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IRFP4232-IRFP4232PBF
250V Single N-Channel Plasma Display Panel HEXFET Power MOSFET in a TO-247AC package
International
asaRRectifier
Features
. Advanced process technology
q Key parameters optimized for PDP Sustain &
Energy Recovery applications
. Low EPULSE rating to reduce the power
dissipation in Sustain & ER applications
q Low Qs for fast response
. High repetitive peak current capability for
reliable operation
. Short fall & rise times for fast switching
.175°C operating junction temperature for
improved ruggedness
. Repetitive avalanche capability for robustness
and reliability
Description
PDP MOSFET
PD - 96965A
llRFP4232PbF
Key Parameters
VDs min 250 v
l/os (Avalanche) typ. 300 V
RDS(ON) typ. @ 10V 30 m9
EPULSE typ. 310 pJ
lm, max @ Tc-- 100°C 117 A
T J max 175 °C
D _-tiv,,
s TO-247AC
This HEXFET6 Power MOSFET is specifically designed for Sustain; Energy Recovery & Pass switch
applications in Plasma Display Panels. This MOSFET utilizes the latestprocessing techniques to achieve
low on-resistance per silicon area and low EPULSE rating. Additional features of this MOSFET are 175°C
operating junction temperature and high repetitive peak current capability. These features combine to
make this MOSFET a highly efficient, robust and reliable device for PDP driving applications.
Absolute Maximum Ratings
Parameter Max. Units
Vss Gate-to-Source Voltage :20 V
Vas (T RANSIENT) Gate-to-Source Voltage A30
lo © TC = 25°C Continuous Drain Current, Vss © 10V 60 A
lc, © TC = 100°C Continuous Drain Current, Vss © 10V 42
lo,, Pulsed Drain Current OD 240
lm, @ TC = 100°C Repetitive Peak Current s 117
PD @Tc = 25°C Power Dissipation 430 W
PD @Tc = 100°C Power Dissipation 210
Linear Derating Factor 2.9 W/°C
Tu Operating Junction and -40 to + 175 "C
TSTG Storage Temperature Range
Soldering Temperature for 10 seconds 300
Mounting Torque, 6-32 or M3 Screw 10lb-in (1 .1N-m) N
Thermal Resistance
Parameter Typ. Max. Units
Flax, Junction-to-Case GD - 0.35 °C/W
Notes (D through © are on page 8
1
09/14/07
lRFP4232PbF
International
TO.R Rectifier
Electrical Characteristics © To = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
BVDSS Drain-to-Source Breakdown Voltage 250 - - V Vss = 0V, ID = 250PA
ABVDSS/ATJ Breakdown Voltage Temp. Coefficient - 180 - mV/°C Reference to 25°C, l.) = 1mA
RDS(on) Static Drain-to-Source On-Resistance - 30 35.7 mg Ves = 10V, lo = 42A Cl)
VGS(th) Gate Threshold Voltage 3.0 - 5.0 V Vos = l/ss, Ir, = 250HA
AVGSUh/ATJ Gate Threshold Voltage Coefficient - -15 - mV/°C
loss Drain-to-Source Leakage Current - - 5.0 pA Vos = 200V, Vss = 0V
- - 150 Vos = 200V, Vas = 0V, Tu = 125°C
lass Gate-to-Source Forward Leakage - - 100 nA Vss = 20V
Gate-to-Source Reverse Leakage - - -1OO Vas = -20V
gts Forward Transconductance 95 - - S Vos = 25V, lo = 42A
q, Total Gate Charge - 160 240 nC Va, = 125V, ID = 42A, Vss = 10V©
di Gate-to-Drain Charge - 60 -
tum) Turn-On Delay Time - 37 _ Va, = 125V, Vss = 10V co
t, Rise Time - 100 - ns ID = 42A
town) Turn-Off Delay Time - 64 - Rs = 5.09
t, Fall Time - 63 - See Fig. 22
tst Shoot Through Blocking Time 100 - - ns VDD = 200V, Vas = 15V, Re: 4.79
L = 220nH, C= 0.4pF, Vss =15V
EPULSE Energy per Pulse - 310 - pd Vos = 200V, Re-- 4.79, TJ = 25°C
L = 220nH, C= 0.4uF, Vss =15V
- 950 - Vos = 200v, Re: 4.79, T, = 100°C
Ciss Input Capacitance - 7290 - Vss = 0V
Cass Output Capacitance - 610 - pF Vos = 25V
Crss Reverse Transfer Capacitance - 240 - f = 1.0MHz, See Fig.5
Coss eff Effective Output Capacitance - 420 - Vas = 0V, Vos = 0V to 200V
LD Internal Drain Inductance - 5.0 - Between lead, D
nH 6mm (0.25in.) /:%>
Ls Internal Source Inductance - 13 - from package ska
and center of die contact s
Avalanche Characteristics
Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy© - 220 md
EAR Repetitive Avalanche Energy C) - 43 mJ
VDSWalanche) Repetitive Avalanche Voltage (D 300 - V
|AS Avalanche Current © - 42 A
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
ls @ To = 25°C Continuous Source Current - - 60 MOSFET symbol D
(Body Diode) A showing the (r,
Iss, Pulsed Source Current - - 240 integral reverse G E
(Body Diode) C) p-n junction diode. q
VSD Diode Forward Voltage - - 1.0 V Tu = 25°C, ls = 42A, Vas = 0V Cl)
trr Reverse Recovery Time - 240 360 ns Tu = 25°C, IF = 42A, Va, = 50V
Q,, Reverse Recovery Charge - 1230 1850 nC di/dt = 100A/ps (3)
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