IRFP3415 ,150V Single N-Channel HEXFET Power MOSFET in a TO-247AC packageapplications where higher power levelspreclude the use of TO-220 devices. The TO-247 issimilar but ..
IRFP344 ,450V Single N-Channel HEXFET Power MOSFET in a TO-247AC packageapplications
where higher power levels preclude the use of TO-220 devices. The TO-247
is similar ..
IRFP344PBF , HEXFET Power MOSFET
IRFP350 ,400V Single N-Channel HEXFET Power MOSFET in a TO-247AC packageapplications
where higher power levels preclude the use of TO-220 devices. The TO-247
is similar ..
IRFP350A ,N-CHANNEL POWER MOSFETFEATURESBV = 400 VDSS♦ Avalanche Rugged TechnologyR = 0.3ΩDS(on) ♦ Rugged Gate Oxide Tec ..
IRFP350LC ,400V Single N-Channel HEXFET Power MOSFET in a TO-247AC packageapplications wherehigher power levels preclude the use of TO-220 devices. The TO-247 is similarbut ..
ISL6568 ,Two-Phase Buck PWM Controller with Integrated MOSFET Drivers for VRM9, VRM10, and AMD Hammer Applicationsfeatures provide advanced protection for the microprocessor and power system.January 12, 2012 Hand ..
ISL6568 ,Two-Phase Buck PWM Controller with Integrated MOSFET Drivers for VRM9, VRM10, and AMD Hammer Applicationsfeatures of this controller IC include - Uses Loss-Less r Current SamplingDS(ON) programmable VID c ..
ISL6568CR , Two-Phase Buck PWM Controller with Integrated MOSFET Drivers for VRM9, VRM10, and AMD Hammer Applications
ISL6568CRZ-T , Two-Phase Buck PWM Controller with Integrated MOSFET Drivers for VRM9, VRM10, and AMD Hammer Applications
ISL6569ACB ,Multi-Phase PWM Controllerfeatures of this controller IC include • Digital Soft Start TMDynamic VID technology allowing seaml ..
ISL6569ACR ,Multi-Phase PWM ControllerApplicationsSuperior over-voltage protection is achieved by gating on the • AMD Hammer Family Proce ..
IRFP3415
150V Single N-Channel HEXFET Power MOSFET in a TO-247AC package
PD - 93962A
International IRFP3415
Tart, Rectifier
HEXFET6 Power MOSFET
0 Advanced ProcessTechnology D
a Dynamic dv/dt Rating Voss = 150V
0 175°C OperatingTemperature
o FastSwitching -
0 Fully Avalanche Rated G A RDS(on) - 0.042Q
Description s ID = 43A
Fifth Generation HEXFET® Power MOSFETs from
International Rectifier utilize advanced processing
techniquesto achieve extremely low on-resistance per
silicon area. This benefit, combined with the fast
switching speed and ruggedized device design that
HEXFET power MOSFETs are well known for, provides
the designer with an extremely efficient and reliable
device for use in a wide variety of applications.
The TO-247 package is preferred for commercial-
industrial applications where higher power levels
preclude the use of TO-220 devices. The TO-247 is
similar but superior to the earlier TO-218 package
because of its isolated mounting hole. TO-247AC
Absolute Maximum Ratings
Parameter Max. Units
ID @ To = 25°C Continuous Drain Current, Vss @ 10V 43
ID @ To = 100°C Continuous Drain Current, l/ss @ 10V 30 A
IDM Pulsed Drain Current G) 150
Pro @Tc = 25°C Power Dissipation 200 W
LinearDerating Factor 1.3 W/°C
Vss Gate-to-Source Voltage * 20 V
EAs Single Pulse Avalanche Energy© 590 mJ
IAR Avalanche Currents 22 A
EAR Repetitive Avalanche Energy© 20 mJ
dv/dt Peak Diode Recovery dv/dt © 5.0 V/ns
To OperatingJunction and -55 to + 175
TSTG Storage Temperature Range ''C
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
Mounting1orque, 6-32 or M3 srew 10 Ibf-in (1.1N-m)
Thermal Resistance
Parameter Typ. Max. Units
Ran; Junction-to-Case - 0.75
Recs Case-to-Sink, Flat, Greased Surface 0.24 - °C/W
RQJA Junction-to-Ambient - 4O
1
02/03/03
IRFP3415
International
TOR Rectifier
Electrical Characteristics Iii) To = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(ngss Drain-to-Source Breakdown Voltage 150 - - V Vss = 0V, ID = 250PA
AV(BR)Dss/ATJ Breakdown Voltage Temp. Coefficient - 0.17 - V/°C Reference to 25°C, ID = 1mA
Roswn) Static Drain-to-Source On-Resistance - - 0.042 n Vas = 10V, lo = 22A (D
VGS(th) Gate Threshold Voltage 2.0 - 4.0 V Vros = Vas, ID = 250pA
gfs Forward Transconductance 19 - - S Vos = 50V, k, = 22A
loss Drain-to-Source Leakage Current --- --- 25 pA Vos = 150V, Vss = 0V
-_- __- 250 Vros = 120V, Vcis = 0V, Tu = 150°C
less Gate-to-Source Forward Leakage - - 100 n A Vss = 20V
Gate-to-Source Reverse Leakage - - -100 Vas = -20V
th Total Gate Charge - - 200 ID = 22A
Q95 Gate-to-Source Charge - - 17 nC Vos = 120V
di Gate-to-Drain("Miller")Charge -- -.-.- 98 Vss = 10V, See Fig. 6 and 13 G)
Won) Turn-On DelayTime --- 12 __- Vroro = 75V
t, Rise Time --- 55 --- ns 1.3 = 22A
td(oti) Turn-Off Delay Time - 71 - Rs = 2.59
If Fall Time - 69 - RD = 3.39, See Fig. 10 (9
u, Internal Drain Inductance - 4.5 - Between tad: D
nH 6mm(0.25in.) Q: )
from package G
Ls Internal Source Inductance - 7.5 - .
and center of die contact s
Ciss InputCapacitance - 2400 - Vss = 0V
Coss OulputCapacitance - 640 - pF Vos = 25V
Crss ReverseTransferCapacitance - 340 - f = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current _ _ 43 MOSFET symbol D
(Body Diode) A showing the
ISM Pulsed Source Current - - 150 integral reverse G
(Body Diode) CD p-n junction diode. s
Vso Diode ForwardVoltage - - 1.3 V TJ = 25°C, ls = 22A, Vss = 0V (0
trr Reverse RecoveryTime - 260 390 ns TU = 25°C, IF = 22A
Q, Reverse RecoveryCharge - 2.2 3.3 pC di/dt = 100A/ps (9
Notes:
C) Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
© VDD = 25V, starting Tu = 25°C, L = 2.4mH
Rs = 259, IAS = 22A. (See Figure 12)
© ISD f 22A, di/dt S 820A/ps, VDD S V(BR)DSS,
Tu S 175°C
© Pulse width s 300ps; duty cycle 5 2%.
