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PD-9.441 D
IRFP150
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IRFP150-IRFP150PBF
100V Single N-Channel HEXFET Power MOSFET in a TO-247AC package
International
BOR Rectifier
HEXFET® Power MOSFET
Dynamic dv/dt
Repetitive Avalanche Rated
Isolated Central Mounting Hole
175°C Operating Temperature
Ease of Paralleling
Simple Drive Requirements
tt Fast Switching
Description
Third Generation HEXFETs from International Rectifier provide the designer
_ with the best combination of fast switching, ruggedized device design, low
PD-9.441 D
lRFP150
Rating
Voss = 100V
RDS(on). = 0.0559
on-resistance and cost-effectiveness.
The TO-247 package is preferred for commercial-industrial applications
where higher power levels preclude the use of TO-220 devices. The TO-247
is similar but superior to the earlier TO-gl 8 package because of its isolated
mounting hole. It also provides greater creepage distance between pins to
meet the requirements of most safety specifications.
TO-247AC
Absolute Maximum Ratings
Parameter Max. Units
ID @ Tc = 25°C Continuous Drain Current, Vas @ 10 V 41
ID @ Tc = 100°C Continuous Drain Current, Ves @ 10 V 29 A
IDM Pulsed Drain Current co 160
Po @ To = 25°C Power Dissipation 230 W
Linear Derating Factor 1.5 WPC
I/ss Gate-to-Source Voltage :20 V
EAS Single Pulse Avalanche Energy © 830 mJ
IAR Avalanche Current Ci) 41 A
EAR Repetitive Avalanche Energy (D 19 md
dv/dt Peak Diode Recovery dv/dt © 5.5 V/ns
Tu Operating Junction and -55 to +175
TSTG Storage Temperature Range °C
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
Mounting Torque, 6-32 or M3 screw 10 tbt-in (1.1 N-m)
Thermal Resistance
Parameter Min. Typ. Max. Units
Rm Junction-to-Case - 0.65 -
Recs Case-to-Sink, Flat, Greased Surface 0.24 - ' °C/W
RNA Junction-to-Ambient - 40 '
IRFP150
Electrical Characteristics @ To = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Test Conditions
V(Bnpss Drain-to-Source Breakdown Voltage 100 - - V VGs=0V, ID: 250pA
AV(BR)DSS/ATJ Breakdown Voltage"Temp. Coefficient - 0.14 - VPC Reference to 25°C, In: 1mA
Fusion) Static Drain-to-Source On-Resistance - - 0.055 n VGs--10V, lo=25A ©
VGS(lh) Gate Threshold Voltage 2.0 - 4.0 V VDs=VGs, lo: 250pA
Js Forward Transconductance 13 - - S Vos=25V, ID=25A ©
loss Drain-to-Source Leakage Current - - 25 11A Vos=100V, Vas=OV
- - 250 Vos=80V, VGs=0V, TJ=150°C
less Gate-to-Source Forward Leakage - - 100 n A Ves=20V
Gate-to-Source Reverse Leakage - - -100 Vas----)
ch, Total Gate Charge - - 140 lo=41A
Qgs Gate-to-Source Charge - - 29 nC VDs=80V
di Gate-to-Drain ("Miller") Charge - - 68 Ves=10V See Fig. 6 and 13 ©
tum) Tum-On Delay Time _ 16 - VDD=50V
t, Rise Time - t 120 - ns ID=41A
tum) Turn-Off Delay Time - 60 - RG=6.2§2
tt Fall Time - 81 - RD=1.29 See Figure 10 ©
Lo Internal Drain Inductance - 5.0 - g :01 ltilnd. ' D
nH from package (5Q
Ls Internal Source Inductance - 13 - Ind center Of
a die contact S
Ciss Input Capacitance - 2800 f - Vss=0V
Coss Output Capacitance - 1100 - pF Vos--.. 25V
Crss Reverse Transfer Capacitance - 280 - f=1.0MHz See Figure 5
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Test Conditions
ls Continuous Source Current - - 41 MOSFET symbol D
(Body Diode) A showing the L-a,',-,,
lsM Pulsed Source Current - - 160 _ integral T"".'."' G (tLl'
(Body Diode) G) p-n junction diode, S
Vso Diode Forward Voltage - - 2.5 V TJ=25°C, Is=41A, Vss=OV ©
trr Reverse Recovery Time - 220 330 ns TJ=25°C, |F=41A
er Reverse Recovery Charge - 1.9 2.9 wc di/dt=100A/ws ©
ton Forward Turn-On Time Intrinsic turn-on time is neglegible (turn-on is dominated by Ls+LD)
Notes:
C) Repetitive rating; pulse width limited by
max. junction temperature (See Figure 11)
© VDD=25V, starting TJ=25°C, L=740PH
RG=25£2, |As=41A (See Figure 12)
TJS175°C
© 130341A, di/dtsc300A/ws, VDDSV(BR)DSS,
© Pulse width S: 300 us; duty cycle 32%.
