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IRFP150N-IRFP150NPBF
100V Single N-Channel HEXFET Power MOSFET in a TO-247AC package
PD - 91503D
|RFP150N
International
Titat, Rectifier
HEXFET*) Power MOSFET
0 Advanced Process Technology D
o Dynoamic dv/dt Rating VDSS = 100V
0 175 C Operating Temperature
o Fast Switching r4 .
"n A R = 0.0369
o Fully Avalanche Rated G DS(on)
. . I = 42A
Description s D
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
The TO-247 package is preferred for commercial-
industrial applications where higher power levels
preclude the use of TO-220 devices. The TO-247 is
similar but superior to the earlier TO-218 package TO-247AC
because of its isolated mounting hole.
Absolute Maximum Ratings
Parameter Max. Units
ID @ Tc = 25°C Continuous Drain Current, VGS @ 10V 42
ID @ Tc = 100°C Continuous Drain Current, I/ss @ 10V 30 A
IDM Pulsed Drain Current C)6) 140
PD @Tc = 25°C Power Dissipation 160 W
Linear Derating Factor 1.1 W/°C
I/ss Gate-to-Source Voltage * 20 V
EAS Single Pulse Avalanche Energy©S 420 mJ
IAR Avalanche CurrenK0S 22 A
EAR Repetitive Avalanche Energy© 16 mJ
dv/dt Peak Diode Recovery dv/dt ($6) 5.0 V/ns
Tu Operating Junction and -55 to + 175
TSTG Storage Temperature Range ''C
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting torque, 6-32 or M3 srew 10 Ibf-in (1 .1N-m)
Thermal Resistance
Parameter Typ. Max. Units
ReJC Junction-to-Case - 0.95
Recs Case-to-Sink, Flat, Greased Surface 0.24 - °C/W
RNA Junction-to-Ambient - 40
1
07/15/02
IRFP150N International
TOR Rectifier
Electrical Characteristics @ Tu = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 100 - - V l/ss = 0V, ID = 250pA
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coeffcient - 0.11 - V/°C Reference to 25°C, ID = 1mAS
RDs(on) Static Drain-to-Source On-Resistance - -- 0.036 f2 VGs = 10V, ID = 23A EO
VGS(th) Gate Threshold Voltage 2.0 - 4.0 V VDs = VGS, ID = 250pA
gfs Forward Transconductance 14 - - S VDs = 25V, ID = 22A©
loss Drain-to-Source Leakage Current - - 25 pA VDS = 100V, VGS = 0V
- - 250 VDS = 80V, VGS = 0V, TJ = 150°C
less Gate-to-Source Forward Leakage - - 100 n A VGS = 20V
Gate-to-Source Reverse Leakage - - -100 VGS = -20V
09 Total Gate Charge - - 110 ID = 22A
Qgs Gate-to-Source Charge - - 15 nC VDs = 80V
di Gate-to-Drain ("Miller") Charge - - 58 VGS = 10V, See Fig. 6 and 13 ©©
td(on) Turn-On Delay Time - 11 - VDD = 50V
tr Rise Time - 56 - ns ID = 22A
td(ott) Turn-Off Delay Time - 45 - R9 = 3.69
tf Fall Time - 40 - RD = 2.99 See Fig. 10 coco
LD Internal Drain Inductance - 5.0 - Between lgad, D
nH 6mm (0.25in.) E )
Ls Internal Source Inductance - 13 - from package G
and center of die contact s
Ciss Input Capacitance - 1900 - VGs = 0V
Coss Output Capacitance - 450 - pF Vos = 25V
Crss Reverse Transfer Capacitance - 230 - f = 1.0MHz, See Fig. 5©
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current - - 42 MOSFET symbol H D
(Body Diode) A showing the ar
ISM Pulsed Source Current integral reverse G I',
(Body Diode) COG) - - 140 p-n junction diode. s
VSD Diode Forward Voltage - - 1.3 V Tu = 25°C, Is =23A, I/ss = 0V co
tn Reverse Recovery Time - 180 270 ns Tu = 25°C, IF = 22A
Qrr Reverse RecoveryCharge - 1.2 1.8 PC di/dt = 100A/ps <4) s
ton Forward Turn-On Time Intrinsic tum-on time is negligible (tum-on is dominated by LS+LD)
Notes:
C) Repetitive rating; pulse width limited by © Pulse width 3 300ps; duty cycle f 2%.
max. junction temperature. ( See fig. 11 )
C) Starting To = 25°C, L = 1.7mH s Uses IRF1310N data and test conditions.
RG = 259, IAS = 22A. (See Figure 12)
C3) la, 3 22A, di/dt s 180A/ps, VDD s V(BR)DSS,
T J 3 175°C
2
