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IRFP344 from IR,International Rectifier

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IRFP344

Manufacturer: IR

450V Single N-Channel HEXFET Power MOSFET in a TO-247AC package

Partnumber Manufacturer Quantity Availability
IRFP344 IR 25 In Stock

Description and Introduction

450V Single N-Channel HEXFET Power MOSFET in a TO-247AC package The IRFP344 is a power MOSFET manufactured by International Rectifier (IR). Below are the factual specifications, descriptions, and features from Ic-phoenix technical data files:  

### **Manufacturer:**  
- **International Rectifier (IR)**  

### **Key Specifications:**  
- **Drain-Source Voltage (VDSS):** 250V  
- **Continuous Drain Current (ID):** 9.7A (at 25°C)  
- **Pulsed Drain Current (IDM):** 39A  
- **Power Dissipation (PD):** 150W (at 25°C)  
- **Gate-Source Voltage (VGS):** ±20V  
- **On-Resistance (RDS(on)):** 0.45Ω (max at VGS = 10V, ID = 5.3A)  
- **Input Capacitance (Ciss):** 1100pF (typical)  
- **Output Capacitance (Coss):** 350pF (typical)  
- **Reverse Transfer Capacitance (Crss):** 100pF (typical)  
- **Turn-On Delay Time (td(on)):** 15ns (typical)  
- **Turn-Off Delay Time (td(off)):** 44ns (typical)  
- **Operating Junction Temperature (TJ):** -55°C to +150°C  

### **Package:**  
- **TO-247AC (3-pin package)**  

### **Description:**  
The IRFP344 is an N-channel power MOSFET designed for high-speed switching applications. It is optimized for efficiency in power supplies, motor control, and other high-voltage switching circuits.  

### **Features:**  
- **High voltage capability (250V)**  
- **Low gate charge for fast switching**  
- **Low on-resistance for reduced conduction losses**  
- **Avalanche energy specified for ruggedness**  
- **Improved dv/dt capability**  

This information is based solely on the manufacturer's datasheet and technical documentation.

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