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IRFP4004PBF
40V Single N-Channel HEXFET Power MOSFET in a TO-247AC package
International
TOR Rectifier
PD - 97323
IRFP4004PbF
Applications
It High Efficiency Synchronous Rectification in
SMPS HEXFET® Power MOSFET
o 1ni.nttrrupti.ble Power Supply D Voss 40V
0 High Speed Power Switching R t 1 35
0 Hard Switched and High Frequency Circuits DS(on) yp. . mo
max. 1.70mQ
G ID (Silicon Limited) 350AOD
Benefits s ID (Package Limited) 195A
0 Improved Gate, Avalanche and Dynamic
dv/dt Ruggedness
0 Fully Characterized Capacitance and D
Avalanche SOA ,3)
0 Enhanced body diode dV/dt and dI/dt \“ "
Capability ', \D3
TO-247AC
Gate Drain Source
Absolute Maximum Ratings
Symbol Parameter Max. Units
ID @ Tc = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) 3500D
ID @ Tc = 100°C Continuous Drain Current, Vss @ 10V (Silicon Limited) 2500 A
ID @ To = 25°C Continuous Drain Current, I/ss @ 10V (Wire Bond Limited) 195
G, Pulsed Drain Current C) 1390
PD @Tc = 25°C Maximum Power Dissipation 380 W
Linear Derating Factor 2.5 WPC
Vss Gate-to-Source Voltage i 20 V
dv/dt Peak Diode Recovery © 2.0 V/ns
TJ Operating Junction and -55 to + 175 °C
TSTG Storage Temperature Range
Soldering Temperature, for 10 seconds 300
(1.6mm from case)
Mounting torque, 6-32 or M3 screw 10Ib-in (1 .1N-m)
Avalanche Characteristics
EAS(ThermaWimitem Single Pulse Avalanche Energy © 290 ml
IAFl Avalanche Current © See Fig. 14, 15, 22a, 22b A
E AR Repetitive Avalanche Energy 6) mJ
Thermal Resistance
Symbol Parameter Typ. Max. Units
RBJC Junction-to-Case © - 0.40
Recs Case-to-Sink, Flat Greased Surface 0.24 - °C/W
RBJA Junction-to-Ambient ©© - 40
1
06/05/08
IRFP4004PbF
International
TOR Rectifier
Static @ T J = 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 40 - - V Vss = 0V, ID = 250pA
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coefficient - 0.035 - V/°C Reference to 25°C, ID = 5mA©
RDS(on) Static Drain-to-Source On-Resistance - 1.35 1.70 mo Ves = 10V, ID = 195A s
Vasith) Gate Threshold Voltage 2.0 - 4.0 V Vos = Vas, lo = 250pA
loss Drain-to-Source Leakage Current - - 20 pA VDS = 40V, Vss = 0V
- - 250 Vos = 40v, I/ss = OV, Tu = 125°C
less Gate-to-Source Forward Leakage - - 200 nA I/ss = 20V
Gate-to-Source Reverse Leakage - - -200 Vss = -20V
Dynamic © T J = 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units Conditions
gfs Forward Transconductance 290 - - S 1has = 10V, ID = 195A
Qg Total Gate Charge - 220 330 nC ID = 195A
Qgs Gate-to-Source Charge - 59 - VDS = 20V
di Gate-to-Drain ("Miller") Charge - 75 - I/ss = 10V co
stnc Total Gate Charge Sync. (Qg - di) - 145 - ID = 195A, Vos =0V, Vss = 10V
Ream) Internal Gate Resistance - 6.8 - Q
tam) Turn-On Delay Time - 59 - ns l/oo = 20V
t, Rise Time - 370 - ID = 195A
td(off) Turn-Off Delay Time - 160 - ' = 2.79
t, Fall Time - 190 - Vss = 10V ©
Ciss Input Capacitance - 8920 - pF Vas = 0V
cu, Output Capacitance - 2360 - Vos = 25V
Crss Reverse Transfer Capacitance - 930 - f = 1.0MH2
Coss eff. (ER) Effective Output Capacitance (Energy Related)@ - 2860 - Vss = 0V, VDS = 0V to 32V C)
Coss eff. (TR) Effective Output Capacitance (Time Related)© - 3110 - Vas = 0V, Vos = 0V to 32V ©
Diode Characteristics
Symbol Parameter Min Typ. Max. Units Conditions
ls Continuous Source Current - - 3500D A MOSFET symbol
(Body Diode) showing the
ISM Pulsed Source Current - - 1390 integral reverse G
(Body Diode) OOD p-n junction diode.
Vs, Diode Forward Voltage - - 1.3 V Tu = 25°C, Is = 195A, Vss = 0V S
trr Reverse Recovery Time - 83 130 ns Tu = 25°C VR = 20V,
- 78 120 TJ=125°C |F=195A
Q,, Reverse Recovery Charge - 190 290 nC Tu = 25°C di/dt = 100A/ps s
- 210 320 Tu = 125°C
IF,RM Reverse Recovery Current - 4.0 - A TJ = 25°C
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
C) Calculated continuous current based on maximum allowable junction (ii) '30 S 195A, di/dt S 690A/ps, VDD S V(BR)DSS: Tu S 175°C.
temperature. Bond wire current limit is 195A. Note that current co Pulse width f 400ps; duty cycle S 2%.
limitations arising from heating of the device leads may occur with @ Coss eff. (TR) is a fixed capacitance that gives the same charging time
some lead mounting arrangements. Refer to App Notes (AN-1140). as Coss while VDs is rising from O to 80% l/ross.
© Repetitive rating; pulse width limited by max. junction co Coss eff. (ER) is a fixed capacitance that gives the same energy as
temperature. Cos,S while Vos is rising from 0 to 80% Voss-
© Limited by TJmax, starting Tu = 25°C, L = 0.015mH When mounted on 1" square PCB (FR-4 or G-10 Material). For recom
Rs = 259, Us = 195A, VGS =1OV. Part not recommended for use mended footprint and soldering techniques refer to application note #AN-994.
above this value. © Rs is measured at To approximately 90°C.
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