Time - 38 - ns |D=7.8A
td(011) Turn-Off Delay Time - 120 - Rezegg
t, Fall Time - 39 - RD=52Q See Figure 10 G)
Lo Internal Drain Inductance - 5.0 -- [t,l11r/,liti'nd.') iii-j.-". D
nH from package G
_ Ls Internal Source Inductance - 13 - Ind center df J
_ die contact s
i,' Ciss Input Capacitance - 3100 - I/ss-HN
_ Cass Output Capacitance 1 - 800 - pF VDs=25V
Crss , Reverse Transfer Capacitance _ -r-r-. 490 - f=1.0MHz See Figure 5
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Test Conditions
ls Continuous Source Current - - 7 8 MOSFET symbol D
(Body Diode) . A showing the L,-i-:
ISM Pulsed Source Current - - 31 integral reverse G C"
(Body Diode) Ci) p-n junction diode. s
Vsn Diode Forward Voltage .-. - 1.8 V TJ=25°C, Is=7.8A, Vair=0V ©
trr Reverse Recovery Time - 650 980 ns TJ=25°C, IF=7.8A
Orr Reverse Recovery Charge - 3.8 5.7 wc dildt=100A/ps (4)
ton Forward Turn-On Time Intrinsic turn-on time is neglegible (turn-on is dominated by Ls+LD)
Notes:
CD Repetitive rating; pulse width limited by
max. junction temperature. (See Figure 11)
C2) VDD=50V. starting TJ:250C, L=23mH
Re=25£2, |AS=7.8A (See Figure 12)
TJS150°C
© |SDS7.8A, di/dtS140A/ps, VDDSBOO ,
Co) Pulse width f 300 ps; duty cycle CPL.
