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IRFP140NPBF
100V Single N-Channel HEXFET Power MOSFET in a TO-247AC package
. PD-95711
International
TOR lectifier |RFP14ONPbF
HEXFET® Power MOSFET D
Advanced Process Technology
Dynamic dv/dt Rating
175°C Operating Temperature G
Fast Switching
Fully Avalanche Rated s
Voss = 100V
ID = 33A
. Lead-Free
Description
Fifth Generation HEXFEI'S from International Rectifier
utilize advanced processing techniques to achieve the
lowest possible on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETS are well
known for, provides the designer with an extremely efficient
device for use in a wide variety of applications.
The TO-247 package is preferred for cx9mrTnercial-industrial
applications where higher power levels preclude the use of
TC7-220 devices The TCD-Cyl is similar but superior to the
earlier TtD-Ct) package because of its isolated mounting
Absolute Maximum Ratings
Param eter Max. Units
T0-247AC
b C) TC = 25°C
Continuous Drain Current, l/ss (il 1(h/Cs) 33
be TC=100°C
Continuous Drain Current, Ves C) 1(h/Cs)
Pulsed Drain Current os
PD (tfc = 25T
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy C2)Cs)
Avalanche CurrentG)
Repetitive Avalanche Energy®
Peak Diode Recovery dv/dt C3)(S)
Operating Junction and
Storage Temperature Range
-55 to+ 175
Soldering Temperature, for 10 seconds
300 (1.6mm from case)
Mounting torque, 6-32 or M3 screw.
10 lbf-in (1.1 N-m)
Thermal Resistance
Parameter
Junction-to-Case
Case-lo-Sink, Flat, Greased Surface
shmclitm-ttyAmbiepl
8/2/04
|RFP14ONPbF
nternational
TOR Rectifier
Electrical Characteristics e TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
l/toss Drain-toSource Breakdown Voltage 100 - - V l/ss = (JV, b = 250pA
AVEERpss/ATJ Breakdown Voltage Temp. Coefficient - 0.11 - WT Reference to 25°C. b = lmM)
RDS(on) Static Chain-lo-Source On-Resistance - - 0.052 n Vss = lov, b = 16A Ca)
Vssm Gate Threshold Voltage 2.0 - 4.0 V Vos = Vos, b = 250PA
gis Forward Transconductance 11 - - S Vos = 50V, b =16A3)
loss Drain-to-Source Leakage Current :: C] 22550 pA x2: =- {1333/V1/Z::03VTJ = 150°C
loss Gate-to-Source Forward Leakage - - 100 n A Veg = 20V
Gate-to-Source Reverse Leakage - - -100 Vss = -20V
A Total Gate Charge - - 94 b = 16A
Qgs Gate-to-Source Charge - - 15 nC Vos = 80V
di Gate-to-Drain ("Miller") Charge - - 43 Vss = lov, See Fig. 6 and 13 COO)
tam) Tum-On Delay Time - 8.2 - l/oo = 50V
tr Rise Time - 39 - ID = 16A
tam) Turn-Off Delay Time - 44 - M Rs = 5.19
t, Fall Time - 33 - Ro = 3.09, See Fig. 10 @6)
Lo Internal Drain Inductance - 5.0 - Between lead, o
M 6mm (0.25m) 1C3
from package c,
LS Internal Source Inductance - 13 - and center of de contact :
CISS Input Capacitance - 1400 - Veg = 0V
Cass Output Capacitance - 330 - pF Vos = 25V
Crss Reverse Transfer Capacitance - 170 - l f = 1.0MHz. See Fig. 53)
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current - - 33 MOSFET symbol D
(Body Diode) A snowmg the j)
ISM Pulsed Source Current - - 110 Integral reverse 0
(Body Diode) os pm Junction mode. 5
Vso Diode Forward Voltage - - 1.3 V T: = 2YC, Is = 16A, Vss = 0V C9
trT Reverse Recovery Time - 170 250 ns T1: 25''C, Ip =16A
er Reverse RecoveryCharge - 1.1 1.6 " di/dt = 100A/ps O3)
Notes:
C) Repetitive rating; pulse width limited by
(3) Iso S16A, di/dl f 210A/ps, Vco I Virvss,
max. junction temperature. ( See Q. 11 )
TJs 175°C
C) Vos = 25V, starting T: = 25'C, L = 2.0mH
Rc, = 25nls =16A.(See Figure 12)
$) Pulse width I 300ps; duty cycle I 2%.
6) Uses IRF540N data and test conditions.
2
