IRFP450 ,14A, 500V, 0.400 Ohm, N-Channel Power MOSFETELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)OFFSymbol Parameter Test Condi ..
IRFP450A ,N-CHANNEL POWER MOSFETFEATURESBV = 500 VDSS♦ Avalanche Rugged TechnologyR = 0.4ΩDS(on) ♦ Rugged Gate Oxide Tec ..
IRFP450APBF ,500V Single N-Channel HEXFET Power MOSFET in a TO-247AC package
IRFP450B ,500V N-Channel MOSFETIRFP450BNovember 2001IRFP450B500V N-Channel MOSFET
IRFP450N ,500V Single N-Channel HEXFET Power MOSFET in a TO-247AC package
IRFP460 ,20A, 500V, 0.270 Ohm, N-Channel Power MOSFETABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0) 500 VDS GSV Drain ..
ISL6605CR ,Synchronous Rectified MOSFET DriverFeatures• Drives Two N-Channel MOSFETsThe ISL6605 is a high frequency, MOSFET driver optimized to d ..
ISL6605CR ,Synchronous Rectified MOSFET Driverapplications. • Enable InputEach driver is capable of driving a 3000pF load with a 8ns propagation ..
ISL6605CR-T ,Synchronous Rectified MOSFET Driverfeatures a Three-State PWM input that, • Technical Brief TB363 “Guidelines for Handling and Process ..
ISL6605IB ,Synchronous Rectified MOSFET Driverfeatures 4A typical sink current for the lower • High Frequency Low Profile DC-DC Convertersgate dr ..
ISL6605IR ,Synchronous Rectified MOSFET Driverfeatures a Three-State PWM input that, • Technical Brief TB363 “Guidelines for Handling and Process ..
ISL6605IRZ , Synchronous Rectified MOSFET Driver
IRFP450
14A, 500V, 0.400 Ohm, N-Channel Power MOSFET
1/8May 2001
IRFP450N-CHANNEL 500V - 0.31Ω - 14A TO-247
PowerMesh™II MOSFET TYPICAL RDS(on) = 0.31Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED
DESCRIPTIONThe PowerMESH™II is the evolution of the first
generation of MESH OVERLAY™. The layout re-
finements introduced greatly improve the Ron*area
figure of merit while keeping the device at the lead-
ing edge for what concerns switching speed, gate
charge and ruggedness.
APPLICATIONS SWITCH MODE POWER SUPPLIES (SMPS) HIGH CURRENT, HIGH SPEED SWITCHING DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
ABSOLUTE MAXIMUM RATINGS(•)Pulse width limited by safe operating area
(1)ISD ≤14A, di/dt ≤100A/μs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.
IRFP450
THERMAL DATA
AVALANCHE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)OFF (1)
DYNAMIC
3/8
IRFP450
Safe Operating Area Thermal Impedance
ELECTRICAL CHARACTERISTICS (CONTINUED)SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note:1. Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %. Pulse width limited by safe operating area.
IRFP450
Capacitance VariationsGate Charge vs Gate-source Voltage
Transfer Characteristics
Static Drain-source On ResistanceTransconductance
Output Characteristics
5/8
IRFP450
Normalized On Resistance vs Temperature
Source-drain Diode Forward Characteristics
Normalized Gate Thereshold Voltage vs Temp.
Fig. 5: Test Circuit For Inductive Load Switching
Fig. 4: Gate Charge test Circuit
Fig. 3: Switching Times Test Circuit For Resistive Load
