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IRFP244
250V Single N-Channel HEXFET Power MOSFET in a TO-247AC package
ntaig,ritiip,ttiall
Rectifier
HEXFET6 Power MOSFET
o Dynamic dv/dt
Repetitive Avalanche Rated
Isolated Central Mounting Hole
Ease of Paralleling
Simple Drive Requirements
o Fast Switching
Description
Third Generation HEXFETs from International Rectifier provide the designer
with the best combination of fast switching, ruggedized device design, low
PD-9.5888
IRFP244
Rating
D Voss = 250V
" RDS(on) = 0.289
s ID LT.". 15A
on-resistance and cost-effectiveness.
The TO-247 package is preferred for commercial-industrial applications
where higher power levels preclude the use of TO-220 devices. The TO-247
is similar but superior to the earlier TO-218 package because of its isolated
mounting hole. It also provides greater creepage distance between pins to
meet the requirements of most safety specifications,
T04M7AC
Absolute Maximum Ratings
Parameter Max. Units
19 @ Tc = 25°C Continuous Drain Current, Vss @ 10 V 15
lo © Tc = 100°C i Continuous Drain Current, Vos © 10 V 9.7 A
IDM Pulsed Drain Current Ci) 60
Pp @ To = 25°C Power Dissipation 150 W
Linear Derating Factor 1.2 WPC
Vss Gate-to-Source Voltage :20 V
EAS Single Pulse Avalanche Energy © 550 md
IAR Avalanche Current C) 15 T
EAR Repetitive Avalanche Energy Ci) 15 I mJ
dv/dt Peak Diode Recovery dv/dt © 4.8 V/ns
To Operating Junction and -55 to +150
Tsm Storage Temperature Range °C
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
Mounting Torque, 6-32 or MS screw 10 lbfdn (1.1 Nom)
Thermal Resistance
Parameter Min. Typ. Max. Units
Rmc Junction-to-Case - - 0.83
f_clispss Case-to-Sink, Flat, Greased Surface -. 0.24 - "C/W
BUM - Junction-to-Ambient - - 40
IRFP244
Electrical Characteristics tii) TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Test Conditions
V(enmss Drain-to-Source Breakdown Voltage 250 - ..r........ V VGS=0V, ID: 25th1A
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coefficient - 0.37 - VPC Reference to 25°C, ID: 1mA
RDS(on) Static Drain-to-Source On-Resistance - , - 0.28 n VGs=10V, ID=9.OA ©
VGS(lh) Gate Threshold Voltage 2.0 _ - 4.0 v VDs=VGS, lo: 250prA
gfs Forward Transconductance 6.7 - - S Vns=50V, |D=9.OA ©
loss Drain-to-Source Leakage Current - - 25 WA VDs=250V, Ves=01/
- - 250 VDs=200V, VGs=0V, TJ=125°C
less Gate-to-Source Forward Leakage .--- R--., 100 n A Ves=20V
Gate-to-Source Reverse Leakage - - -100 Ves=-20V
q, Total Gate Charge - - 63 |D=11A
Qgs Gate-ta-Source Charge - - 12 " Vos=200V
di Gate-to-Drain ("Miller") Charge - - 39 Vss--10V See Fig. 6 and 13 CE)
tam) Turn-On Delay Time ..-. 14 - Voo=125V
tr Rise Time - 49 - ns kr--11A
td(on) Turn-Off Delay Time - 42 - Re=9.19
tr Fall Time - 24 - RD=11§2 See Figure 10 (C4D
Lo Internal Drain Inductance - 5.0 - itvJr('on.itiand.') D
nH from package if-] )
Ls Internal Source Inductance - 13 - Ind center Of
die contact s
Ciss Input Capacitance - 1400 - VGs=0V
Coss Output Capacitance - 320 - pF Vos-- 25V
Crss Reverse Transfer Capacitance - 73 - f=1.0MHz See Figure 5
Source-Drain Ratings and Characteristics
Parameter Min, Typ. Max. Units Test Conditions
Is Continuous Source Current - - 15 MOSFET symbol D
(Body Diode) A showing the b,-,,:':
ISM Pulsed Source Current - - 60 integral reverse G (o-l'
(Body Diode) (i) p-n junction diode. s
Vso Diode Forward Voltage - - 1.8 V TJ=25°C, ls=15A, Vss=OV ©
tn Reverse Recovery Time - 290 570 ns TJ=25°C, IF=11A
G, Reverse Recovery Charge - 3.1 6.3 wc dildt=100Alps (4)
ton Forward Turn-On Time Intrinsic turn-on time is neglegible (turn-on is dominated by Ls+LD)
Notes:
Cf) Repetitive rating; pulse width limited by
max. junction temperature (See Figure 11)
Q) VDD=50V, starting TJ=25°C, L=3.9mH
RG=25§2, IAs=15A (See Figure 12)
TJS150°C
© ISDS1SA, di/dts150A/us, VDDSV(BR)DSS,
(ii) Pulse width f 300 us; duty cycle 52%.
