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IRFP4110PBF
100V Single N-Channel HEXFET Power MOSFET in a TO-247AC package
International
TOR Rectifier
Applications
. High Efficiency Synchronous Rectification in SMPS
PD - 97311
IRFP4110PbF
HEXFET® Power MOSFET
o Uninterruptible Power Supply Voss 100V
. High Spged Power Switching . . RDS(on) typ. 3.7m!)
. Hard Switched and High Frequency Circuits max. 4.5mQ
ID (Silicon Limited) 180A co
Benefits li, (Package Limited) 120A
. Improved Gate, Avalanche and Dynamic dv/dt
Ruggedness D
q Fully Characterized Capacitance and Avalanche D
SOA (:‘a
0 Enhanced body diode dV/dt and dl/dt Capability A ts. " ‘8
S TO-247AC
Gate Drain Source
Absolute Maximum Ratings
Symbol Parameter Max. Units
ID @ To = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) 1800 A
ID @ To = 100°C Continuous Drain Current, Vss @ 10V (Silicon Limited) 130©
ID @ To = 25°C Continuous Drain Current, Vss @ 10V (Wire Bond Limited) 120
IDM Pulsed Drain Current C) 670
Po @Tc = 25°C Maximum Power Dissipation 370 W
Linear Derating Factor 2.5 W/°C
Vss Gate-to-Source Voltage i 20 V
dv/dt Peak Diode Recovery G) 5.3 V/ns
T, Operating Junction and -55 to + 175 °C
TSTG Storage Temperature Range
Soldering Temperature, for 10 seconds 300
(1.6mm from case)
Mounting torque, 6-32 or M3 screw 10lb-in (1.1N-m)
Avalanche Characteristics
EAS(Thermallylimited) Single Pulse Avalanche Energy © 190 mJ
IAR Avalanche Current © 108 A
EAR Repetitive Avalanche Energy © 37 mJ
Thermal Resistance
Symbol Parameter Typ. Max. Units
Rauc Junction-to-Case © - 0.402
Recs Case-to-Sink, Flat Greased Surface 0.24 - °CNV
ReJA Junction-to-Ambient - 4O
1
03/03/08
|RFP411OPbF
International
TOR Rectifier
Static © T, = 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 100 - - V Vas = 0V, lo = 250pA
AV(BR)Dss/ATJ Breakdown Voltage Temp. Coefficient - 0.108 - VPC Reference to 25°C, ID = 5mA©
Ros(on) Static Drain-to-Source On-Resistance - 3.7 4.5 mg Vas = 10V, ID = 75A S
VGS(th) Gate Threshold Voltage 2.0 - 4.0 V Vros = Vss, ID = 250PA
loss Drain-to-Source Leakage Current - - 20 pA Vos = 100V, Vas = 0V
- - 250 Vros = 100v, Vss = OV, T, = 125°C
lass Gate-to-Source Forward Leakage - - 100 nA Vas = 20V
Gate-to-Source Reverse Leakage - - -100 Vss = -20V
Dynamic © Tu = 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units Conditions
gfs Forward Transconductance 160 - - S Vos = 50V, ID = 75A
q, Total Gate Charge - 150 210 nC ID = 75A
Qgs Gate-to-Source Charge - 35 - Vos = 50V
di Gate-to-Drain ("Miller") Charge - 43 - Vss = 10V S
Re Gate Resistance - 1.3 - n
tam) Turn-On Delay Time - 25 - ns Va, = 65V
t, Rise Time - 67 - ID = 75A
td(ott) Turn-Off Delay Time - 78 - Rs = 2.69
t, Fall Time - 88 - Vas = 10V ©
Ciss Input Capacitance - 9620 - pF Vss = 0V
Cos, Output Capacitance - 670 - Vos = 50V
Crss Reverse Transfer Capacitance - 250 - f = 1.0MHz
C055 eff. (ER) Effective Output Capacitance (Energy Related)© - 820 - Vss = 0V, Vos = 0V to 80V ©
Coss eff. (TR) Effective Output Capacitance (Time Related)© - 950 - I/ss = 0V, Vos = 0V to 80V ©
Diode Characteristics
Symbol Parameter Min Typ. Max. Units Conditions
ls Continuous Source Current - - 170CO A MOSFET symbol D
(Body Diode) showing the
ISM Pulsed Source Current - - 670 integral reverse G
(Body Diode) ©© p-n junction diode. S
VSD Diode Forward Voltage - - 1.3 V Tu = 25°C, Is = 75A, Vss = 0V G)
trr Reverse Recovery Time - 50 75 ns To = 25°C VR = 85V,
- 60 90 T., = 125°C IF = 75A
0,, Reverse Recovery Charge - 94 140 nC TJ = 25°C di/dt = 100A/ps ©
- 140 210 Tu-- 125°C
IRRM Reverse Recovery Current - 3.5 - A Tr, = 25°C
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
C) Calculated continuous current based on maximum allowable junction (ii) '30 f 75A, di/dt s 630A/ps, VDD S V(BR)DSS, Tu I 175°C.
temperature. Bond wire current limit is 120A. Note that current
limitations arising from heating of the device leads may occur with
co Pulse width f 400ps; duty cycle f 2%.
@ Coss eff. (TR) is a fixed capacitance that gives the same charging time
some lead mounting arrangements.
© Repetitive rating; pulse width limited by max. junction
temperature.
© Limited by TJmaX, starting To = 25°C, L = 0.033mH
Rs = 259, Us = 108A, VGS =1OV. Part not recommended for use
above this value.
as Coss while VDs is rising from O to 80% l/ross.
co Coss eff. (ER) is a fixed capacitance that gives the same energy as
Cos,S while Vos is rising from 0 to 80% Voss.
When mounted on 1" square PCB (FR-4 or G-10 Material). For recom
mended footprint and soldering techniques refer to application note #AN-994.
© Rs is measured at To approximately 90°C.
