IRFP4242PBF ,PDP MOSFETElectrical Characteristics @ T = 25°C (unless otherwise specified)JParameter Min. Typ. Max. Units C ..
IRFP4310Z ,100V Single N-Channel HEXFET Power MOSFET in a TO-247AC package
IRFP4321PBF ,150V Single N-Channel HEXFET Power MOSFET in a TO-247AC package
IRFP4368PBF ,75V Single N-Channel HEXFET Power MOSFET in a TO-247AC package
IRFP440 ,8.8A, 500V, 0.850 Ohm, N-Channel Power MOSFETInternational
EOR Rectifier
PD-9.457C
IFIFP440
HEXFET® Power MOSFET
Description
D ..
IRFP440B ,500V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect • 8.5A, 500V, R = 0.8Ω @V = 10 VDS(on) ..
ISL6596IRZ , Synchronous Rectified MOSFET Driver
ISL6605CB ,Synchronous Rectified MOSFET DriverISL6605®Data Sheet August 2003 FN9091.2Synchronous Rectified MOSFET Driver
ISL6605CB-T ,Synchronous Rectified MOSFET Driverapplications. • Enable InputEach driver is capable of driving a 3000pF load with a 8ns propagation ..
ISL6605CR ,Synchronous Rectified MOSFET DriverFeatures• Drives Two N-Channel MOSFETsThe ISL6605 is a high frequency, MOSFET driver optimized to d ..
ISL6605CR ,Synchronous Rectified MOSFET Driverapplications. • Enable InputEach driver is capable of driving a 3000pF load with a 8ns propagation ..
ISL6605CR-T ,Synchronous Rectified MOSFET Driverfeatures a Three-State PWM input that, • Technical Brief TB363 “Guidelines for Handling and Process ..
IRFP4242PBF
PDP MOSFET
International
TOR Rectifier
Features
. Advanced process technology
q Key parameters optimized for PDP Sustain &
Energy Recovery applications
q Low EPULSE rating to reduce the power
dissipation in Sustain & ER applications
. Low Qs for fast response
q High repetitive peak current capability for
reliable operation
. Short fall & rise times for fast switching
.175°C operating junction temperature for
improved ruggedness
. Repetitive avalanche capability for robustness
and reliability
Description
PDP MOSFET
PD - 96966A
llRFP4242PbF
Key Parameters
VDS min 300 V
l/os (Avalanche) typ. 360 V
RDS(ON) typ. @ 10V 49 m9
lm, max @ TC: 100°C 93 A
TJ max 175 °C
A F . . S
s To-247Ac
Gate Drain Source
This HEXFETQ Power MOSFET is specifically designed for Sustain; Energy Recovery & Pass switch
applications in Plasma Display Panels. This MOSFET utilizes the latest processing techniques to achieve
low on-resistance per silicon area and low EpULSE rating. Additional features of this MOSFET are 175°C
operating junction temperature and high repetitive peak current capability. These features combine to
make this MOSFET a highly efficient, robust and reliable device for PDP driving applications.
Absolute Maximum Ratings
Parameter Max. Units
I/ss Gate-to-Source Voltage t30 V
ID © To = 25°C Continuous Drain Current, Vas @ 10V 46 A
ID © To = 100°C Continuous Drain Current, Vas @ 10V 33
bs, Pulsed Drain Current co 190
lap © To = 100°C Repetitive Peak Current s 93
PD @Tc = 25°C Power Dissipation 430 W
PD @TC = 100°C Power Dissipation 210
Linear Derating Factor 2.9 W/°C
T, Operating Junction and -40 to + 175 ''C
TSTG Storage Temperature Range
Soldering Temperature for 10 seconds 300
Mounting Torque, 6-32 or M3 Screw 10ltrin (1 .1N-m) N
Thermal Resistance
Parameter Typ. Max. Units
fur, Junction-to-Case co - 0.35 °CNV
Notes (O through 6) are on page 8
7/25/05
|RFP4242PbF
Electrical Characteristics © To = 25°C (unless otherwise specified)
International
122R Rectifier
Parameter Min. Typ. Max. Units Conditions
BVDSS Drain-to-Source Breakdown Voltage 300 - - V Vss = 0V, ID = 250PA
ABI/oss/AT,, Breakdown Voltage Temp. Coefficient - 220 - mV/°C Reference to 25°C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance - 49 59 m9 Vss = 10V, ID = 33A ©
Vegan) Gate Threshold Voltage 3.0 - 5.0 V Vos = Vss, ID = 250HA
AVGS(m)/ATJ Gate Threshold Voltage Coefficient - -15 - mV/°C
loss Drain-to-Source Leakage Current - - 5.0 pA Vos = 240V, I/ss = 0V
- - 150 Vos = 240V, Vss = 0V, TJ = 125°C
less Gate-to-Source Forward Leakage - - 100 nA Ves = 20V
Gate-to-Source Reverse Leakage - - -100 I/ss = -20V
gfs Forward Transconductance 78 - - S Vos = 25V, b = 33A
q, Total Gate Charge - 165 247 no Va, = 150V, ID = 33A, Vas = 10V©
di Gate-to-Drain Charge - 61 -
tst Shoot Through Blocking Time 100 - - ns VDD = 240V, Vas = 15V, Re: 5.19
L = 220nH, C-- 0.4pF, l/ss = 15V
EPULSE Energy per Pulse - 1960 - pd Vos = 240V, Ra-- 4.79, To = 25°C
L = 220nH, C= 0.4pF, I/ss = 15V
- 3740 -
Vos = 240v, Ra-- 4.79, To = 100°C
cu, Input Capacitance - 7370 - Vss = 0V
Cass Output Capacitance - 520 - pF Vos = 25V
Crss Reverse Transfer Capacitance - 220 - f = 1.0MHz, See Fig.9
Cass eff. Effective Output Capacitance - 320 - Vss = 0V, I/rs = 0V to 240V
LD Internal Drain Inductance - 5.0 - Between lead, D
nH 6mm (0.25in.) [x I
Ls Internal Source Inductance - 13 - from package GAL¢ /
and center of die contact s
Avalanche Characteristics
Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy© - 700 md
EAR Repetitive Avalanche Energy co - 43 mJ
VDS(Avaianche) Repetitive Avalanche Voltage OD 360 - V
IAS Avalanche Current © - 33 A
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
ls © Tc = 25°C Continuous Source Current - - 46 MOSFET symbol D
(Body Diode) A showing the Lt
ISM Pulsed Source Current - - 190 integral reverse G Ir',
(Body Diode) co p-n junction diode. e
VSD Diode Forward Voltage - - 1.0 V Tu = 25°C. ls = 33A, Ves = 0V ©
trr Reverse Recovery Time - 300 450 ns Tu = 25°C. IF = 33A, Va, = 50V
Q,, Reverse Recovery Charge - 2330 3500 nC di/dt = 100A/ps ©
