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IRFP9140N
-100V Single P-Channel HEXFET Power MOSFET in a TO-247AC package
PD - 9.1492A
International
TOR Recti fi er PRELIMINARY IRF P9140 N
HEXFET® Power MOSFET
o Advanced Process Technology D
0 Dynamic dv/dt Rating VDSS = -100V
0 175°C Operating Temperature
0 P-Channel . v R = 0.1179
0 Fast Switching G DS(0n)
. Fully Avalanche Rated ID = -23A
Description S
Fifth Generation HEXFETs from International Rectiher
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power 'tza' l
MOSFETs are well known for, provides the designer Lt' w-it-tttiF)..).
with an extremely efficient and reliable device for use 't)gliiiti'
in a wide variety of applications.
The TO-247 package is preferred for commercial-
industrial applications where higher power levels
preclude the use of TO-220 devices. The TO-247 is
similar but superior to the earlier TO-218 package
because of its isolated mounting hole.
TO-247AC
Absolute Maximum Ratings
Parameter Max. Units
ID @ Tc = 25''C Continuous Drain Current, VGS @ -10V -23
ID @ TC = 100°C Continuous Drain Current, VGS @ -10V -16 A
IDM Pulsed Drain Current cos -76
Pro @Tc = 25°C Power Dissipation 140 W
Linear Derating Factor 0.91 W/°C
Ves Gate-to-Source Voltage 1 20 V
EAS Single Pulse Avalanche Energy©6) 430 mJ
IAR Avalanche Currentd) -11 A
EAR Repetitive Avalanche Energy© 14 mJ
dv/dt Peak Diode Recovery dv/dt ©S -5.0 V/ns
To Operating Junction and -55 to + 175
TSTG Storage Temperature Range cc
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting torque, 6-32 or M3 screw 10 lbf-in (1.1N-m)
Thermal Resistance
Parameter Typ. Max. Units
RGJC Junction-to-Case - 1 .1
Recs Case-to-Sink, Flat, Greased Surface 0.24 - °C/W
ROJA Junction-to-Ambient - 40
3/16/98
IRFP9140N
International
TOR 'uct/ie,
Electrical Characteristics ti) T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage -100 - - V Ves = 0V, ID = -250pA
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coemcient - -0.11 - V/°C Reference to 25°C, ID = -1mAS
RDS(on) Static Drain-to-Source On-Resistance - - 0.117 Q VGS = -10V, ID = -13A ©
Vegan) Gate Threshold Voltage -2.0 - -4.0 V Vros = VGs, ID = -250pA
gfs Forward Transconductance 5.3 - - S Vros = -5OV, ID = 11A©
loss Drain-to-Source Leakage Current - - -25 pA VDS = -100V, VGS = 0V
- - -250 VDs = -8OV, VGS = 0V, Tu = 150°C
less Gate-to-Source Forward Leakage - - 100 n A VGS = 20V
Gate-to-Source Reverse Leakage - - -100 VGS = -20V
% Total Gate Charge - - 97 ID = -11A
Q95 Gate-to-Source Charge - - 15 nC Vros = -80V
di Gate-to-Drain ("Miller") Charge - - 51 VGS = -10V, See Fig. 6 and 13 C96)
tam) Turn-On Delay Time - 15 - VDD = -50V
tr Rise Time - 67 - ns ID = -1 1A
td(off) Turn-Off Delay Time - 51 - Rs = 5.1 Q
tt Fall Time - 51 - RD = 4.29, See Fig. 10 COCs)
u, Internal Drain Inductance - 5.0 - Between tal x D
nH 6mm (0.25in.) {L )
from package G
Ls Internal Source Inductance - 13 - .
and center of die contact s
Ciss Input Capacitance - 1300 - VGs = 0V
Coss Output Capacitance - 400 - pF Vos = -25V
Crss Reverse Transfer Capacitance - 240 - f = 1.0MHz, See Fig. 5S
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max Units Conditions
Is Continuous Source Current _ _ -23 MOSFET symbol D
(Body Diode) A showing the
ISM Pulsed Source Current integral reverse G
(Body Diode) cos - - -76 p-n junction diode. S
VSD Diode Forward Voltage - - -1.3 V To = 25°C, Is = -13A, Ves = 0V ©
tn Reverse Recovery Time - 150 220 ns To = 25°C, IF = -11A
Qrr Reverse RecoveryCharge - 830 1200 pC di/dt = -100A/ps ©
ton Forward Tum-On Time Intrinsic turn-on time is negligible (tum-on is dominated by Ls+LD)
Notes:
C) Repetitive rating; pulse width limited by co Pulse width s 300ps; duty cycle s: 2%.
max. junction temperature. ( See fig. 11 )
© Starting To = 25°C, L = 7.1mH
Re: 259, IAS = -11A. (See Figure 12)
© ISD 3 -11A, di/dt s -470A/ps, VOD s V(BRpss,
T J 5 175°C
s Uses IRF9540N data and test conditions
