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IRFP140N-IRFP140N.
33A, 100V, 0.040 Ohm, N-Channel Power MOSFET
PD - 91343B
IRFP140N
International
ISER Rectifier
HEXFET6 Power MOSFET
o Advanced Process Technology
0 Dynamic dv/dt Rating D
o 175°C Operating Temperature VDSS = 100V
q Fast Switching
0 Fully Avalanche Rated G ' FN, RDS(on) = 0.0529
. . ID = 33A
Description s
Fifth Generation HEXFETs from International Recrfer
utilize advanced processing techniques to achieve the
lowest possible on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized ‘1;
device design that HEXFET Power MOSFETs are well LN
known for, provides the designer with an extremely efficient iti)ittiiits;
device for use in a wide variety of applications.
The TO-247 package is preferred for commercial-industrial
applications where higher power levels preclude the use of
TO-220 devices. The TO-247 is similar but superior to the TO-247AC
earlier TO-218 package because of its isolated mounting
Absolute Maximum Ratings
Parameter Max. Units
ID @ Tc = 25°C Continuous Drain Current, VGs @ ION/S 33
ID @ Tc = 100°C Continuous Drain Current, VGs @ 10VS 23 A
IDM Pulsed Drain Current (MD 110
Po @Tc = 25°C Power Dissipation 140 W
Linear Derating Factor 0.91 W/°C
VGS Gate-to-Source Voltage Elo V
EAS Single Pulse Avalanche Energy ©S 300 mJ
IAR Avalanche Current© 16 A
EAR Repetitive Avalanche Energy0) 14 mJ
dv/dt Peak Diode Recovery dv/dt ©© 5.0 V/ns
TJ Operating Junction and -55 to + 175
TSTG Storage Temperature Range ''C
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
Mounting torque, 6-32 or M3 screw. 10 Ibf-in (1 .1N-m)
Thermal Resistance
Parameter Min. Typ. Max. Units
ReJC Junction-to-Case - - 1.1
Recs Case-to-Sink, Flat, Greased Surface - 0.24 - °C/W
ROJA Junction-to-Ambient - - 40
1
10/5/98
IRFP140N International
TOR Rectifier
Electrical Characteristics ti) T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 100 - - V I/ss = 0V, ID = 250pA
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coemcient .-..- 0.11 -.._ V/°C Reference to 25°C, ID = ImAS
RDS(on) Static Drain-to-Source On-Resistance - - 0.052 n Ves = 10V, lo = 16A Cr)
VGS(th) Gate Threshold Voltage 2.0 - 4.0 V V93 = VGs, ID = 250pA
gts Forward Transconductance 11 - - S Vros = 50V, ID = 16A©
. - - 25 V93 = 100V, VGS = OV
I D -t -S L k C t
DSS ran 0 ouroe ea age urren - - 250 pA VDs = 80V, VGS = 0V, TJ = 150°C
I Gate-to-Source Forward Leakage - - 100 n A VGS = 20V
GSS Gate-to-Source Reverse Leakage - - -100 VGS = -20V
% Total Gate Charge - - 94 ID = 16A
Qgs Gate-to-Source Charge - - 15 nC Vros = 80V
di Gate-to-Drain ("Miller") Charge - - 43 VGS = 10V, See Fig. 6 and 13 @©
tam) Turn-On Delay Time - 8.2 - VDD = 50V
t, Rise Time - 39 - ID = 16A
tdm) Turn-Off Delay Time - 44 - ns Rs = 5.19
tf Fall Time - 33 - RD = 3.09, See Fig. 10 (406)
Ln Internal Drain Inductance - 5.0 - Between f) D
nH 6mm (0.25In.) )
L I t I S I d ct from package G
S n ema ouroe n u ance 13 and center of die contact s
Ciss Input Capacitance - 1400 - VGS = 0V
Cass Output Capacitance - 330 - pF I/os = 25V
Crss Reverse Transfer Capacitance - 170 - l f = 1.0MHz, See Fig. "
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current MOSFET symbol D
. - - 33
(Body Diode) A showmg me
ISM Pulsed Source Current - - 110 integral reverse G
(Body Diode) (1)6) p-n junction diode. s
Vso Diode Forward Voltage - - 1.3 V Tu = 25°C, Is = 16A, Was = 0V ©
trr Reverse Recovery Time - 170 250 ns Tu = 25°C, I; = 16A
Qrr Reverse RecoveryCharge - 1.1 1.6 pC di/dt = 100/Vps @©
Notes:
C) Repeti.tive rating; pulse width limited by © ISD 3 16A, di/dt s 210Alps, V00 f V(BR)DSS,
max. junction temperature. ( See fig. 11 ) TJ: 175°C
© Vroro = 25V, starting To = 25°C, L = 2.0mH G) Pulse width f 300ps; duty cycle 3 2%.
Re: 259, IAS-- 16A. (See Figure 12)
(S) Uses IRF540N data and test conditions.
