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IRFP344
450V Single N-Channel HEXFET Power MOSFET in a TO-247AC package
. PD-9.998
international
1:212 Rectifier lRFP344
HEXFET® Power MOSFET
0 Dynamic dv/dt Rating
0 Repetitive Avalanche Rated D -
0 Isolated Central Mounting Hole VDSS - 450V
0 Fast Switching
0 Ease of Paralleling G " RDS(on) = 0.639
0 Simple Drive Requirements
Description
Third Generation HEXFETs from International Rectifier provide the designer
with the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
The TO-247 package is preferred for commercial-industrial applications
where higher power levels preclude the use of TO-220 devices. The TO-247
is similar but superior to the earlier TO-218 package because of its isolated
mounting hole. It also provides greater creepage distance between pins to
meet the requirements of most safety specifications.
Absolute Maximum Ratings
TO-247AC
Parameter Max. Units
ID @ To = 25°C Continuous Drain Current, Vos @ 10 V 9.5
In © To = 100°C Continuous Drain Current, VGs @ 10 V 6.0 A
IDM Pulsed Drain Current (D 38
Po © To = 25°C Power Dissipation 150 W
Linear Derating Factor 1.2 WPC
Vos Gate-to-Source Voltage i20 V
EAS Single Pulse Avalanche Energy © 410 mJ
IAR Avalanche Current CO 9.5 A
EAR Repetitive Avalanche Energy co 15 mJ
dv/dt Peak Diode Recovery dv/dt © 3.5 V/ns
Tu Operating Junction and -55 to +150
TSTG Storage Temperature Range =
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
Mounting Torque, 6-32 or M3 screw 10 Ibbin (1.1 N.m)
Thermal Resistance
Parameter Min. Typ. Max. Units
Rex, Junction-to-Case - - 0.83
Recs Case-to-Sink, Flat, Greased Surface - 0.24 - °CNV
Ram Junction-to-Ambient - - 40
IRFP344
Electrical Characteristics tii) Tg = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Test Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 450 - - V Vos=OV, lo: 250pA
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coefficient - 0.59 - V/°C Reference to 25°C, Io: 1mA
RDS(on) Static Drain-to-Source On-Resistance - - 0.63 n Vss=10V, lto--5.7A ©
VGS(th) Gate Threshold Voltage 2.0 - 4.0 V VDs=VGs, Io: 250uA
Ws Forward Transconductance 5.0 - - . S VDs=50V, |o=5.7A ©
loss Drain-to-Source Leakage Current - - 25 WA Vos=450V, l/ss-HN
- - 250 VDs=360V. Ves=0V, TJ=125°C
less Gate-to-Source Forward Leakage - - 100 n A Ves=20V
Gate-to-Source Reverse Leakage - - -100 Ves=-2OV
ch Total Gate Charge - - 80 ltrr.8.8A
Qgs Gate-to-Source Charge - - 12 NC Vos=360V
di Gate-to-Drain ("Miller") Charge - - 41 Ves=10V See Fig. 6 and 13 ©
Won) Turn-On Delay Time - 8.7 - VDD=225V
tr Rise Time - 28 - ns ID=8.8A
Muff) Turn-Off Delay Time - 58 - Re=9.1§2
tf Fall Time - 27 - Ro=250 See Figure 10 ©
Lo Internal Drain Inductance - 5.0 - , $2,193 ste'. , D
nH from package (i)
Ls Internal Source Inductance - 13 - an center df
die contact s
Ciss Input Capacitance - 1400 - Vss=OV
Cogs Output Capacitance - 37o - pF Vos-- 25V
Crss Reverse Transfer Capacitance - 140 - f=1.0MHz See Figure 5
Source-Drain Ratings and Characteristics
Parameter Min, Typ. Max. Units Test Conditions
ls Continuous Source Current - - 9 5 MOSFET symbol D
(Body Diode) . A showing the bd:
ISM Pulsed Source Current - - 38 integral reverse G :3.
(Body Diode) OD p-n junction diode. s
I/so Diode Forward Voltage - - 2.0 V TJ=25°C, Is=9.5A, 1/ar=0V ©
trr Reverse Recovery Time - 490 740 _ ns TJ=25°C, IF=8.8A
er Reverse Recovery Charge - 3.2 4.8 PC di/dt=100A/ps ©
ton Forward Turn-On Time Intrinsic turn-on time is neglegible (turn-on is dominated by Ls+LD)
Notes:
co Repetitive rating; pulse width limited by
max. junction temperature (See Figure 11)
© Voo=sov, starting TJ=25°C, L=8.1mH
RG=25Q IAS--9.5A (See Figure 12)
© lar-SSA, di/dts90A/ps, VDDSV(BR)oss,
TJS150°C
© Pulse width 3 300 us; duty cycle 52%.
