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EOR Rectifier
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IRFP254N-IRFP254NPBF
250V Single N-Channel HEXFET Power MOSFET in a TO-247AC package
International
Tait Rectifier
Description
Fifth Generation HEXFETs from International Rectinerutilize advanced processing
techniques to achieve extremely lowon-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized device design that
HEXFET Power MOSFETs are well known for, provides the designer with an
extremely eelcient and reliable device for use in a wide variety of applications.
The TO-247 package is preferred for commercial-industrial applications where
higher power levels preclude the use of TO-220 devices. The TO-247 is similar
but superiorto the earlierTO-218 package because of its isolated mounting hole.
Advanced Process Technology
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Ease of Paralleling
Simple Drive Requirements
PD - 94213
RFP254N
HEXFET® Power MOSFET
VDSS = 250V
A RDS(on) = 125mf2
ID = 23A
T0-247AC
Absolute Maximum Ratings
Parameter Max. Units
ID @ Tc = 25°C Continuous Drain Current, VGS @ 10V 23
ID @ Tc = 100°C Continuous Drain Current, l/ss @ 10V 16 A
IDM Pulsed Drain Current C) 92
Po @Tc = 25°C Power Dissipation 220 W
Linear Derating Factor 1.5 W/°C
VGS Gate-to-Source Voltage , 20 V
EAS Single Pulse Avalanche Energy© 300 mJ
IAR Avalanche Current© 14 A
EAR Repetitive Avalanche Energyc0 22 mJ
dv/dt Peak Diode Recovery dv/dt © 7.4 V/ns
Tu Operating Junction and -55 to + 175
TSTG Storage Temperature Range "C
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting torque, 6-32 or M3 srew 10 Ibrin (1.1N-m)
Thermal Resistance
Parameter Typ. Max. Units
ReJC Junction-to-Case - 0.68
Recs Case-to-Sink, Flat, Greased Surface 0.24 - ''C/W
ReJA Junction-to-Ambient - 40
1
7/20/01
IRFP254N
International
TOR Rectifier
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 250 - - V VGS = 0V, ID = 250pA
AV(BR)Dss/ATJ Breakdown Voltage Temp. Coemcient - 0.33 - V/°C Reference to 25°C, ID = 1mA
Roam) Static Drain-to-Source On-Resistance - - 125 mn VGS = 10V, ID = 14A co
VGS(th) Gate Threshold Voltage 2.0 - 4.0 V Vos = VGs, ID = 250pA
gts Forward Transconductance 15 - - S Vos = 25V, ID = 14A©
loss Drain-to-Source Leakage Current - - 25 pA Vros = 250V, VGS = 0V
- - 250 Vros = 200V, VGS = 0V, To = 150°C
less Gate-to-Source Forward Leakage - - 100 nA Vss = 20V
Gate-to-Source Reverse Leakage - - -100 I/ss = -20V
09 Total Gate Charge - - 100 lo = 14A
095 Gate-to-Source Charge - - 17 nC v.33 = 200V
di Gate-to-Drain ("Miller") Charge - - 44 VGS = 10V, See Fig. 6 and 13
tam") Turn-On Delay Time - 14 - VDD = 125V
tr Rise Time - 34 - ID = 14A
tum Turn-Off Delay Time - 37 - ns Rs = 3.69
tf Fall Time - 29 - VGs = 10V, See Fig. 10 ©
u, Internal Drain Inductance - 5.0 - Between tad., _ D
nH 6mm (0.25m.) Q] )
Ls Internal Source Inductance - 13 - from package . G
and center of die contact s
Ciss Input Capacitance - 2040 - l/ss = 0V
Coss Output Capacitance - 260 - Vos = 25V
Crss Reverse Transfer Capacitance - 62 - pF f = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current - - 23 MOSFET symbol D
(Body Diode) A showing the
ISM Pulsed Source Current integral reverse G
(Body Diode)C) - - 92 p-n junction diode. s
Vso Diode Forward Voltage - - 1.3 V To = 25°C, Is = 14A, Was = 0V ©
trr Reverse Recovery Time - 210 310 ns To = 25''C, IF = 14A
Qrr Reverse Recovery Charge - 1.7 2.6 pC di/dt = 100A/ps ©
ton Forward Turn-On Time Intrinsic tum-on time is negligible (tum-on is dominated by LS+LD)
Notes:
C) Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11)
© Starting To = 25°C, L = 3.1mH
RG = 259, IAS = 14A,VGs=10V
TJs175°C
© ISD 5 14A, di/dt s 460A/ps, vDD s V(BR)Dss,
GD Pulse width f 400ps; duty cycle 3 2%.
