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IRFP350-IRFP350PBF
400V Single N-Channel HEXFET Power MOSFET in a TO-247AC package
rttet1'yittiii.toti,i,tal
BOR Rectifier
PD-9.4450
IRFP350
HEXFET® Power MOSFET
tt Dynamic dv/dt Rating
tt Repetitive Avalanche Rated
0 isolated Central Mounting Hole
tt FastSwitching
0 Ease of Paralleling _
0 Simple Drive Requirements
Description
Third Generation HEXFETs from international Rectifier provide the designer
with the best combination of fast switching, ruggedized device design, low
VDSS = 400V
RDS(OH) = 0.309
ID=16A
on-resistance and cost-effectiveness.
The TO-247 package is preferred for commercial-industrial applications
where higher power levels preclude the use of TO-220 devices. The TO-247
is similar but superior to the earlier TO-218 package because of its isolated
mounting hole. It also provides greater creepage distance between pins to
meet the requirements of most safety specifications.
TO4y17AC
Absolute Maximum Ratings
Parameter Max. Units
ID @ Tc = 25°C Continuous Drain Current, Ves @ 10 V 16
ID @ Tc = 100°C Continuous Drain Current, Ves @ 10 V 10 A
IDM Pulsed Drain Current G) 64
Pa @ Tc = 25°C Power Dissipation 190 W
Linear Derating Factor 1.5 WPC
l/tss Gate-to-Source Voltage 4:20 V -
EAs Single Pulse Avalanche Energy © 390 md
IAR Avalanche Current Ci) 16 A
EAR Repetitive Avalanche Energy C) 19 mJ
dv/dt Peak Diode Recovery dv/dt © 4.0 V/ns
T: Operating Junction and -55 to +150
TSTG Storage Temperature Range °C
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
Mounting Torque, 6-32 or M3 screw 10 Ibbin (1.1 N-m) -
Thermal Resistance
Parameter Min. Typ. Max. Units
Rac Junction-to-Case - - 0.65
Recs Case-to-Sink, Flat, Greased Surface - 0.24 - °C/W
RBJA Junction-to-Ambient - - 40
IRFP350
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Test Conditions
V(Bnpss Drain-to-Source Breakdown Voltage 400 - - V I/ss-HN, lo: 250pA
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coefficient - 0.51 - V/°C Reference to 25°C, ID: 1mA
RDS(on) Static Drain-to-Source On-Resistance - - th30 n VGS=1OV, lro=9.6A ©
VGS(lh) Gate Threshold Voltage 2.0 - 4.0 V VDs=VGs, Io: 250uA
ggs Forward Transconductance 10 - - S VDs=50V, ID=9.6A ©
loss Drain-to-Source Leakage Current - - 25 uA Vrss=400V, VGSZOV
- - 250 Vos=320V, VGS=OV, TJ=125°C
less Gate-to-Source Forward Leakage - - 100 n A Ves=2OV
Gate-to-Source Reverse Leakage - - -100 Vss----20V
ck Total Gate Charge - - 150 |D=16A
Qgs Gate-to-Source Charge -.- - 23 l Vos=320V
cu, Gate-to-Drain ("Miller") Charge - - 80 VGs=1OV See Fig. 6 and 13 CI)
tam) Turn-On Delay Time - 16 - VDD=200V
tr Rise Time - 49 - ns |D=16A
tum) Tu rn-Off Delay Time - 87 - Re=6.2§2
t, Fall Time - 47 - RD=129 See Figure 10 GD
Lo Internal Drain Inductance - 5.0 - tihtiljt";n.lti'rf.; Ki)
nH from package (3Q:
Ls Internal Source Inductance - 13 - and center 6f
die contact s
Ciss Input Capacitance - 2600 - VGs=OV
Coss Output Capacitance - 660 - pF Vos= 25V
Crss Reverse Transfer Capacitance - 250 - f=1.0MHz See Figure 5
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Test Conditions
ls Continuous Source Current - - 16 MOSFET symbol D
(Body Diode) A showing the L,-,)
ISM Pulsed Source Current - - 64 integral reverse G g
(Body Diode) C) p-n junction diode. s
Vso Diode Forward Voltage - - 1.6 V TJ=25°C, 13:16A, Ves=OV C4)
tn Reverse Recovery Time - 380 570 ns TJ=25°C, IF=16A
Clrr Reverse Recovery Charge - 4.7 7.1 no dildt=100Alps ©
ton Forward Turn-On Time Intrinsic turn-on lime is neglegible (turn-on is dominated by Ls+LD)
Notes:
OD Repetitive rating; pulse width limited by
max. junction temperature (See Figure 11)
© Voo=50V, starting TJ=25°C, L=2.7mH
Rta=250, IAs=16A (See Figure 12)
© ISDS16A, di/dts200A/p1s, VDDSV(BR)Dss,
TJS150°C
Ci) Pulse width 3 300 us; duty cycle 52%.
