IRFP260 ,200V Single N-Channel HEXFET Power MOSFET in a TO-247AC packageapplications
where higher power levels preclude the use of TO-22O devices. The TO-247
is simila ..
IRFP260M ,200V Single N-Channel HEXFET Power MOSFET in a TO-247AC Series M packagePD - 96293IRFP260MPbF®HEXFET Power MOSFET Advanced Process TechnologyD Dynamic dv/dt RatingV = 20 ..
IRFP260MPBF ,200V Single N-Channel HEXFET Power MOSFET in a TO-247AC Series M packageapplications wherehigher power levels preclude the use of TO-220 devices. The TO-247 is similarbut ..
IRFP260N ,200V Single N-Channel HEXFET Power MOSFET in a TO-247AC packagePD - 94004BIRFP260N®HEXFET Power MOSFET Advanced Process TechnologyDV = 200V Dynamic dv/dt Rating ..
IRFP260NPBF ,200V Single N-Channel HEXFET Power MOSFET in a TO-247AC packageapplications.The TO-247 package is preferred for commercial-industrial
IRFP264 ,250V Single N-Channel HEXFET Power MOSFET in a TO-247AC packagePD-9.756
IRFP264
Intemational
TOR Rectifier
HEXFET6 Power MOSFET
q Dynamic dv/dt Ratin ..
ISL6565ACV ,Multi-Phase PWM Controller with Precision rDS(ON) or DCR Current Sensing for VR10.X ApplicationISL6565A, ISL6565B®PRELIMINARY Data Sheet December 2003 FN9135Multi-Phase PWM Controller with
ISL6565BCBZ , Multi-Phase PWM Controller with Precision rDS(ON) or DCR Current Sensing for VR10.X Application
ISL6565BCR ,Multi-Phase PWM Controller with Precision rDS(ON) or DCR Current Sensing for VR10.X ApplicationISL6565A, ISL6565B®PRELIMINARY Data Sheet December 2003 FN9135Multi-Phase PWM Controller with
ISL6565BCV ,Multi-Phase PWM Controller with Precision rDS(ON) or DCR Current Sensing for VR10.X ApplicationFeaturesPrecision r or DCR Current Sensing DS(ON)• Multi-Phase Power Conversionfor VR10.X Applicati ..
ISL6566ACRZ , Three-Phase Buck PWM Controller with Two Integrated MOSFET Drivers and One External Driver Signal
ISL6566CR-T , Three-Phase Buck PWM Controller with Integrated MOSFET Drivers for VRM9, VRM10, and AMD Hammer Applications
IRFP260
200V Single N-Channel HEXFET Power MOSFET in a TO-247AC package
ntet'tailittt,tall
EOR Rectifier
PD-9.755
1FlFP260
HEXFET® Power MOSFET
Description
Third Generation HEXFETs from International Rectifier provide the designer
with the best combination of fast switching, ruggedized device design, low
Dynamic dv/dt Rating
Repetitive Avalanche Rated
Isolated Central Mounting Hole
Fast Switching
Ease of Paralleling
Simple Drive Requirements
VDSS = 200V
RDS(on) = (ih055Q
b = 46A
on-resistance and cost- .- ctiveness.
The TO-247 package
meet the requirements of most safety specifications.
, preferred for commercial-industrial applications
where higher power levels preclude the use of TO-22O devices. The TO-247
is similar but superior to the earlier TO-218 package because of its isolated
mounting hole. It also provides greater creepage distance between pins to
TO-247AC
Absolute Maximum Ratings
Parameter Max. Units
ID © Tc = 25°C Continuous Drain Current, Ves @ 10 V 46
In @ Tc = 100°C Continuous Drain Current, Vss @ 10 V 29 A
[DM Pulsed Drain Current co 180
Po © To = 25°C Power Dissipation 280 W
Linear Derating Factor 2.2 WPC
VGs Gate-to-Source Voltage :20 V
EAS Single Pulse Avalanche Energy 2 1000 mJ
IAR Avalanche Current co 46 A
EAR Repetitive Avalanche Energy co 28 mJ
dv/dt Peak Diode Recovery dv/dt © 5.0 V/ns
Tu Operating Junction and -55 to +150
Tsm Storage Temperature Range "C
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
Mounting Torque, 6-32 or M3 screw 10 lbfoin (1.1 N-m) 1
Thermal Resistance
I Parameter Min. Typ. Max. V Units
Redo Junction-to-Case - 0,45
Recs Case-to-Sink, Flat, Greased Surface 0.24 - °C/W
Raja Junction-to-Ambient - 40 t _d
IRFP260
Electrical Characteristics tii! Tg = 25°C (unless otherwise specified)
Parameter Min. Typ. Max, Units Test Conditions
V(sn)oss Drain-to-Source Breakdown Voltage 200 - - V Vss=0V, ID: 2500A
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coefficient - 0.24 - VPC Reference to 25°C, In: 1mA
Roam) Static Drain-to-Source On-Resistance - - 0.055 n Vss=10V, ID=28A ©
Vegan) Gate Threshold Voltage 2.0 - 4.0 V VDs=VGs, ID: 250PA
grs Forward Transconductance 24 - - S Vos=50V, |D=28A ©
loss Drain-to-Source Leakage Current - - 25 pA Vtys--.200V, VGS=OV
- - 250 Vos=160V, Vss=OV, TJ=125°C
less Gate-to-Source Forward Leakage - - 100 n A VGs=2OV
Gate-to-Source Reverse Leakage - - -100 VGs=-20V
q, Total Gate Charge - - F 230 ID=46A
Qgs Gate-to-Source Charge - - 42 nC VDs=160V
di Gate-to-Drain ("Miller") Charge - - 110 Ves=10V See Fig. 6 and 13 q)
td(on) Turn-On Delay Time - 23 - VDD=100V
tr Rise Time - 120 - ns lo=46A
tam) Turn-Off Delay Time - 100 - Re=4.39
t, Fall Time e.Pee 94 - RD=2.1Q See Figure 10 ©
Lo Internal Drain Inductance - 5,0 - t2(,et)".jg/,f.') D
nH from package GE )
Ls Internal Source Inductance - 13 - Ind center 6f
die contact s
Ciss Input Capacitance - 5200 - Vss=OV
Coss Output Capacitance - 1200 - pF Vos-- 25V
Cess Reverse Transfer Capacitance - 310 - f=1.0MHz See Figure 5
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Test Conditions
Is Continuous Source Current - - 46 MOSFET symbol D
(Body Diode) A showing the L,-,':
ISM Pulsed Source Current - - 180 integral rgverge G :3.
(Body Diode) (O p-n junction diode. S
Van Diode Forward Voltage - - 1.8 V TJ=25°C, Is=46A, Vas=OV ©
trr Reverse Recovery Time - 390 590 ns TJ=25°C, IF=46A
er Reverse Recovery Charge - 4.8 7.2 “C di/dt=100A/ps ©
ton Forward Turn-On Time Intrinsic turn-on time is neglegible (turn-on is dominated by Ls+Lo)
Notes:
C) Repetitive rating; pulse width limited by
max. junction temperature (See Figure 11)
© VDD=50V, starting TJ=25°C, L=708pH
RG=2SQ, lAs=46A (See Figure 12)
© lsns46A, di/dtg30A/p1s, VDDSV(BR)Dss.
TJS150°C
C4 Pulse width s: 300 Its; duly cycle 32%.
