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IRFP250MPBF
200V Single N-Channel HEXFET Power MOSFET in a TO-247AC Series M package
International
£212 Rectifier
Advanced Process Technology
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
PD - 96292
IIRFP250MPbF
HEXFET® Power MOSFET
Description
Fifth Generation HEXFETs from International Rectifierutilize advanced processing
techniques to achieve extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized device design that
HEXFET Power MOSFETs are well known for, provides the designer with an
extremely efficient and reliable device for use in a wide variety of applications.
The TO-247 package is preferred for commerciaI-industrial applications where
higher power levels preclude the use of TO-22O devices. The TO-247 is similar
but superiorto the earlierTO-218 package because of its isolated mounting hole.
Ease of Paralleling
Simple Drive Requirements
Lead-Free
VDSS = 200V
A RDS(on) = 0.0759
ID = 30A
TO-247AC
Absolute Maximum Ratings
Parameter Max. Units
ID @ Tc = 25°C Continuous Drain Current, I/ss @ 10V 30
ID @ To = 100°C Continuous Drain Current, Vas © 10V 21 A
IDM Pulsed Drain Current co 120
PD @Tc = 25°C Power Dissipation 214 W
Linear Derating Factor 1.4 W/°C
Vss Gate-to-Source Voltage 1 20 V
EAS Single Pulse Avalanche Energy© 315 mJ
IAR Avalanche CurrentCD 30 A
EAR Repetitive Avalanche Energy© 21 mJ
dv/dt Peak Diode Recovery dv/dt © 8.6 V/ns
To Operating Junction and -55 to +175
Tsms Storage Temperature Range °C
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting torque, 6-32 or M3 srew 10 Ibf-in (1 .1N-m)
Thermal Resistance
Parameter Typ. Max. Units
RBJC Junction-to-Case - 0.7
Recs Case-to-Sink, Flat, Greased Surface 0.24 - °C/W
ReJA Junction-to-Ambient - 40
1
03/01/10
IlRFP250MPbF International
IEER Rectifier
Electrical Characteristics © Tu = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 200 - - V Vas = 0V, ID = 250pA
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coefficient - 0.26 - V/°C Reference to 25°C, ID = 1mA
Rosmn) Static Drain-to-Source On-Resistance - - 0.075 Q I/ss = 10V, ID = 18A ©
Vsam) Gate Threshold Voltage 2.0 - 4.0 V VDs = Vas, ID = 250PA
gfs Forward Transconductance 17 - - S VDs = 50V, ID = 18A 6)
loss Drain-to-Source Leakage Current - - 25 pA VDS = 200V, Vas = 0V
- - 250 Vos = 160V, Vas = 0V, TJ = 150°C
less Gate-to-Source Forward Leakage - - 100 nA Vss = 20V
Gate-to-Source Reverse Leakage - - -100 Vss = -20V
th Total Gate Charge - - 123 lo = 18A
095 Gate-to-Source Charge - - 21 nC VDs = 160V
di Gate-to-Drain ("Miller") Charge - - 57 Vas = 10V, See Fig. 6 and 13 ©
td(on) Turn-On Delay Time - 14 - VDD = 100V
tr Rise Time - 43 - ID = 18A
td(ott) Turn-Off Delay Time - 41 - ns Rs = 3.99
tf Fall Time - 33 - RD = 5.59, See Fig. 10 co
Lo Internal Drain Inductance -- 4.5 - Between Cr") D
M 6mm (0.25m.) Q: )
from package G
Ls Internal Source Inductance - 7.5 - .
and center of die contact s
Ciss Input Capacitance - 2159 - l/ss = 0V
Coss Output Capacitance - 315 - pF Vos = 25V
Crss Reverse Transfer Capacitance - 83 - f = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current - - 30 MOSFET symbol D
(Body Diode) A showing the
ISM Pulsed Source Current integral reverse G
(Body Diode)® - - 120 p-n junction diode. s
VSD Diode Forward Voltage - - 1.3 V Tu = 25°C, Is = 18A, Vai; = 0V G)
trr Reverse Recovery Time - 186 279 ns Tu = 25°C, IF = 18A
a,, Reverse Recovery Charge - 1.3 2.0 “C di/dt = 1OOA/ps GD
ton Forward Turn-On Time Intrinsic tum-on time is negligible (tum-on is dominated by LS+LD)
Notes:
(D Repetitive rating; pulse width limited by
max. junction temperature. (See Fig. 11)
C) Starting Tu = 25°C, L = 1.9mH
Rs = 259, IAS = 18A. (See Figure 12)
TJs175°C
© ISO S 18A, di/dt S 374A/ps, VDD S V(BR)DSS,
GD Pulse width S 300us; duty cycle 3 2%.
