IRFP250PBF ,200V Single N-Channel HEXFET Power MOSFET in a TO-247AC packagePD-9.443D
International
EOR Rectifier IRFP250
HEXFETO Power MOSFET
0 Dynamic dv/dt Rating ..
IRFP250PBF ,200V Single N-Channel HEXFET Power MOSFET in a TO-247AC packagePD-9.443D
International
EOR Rectifier IRFP250
HEXFETO Power MOSFET
0 Dynamic dv/dt Rating ..
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IRFP250-IRFP250PBF
200V Single N-Channel HEXFET Power MOSFET in a TO-247AC package
llrtterrtatiiortal
TOR Rectifier
PD-9.443D
lRFP250
HEXFET® Power MOSFET
Dynamic dv/dt
0 Repetitive Avalanche Rated
Isolated Central Mounting Hole
Fast Switching
Description
Third Generation HEXFETs from International Rectifier provide the designer
with the best combination of fast switching, ruggedized device design, low
Ease of Paralleling
Simple Drive Requirements
Rating
D Kass = 2001/
r, RDS(on) = 0.0859
s ID = 30A
on-resistance and cost-effectiveness.
The TO-247 package is preferred for commercial-industrial applications
where higher power levels preclude the use of TO-220 devices. The TO-247
is similar but superior to the earlier TO-218 package because of its isolated
mounting hole. It also provides greater creepage distance between pins to
meet the requirements of most safety specifications.
TO-247AC
Absolute Maximum Ratings
Parameter Max. Units
ID @ To = 25°C Continuous Drain Current, VGs @ 10 V 30
ID @ To = 100°C Continuous Drain Current, Vas @ 10 V 19 A
IDM Pulsed Drain Current (I) 120
PD © Tc = 25°C Power Dissipation 190 W
Linear Derating Factor 1.5 WPC
l/ss Gate-to-Source Voltage $20 V
EAS Single Pulse Avalanche Energy © 410 mJ
IAR Avalanche Current C) 30 A
EAR Repetitive Avalanche Energy (f) 19 mJ
dv/dt Peak Diode Recovery dv/dt © 5.0 _ V/ns
T, Operating Junction and -55 to +150
TSTG Storage Temperature Range ''C
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
Mounting Torque, 6-32 or M3 screw 10 lbfoin (1.1 N-m)
Thermal Resistance
Parameter Min". Typ. Max. Units
Rm Junction-to-Case - - 0.65
Recs Case-to-Sink, Flat, Greased Surface - 0.24 - °C/W
RBJA Junction-to-Ambient - - 40
lRFP250
Electrical Characteristics iii) Tg = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Test Conditions
V(BR)Dss Drain-to-Source Breakdown Voltage 200 - - V Vss=OV, ID: 250pA
AV(BR)Dss/ATJ Breakdown Voltage Temp. Coefficient - 0.27 - V/°C Reference to 25°C, ID: 1mA
Fusion) Static Drain-to-Source On-Resistance - - 0.085 n VGs=10V, ID:18A (4)
Vesm.) Gate Threshold Voltage 2.0 - 4.0 V VDs=VGs, ID: 250pA
gis Forward Transconductance 12 - - S VDs=50V, ID=18A C4)
loss Drain-to-Source Leakage Current - - 25 pA 1hs=200V, Vss=OV
- m 250 VDs=160V. I/ss-HN, To=125t..,
less Gate-to-Source Forward Leakage - - 100 n A Vss=20V
Gate-to-Source Reverse Leakage - - -1OO Ves=-20V
Qg Total Gate Charge - - 140 |D=SOA
Qgs Gate-to-Source Charge - - 28 n0 VDs=160V
CV, Gate-to-Drain ("Miller") Charge - - 74 VGs=10V See Fig. 6 and 13 ©
id(on) Turn-On Delay Time - 16 - VDD=100V
tr Rise Time - 86 - ns lo=30A
tdmm Turn-Off Delay Time - 7O - Re=6_2Q
tf Fall Time - 62 - Ro=3.2Q See Figure 10 ©
Lo Internal Drain Inductance - 5.0 1 - ttit,vkron.lie.') D
nH from package EEK}
Ls Internal Source Inductance - 13 - and center bf
die contact s
Cass Input Capacitance - 2800 -.r.-. Vss--0V
Coss Output Capacitance - 780 - pF Vos-- 25V
Crss Reverse Transfer Capacitance - 250 - f=1.0MHz See Figure 5
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Test Conditions
ls Continuous Source Current - - 30 MOSFET symbol D
(Body Diode) A showing the b,-a'r
ISM Pulsed Source Current - - 120 integral (averse G tL
(Body Diode) C) p-n junction diode. s
Vso Diode Forward Voltage - - 2.0 V TJ=25°C, ls=30A, VGs=0V ©
tn Reverse Recovery Time - 360 540 ns TJ=25°C, Ip=3OA
er Reverse Recovery Charge - 4.6 6.9 pC di/dt=100A/ps co
ton Forward Turn-On Time Intrinsic turn-on time is negiegible (turn-on is dominated by LS+LD)
Notes:
Ci) Repetitive rating; pulse width limited by
max. junction temperature (See Figure 11)
Q) VDD=50V, starting TJ=25°C, L--683WH
RG=259, IAs=30A (See Figure 12)
TJS150°C
© IsossoA, di/dts190A/ps, VDDs:V(BR)Dss,
@ Pulse width s; 300 us; duty cycle C2%.
