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IRFP15N60L
600V Single N-Channel HEXFET Power MOSFET in a TO-247AC package
PD - 94415
It ti l
':fliiilTgl(1lfi)rile-l SMPSMOSFET IRFP15N60L
Applications HEXFET@ Power MOSFET
. Zero Voltage Switching SMPS
q Telecom and Server Power Supplies VDSS RDS(0n) typ. Trr typ. ID
0 Uninterruptible Power Supplies 600V 385mQ 130ns 15A
. Motor Control applications
Features and Benefits
. SuperFast body diode eliminates the need for external " PT;
diodes in ZVS applications. f'
Lower Gate charge results in simpler drive requirements.
Enhanced dv/dt capabilities offer improved ruggedness.
q Higher Gate voltage threshold offers improved noise immunity. TO-247AC
Absolute Maximum Ratings
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS@ 10V 15
ID @ To = 100°C Continuous Drain Current, VGS @ 10V 9.7 A
IDM Pulsed Drain Current OD 60
PD @Tc = 25°C Power Dissipation 280 W
Linear Derating Factor 2.3 W/°C
VGs Gate-to-Source Voltage 130 V
dv/dt Peak Diode Recovery dv/dt © 10 V/ns
To Operating Junction and -55 to + 150
TSTG Storage Temperature Range ''C
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
Mounting torque, 6-32 or M3 screw 1.1(10) Nom (Ibfoin)
Diode Characteristics
Symbol Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current - - 15 MOSFET symbol D
(Body Diode) A showing the
ISM Pulsed Source Current - - 60 integral reverse G
(Body Diode) OD p-n junction diode. s
Vso Diode Forward Voltage - - 1.5 V To = 25°C, ls = 15A, VGS = 0V ©
trr Reverse Recovery Time - 130 200 ns TJ = 25°C, IF = 15A
- 240 360 To-- 125°C, di/dt = 100A/ps CO
Qrr Reverse Recovery Charge - 450 670 nC T J = 25°C, Is = 15A, VGS = 0V ©
- 1080 1620 Ts--- 125°C, di/dt = 1OOA/ps Ci)
IRRM Reverse Recovery Current - 5.8 8.7 A T J = 25°C
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
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02/14/03
IRFP15N60L International
TOR Rectifier
Static @ T J = 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 600 - - V Vss = 0V, ID = 250PA
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coefficient - 0.39 - V/°C Reference to 25°C, ID = 1mA
Roswn) Static Drain-to-Source On-Resistance - 385 460 mn Vos = 10V, ID = 9.0A (9
VGS(th) Gate Threshold Voltage 3.0 - 5.0 V Vos = N/ss, ID = 250pA
loss Drain-to-Source Leakage Current - - 50 pA I/ns = 600V, VGS = 0V
- - 2.0 mA Vos = 480V, Ves = 0V, TJ = 125°C
less Gate-to-Source Forward Leakage - - 100 nA VGS = 30V
Gate-to-Source Reverse Leakage - - -100 I/ss = -30V
Re Internal Gate Resistance - 0.79 - Q f= 1MHz, open drain
Dynamic © Tu = 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units Conditions
gts Forward Transconductance 8.3 - - S Ws = 50V, ID = 9.0A
q, Total Gate Charge - - 100 ID = 15A
095 Gate-to-Source Charge - - 30 n0 Ws = 480V
an Gate-to-Drain ("Miller") Charge - - 46 VGS = 10V, See Fig. 7 & 15 C9
td(on) Turn-On Delay Time - 20 - VDD = 300V
t, Rise Time - 44 - ns b = 15A
td(off) Turn-Off Delay Time - 28 - Rs = 1.89
t: Fall Time - 5.5 - I/ss = 10V, See Fig. 11a &11b (0
Ciss Input Capacitance - 2720 - I/ss = OV
Coss Output Capacitance - 260 - Ws = 25V
Crss Reverse Transfer Capacitance - 20 - pF f = 1.0MH2, See Fig. 5
Coss eff. Effective Output Capacitance - 120 - VGS = 0V,Vos = 0V to 480V s
Coss eff. (ER) Effective Output Capacitance - 100 -
(Energy Related)
Avalanche Characteristics
S mbol Parameter
EAS ng se va
IAR va
EAR nergy
Thermal Resistance
Symbol Parameter Typ. Max. Units
RoJc Junction-to-Case - 0.44
R008 Case-to-Sink, Flat, Greased Surface 0.24 - "CIW
ROJA Junction-to-Ambient _ 40
Notes:
co Repetitive rating; pulse width limited by © Pulse width S 300ps; duty cycle S 2%.
max. junction temperature. (See Fig. 11) (9 Coss eff. is a foted capacitance that gives the same charging time
© Starting TJ = 25°C, L = 2.9mH, Rs = 259, as Coss while Vos is rising from 0 to 80% Voss.
lAs = 15A, dv/dt = 10V/ns. (See Figure 12a) Coss eff.(ER) is a fixed capacitance that stores the same energy
© Iso f 15A, di/dt s 340Alps, V00 f V(BR)DSSv as Coss while Vos is rising from O to 80% Voss.
T J S 150°C.
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