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IRFP17N50LS
500V Single N-Channel HEXFET Power MOSFET in a SMD-247 package
PD - 94351
|RFP17N5OLS
HEXFET© Power MOSFET
International
TOR Rectifier SMPS MOSFET
Applications
Switch Mode Power Supply (SMPS)
o Uninterruptible Power Supply Voss RDSion) typ. Trr ID
. High Speed Power Switching 500V 0.28O 170ns 16A
0 ZVS and High Frequency Circuit
0 PWM Inverters
Benefits -
. Low Gate Charge 09 results in Simple Drive Requirement ". ".
. Improved Gate, Avalanche and Dynamic dv/dt Ruggedness glf g
. Fully Characterized Capacitance and Avalanche Voltage , _ g
and Current
. Low Trr and Soft Diode Recovery
q High Performance Optimised Anti-parallel Diode SMD-247
Absolute Maximum Ratings
Parameter Max. Units
ID @ TC = 25''C Continuous Drain Current, VGS @ 10V 16
ID @ Tc = 100°C Continuous Drain Current, VGS @ 10V 11 A
IDM Pulsed Drain Current co 64
Po @Tc = 25°C Power Dissipation 220 W
Linear Derating Factor 1.8 W/°C
VGS Gate-to-Source Voltage * 30 V
dv/dt Peak Diode Recovery dv/dt © 13 V/ns
T J Operating Junction and -55 to + 150
TSTG Storage Temperature Range
Soldering Temperature, for 10 seconds 300 °c,
(1.6mm from case)
Mounting Torque, 6-32 or M3 screw 10 Ibft.in(N.m)
Diode Characteristics
Symbol Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current 16 MOSFET symbol D
(Body Diode) - - A showing the
ISM Pulsed Source Current 64 integral reverse G
(Body Diode) C) - - p-n junction diode. s
VSD Diode Forward Voltage - - 1.5 V To = 25°C, Is = 16A, VGS = 0V ©
. - 170 250 To = 25''C IF = 16A
trr Reverse Recovery Time - 220 330 ns To = 125''C di/dt = 100A/ps ©
- 470 710 TJ = 25°C
Qrr Reverse Recovery Charge _ 810 1210 nC TJ = 125°C
IRRM Reverse Recovery Current - 7.3 11 A
ton Forward Turn-On Time Intrinsic tum-on time is negligible (tum-on is dominated by Ls+LD)
Typical SMPS Topologies
q Bridge Converters o All Zero Voltage Switching
1
11/28/01
|RFP17N50LS
International
TOR Rectifier
Static @ T J = 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units] Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 500 - - V Vss = 0V, ID = 250PA
AV(BR,DSS/ATJ Breakdown Voltage Temp. Coefficient - 0.6 - Vl°C Reference to 25°C, ID = 1mA©
RDs(on) Static Drain-to-Source On-Resistance - 0.28 0.32 Q VGS = 10V, ID = 9.9A ©
VGS(th) Gate Threshold Voltage 3.0 - 5.0 V Vos = Ves, ID = 250pA
. - - 50 pA VDs = 500V, VGS = ov
Koss Drain-to-Source Leakage Current - - 2.0 m A Vos = 400V, VGS = 0V, To = 125°C
I Gate-to-Source Forward Leakage - - 100 n A VGS = 30V
GSS Gate-to-Source Reverse Leakage - - -100 l/cs = -30V
Dynamic @ Tu = 25°C (unless otherwise s ecified)
Symbol Parameter Min. Typ. Max. Units Conditions
gts Forward Transconductance 11 - - S Vos = 50V, ID = 9.9A
Qg Total Gate Charge - - 130 ID = 16A
Qgs Gate-to-Source Charge - - 33 nC Vros = 400V
di Gate-to-Drain ("Miller") Charge - - 59 VGS = 10V ©
tuion) Turn-On Delay Time - 21 - VDD = 250V
tr Rise Time - 51 - ns ID = 16A
td(off) Turn-Off Delay Time - 50 - Rs = 7.59
tr Fall Time - 28 - VGS = 10V GD
Ciss Input Capacitance - 2760 - VGs = 0V
Coss Output Capacitance - 325 - Vros = 25V
Crss Reverse Transfer Capacitance - 37 - pF f = 1.0MHz
Coss Output Capacitance - 3690 - l/ss = 0V, VDS = 1.0V, f = 1.0MHz
Coss Output Capacitance - 84 - VGs = 0V, Vos = 400V, f = 1.0MHz
Coss eff. Effective Output Capacitance - 159 - Vss = 0V, Vos = 0V to 400V ©
Avalanche Characteristics
Symbol Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy© - 390 mJ
IAR Avalanche Current0) - 16 A
EAR Repetitive Avalanche Energy® - 22 mJ
Thermal Resistance
Symbol Parameter Typ. Max. Units
ReJc Junction-to-Case - 0.56
Recs Case-to-Sink, Flat, Greased Surface 0.24 - °C/W
ReJA Junction-to-Ambient - 40
Notes:
co Repetitive rating; pulse width limited by
max. junction temperature.
C) Starting To
IAS = 16A.
= 25°C, L = 3.0mH, Rs = 259,
© Isro S 16A, di/dt S 347A/ps, VDD S V(BR)ross,
TJs150°C
(4) Pulse width 3 300ps; duty cycle s: 2%.
