IRFP460 ,20A, 500V, 0.270 Ohm, N-Channel Power MOSFETABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0) 500 VDS GSV Drain ..
IRFP460C ,500V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect • 20A, 500V, R = 0.24Ω @V = 10 VDS(on) ..
IRFP460LCPBF ,500V Single N-Channel HEXFET Power MOSFET in a TO-247AC package
IRFP460LCPBF ,500V Single N-Channel HEXFET Power MOSFET in a TO-247AC package
IRFP460N ,500V Single N-Channel HEXFET Power MOSFET in a TO-247AC package
IRFP4710 ,100V Single N-Channel HEXFET Power MOSFET in a TO-247AC packagePD - 94361IRFP4710®HEXFET Power MOSFET
ISL6609IRZ , Synchronous Rectified MOSFET Driver
ISL6612ACB ,Advanced synchronous rectified buck MOSFET driver with pre-POR OVP.Applicationsoutput is shut down. This feature eliminates the Schottky diode that is used in some sy ..
ISL6612ACB-T ,Advanced synchronous rectified buck MOSFET driver with pre-POR OVP.FeaturesMOSFET Drivers with Pre-POR OVP• Pin-to-pin Compatible with HIP6601 SOIC familyThe ISL6612A ..
ISL6612ACBZ ,Advanced synchronous rectified buck MOSFET driver with pre-POR OVP.ISL6612A, ISL6613A®Data Sheet May 2004 FN9159Advanced Synchronous Rectified Buck
ISL6612ACBZA , Advanced Synchronous Rectified Buck MOSFET Drivers with Pre-POR OVP
ISL6612ACBZ-T ,Advanced synchronous rectified buck MOSFET driver with pre-POR OVP.Block DiagramISL6612A AND ISL6613AUVCCBOOTVCCUGATEOTP ANDPre-POR OVP +5VPHASE
IRFP460
20A, 500V, 0.270 Ohm, N-Channel Power MOSFET
1/8May 2001
IRFP460N-CHANNEL 500V - 0.22Ω - 18.4A TO-247
PowerMesh™II MOSFET TYPICAL RDS(on) = 0.22Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED
DESCRIPTIONThe PowerMESH™II is the evolution of the first
generation of MESH OVERLAY™. The layout re-
finements introduced greatly improve the Ron*area
figure of merit while keeping the device at the lead-
ing edge for what concerns swithing speed, gate
charge and ruggedness.
APPLICATIONS SWITH MODE LOW POWER SUPPLIES
(SMPS) HIGH CURRENT, HIGH SPEED SWITCHING DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVES
ABSOLUTE MAXIMUM RATINGS(•)Pulse width limited by safe operating area
(1)ISD ≤18.4A, di/dt ≤100A/μs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.
IRFP460
THERMAL DATA
AVALANCHE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)OFF (1)
DYNAMIC
3/8
IRFP460
ELECTRICAL CHARACTERISTICS (CONTINUED)SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note:1. Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %. Pulse width limited by safe operating area.
Thermal ImpedenceSafe Operating Area
IRFP460
Static Drain-source On Resistance
Output Characteristics
Transconductance
Gate Charge vs Gate-source Voltage Capacitance Variations
5/8
IRFP460
Normalized Gate Thereshold Voltage vs Temp.
Source-drain Diode Forward Characteristics
Normalized On Resistance vs Temperature
IRFP460
Fig. 5: Test Circuit For Inductive Load Switching
Fig. 4: Gate Charge test Circuit
Fig. 3: Switching Times Test Circuit For Resistive Load
