IRFP054NPBF ,55V Single N-Channel HEXFET Power MOSFET in a TO-247AC packageapplications where higher power levels preclude the use of
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IRFP054PBF ,60V Single N-Channel HEXFET Power MOSFET in a TO-247AC packageInternational PD-9.544A
TOR Rectifier IRFP054
HEXFET® Power MOSFET
q Dynamic dv/dt Rating
..
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IRFP054NPBF
55V Single N-Channel HEXFET Power MOSFET in a TO-247AC package
PD- 95423
International IRFP054NPbF
TOR REC“ fi er HEXFEP Power MOSFET
0 Advanced Process Technology D -
0 Dynamic dv/dt Rating Voss - 55V
0 175°C Operating Temperature RDSW = 0.0129
. Fast Switching G
o Fully Avalanche Rated s ID = 81A@
. Lead-Free
Descri pti on
Fifth Generation HEXFEI's from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFEI's are well
known for, provides the designerwith an extremely efficient
and reliable device for use in a wide variety of applications.
T0-247AC
The TO-247 package is preferred for commercial-industrial
applications where higher power levels preclude the use of
TCD-QM devices. The TO-247 is similar but superior to the
earlier TO-2‘18 package because of its isolated mounting
Absolute Maximum Ratings
Parameter Max. Units
b (il Tc = 25°C Continuous Drain Current, Veg (ll 10V 816)
b (il Tc = 100°C Continuous Drain Current, Vss (il 10V 57 A
bs, Pulsed Drain Current COS 290
PD (ilTc = 25''C Power Dissipation 170 W
Linear Derating Factor 1.1 Wf'C
l/ss Gale-ttAk- Voltage , 20 V
Fas Single Pulse Avalanche Energy0M9 360 ml
IAR Avalanche Current® 43 A
EAR Repetitive Avalanche Energy® 17 m,)
dv/dt Peak Diode Recovery dv/dt ss 5.0 V/ns
T: Operating Junction and -55 to + 175
TSTG Storage Temperature Range T
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting torque, 6-32 or M3 srew 10 Ibf-in (1.1N-m)
Thermal Resistance
Parameter Typ. Max. Units
Rex; Junction-toCase - 0.90
Recs Case-toSink. Flat, Greased Surface 0.24 - °CNV
RM Junction-to-Ambient - 40
1
06/16/04
IRFP054NPbF International
TOR Rectifier
Electrical Characteristics @ To = 25''C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 55 - - V Vos = 0V, ID = 250pA
AV(BR)DSE/ATJ Breakdown Voltage Temp. Coefrcient - 0.06 - W'C Reference to 25''C, ID = 1mA©
RDSW) Static Drain-to-Source On-Resistance - - 0.012 Q Vos = 10V, ID = 43A ©
Vosam Gate Threshold Voltage 2.0 - 4.0 V Ws = Vas, k, = 250PA
git Forward Transconductance 30 - - S I/ce = 25V, ID = 43AS
loss Drain-to-Source Leakage Current - - 25 “A l/ce = 55V, Vss = 0V
- - 250 Ws = 44V, I/ss = OV, Tu = 150°C
less Gate-to.Source Forward Leakage - - 100 nA Ws = 20V
Gate-to-Source Reverse Leakage - - -100 Vos = -20V
% Total Gate Charge - - 130 ID = 43A
Qgs Gate-to-Source Charge - - 23 nC Ws = 44V
di Gate-to-Drain ("Miller") Charge - - 53 Vos = 10V, See Fig. 6 and 13 ss
tam) Turn-On Delay Time - 11 -... VDD = 28V
tr Rise Time - 66 - ns ID = 43A
tam) Turn-Off Delay Time - 40 - Ro = 3.6Q
tr FallTime - 46 - RD = 0.629, See Fig. 1(KO@
LD Intemal Drain Inductance - 5.0 - 2::‘23252153' D
from package 0
Ls Intemal Source Inductance - 13 - .
and center of die contact s
Css Input Capacitance - 2900 - I/ss = 0V
Coss Output Capacitance - 880 - pF VDS = 25V
Crss Reverse Transfer Capacitance - 330 - I = 1.0MHz, See Fig. 56)
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current MOSFETsymbol C)
(Body Diode) - - 81© A showing the
ISM Pulsed Source Current - - 290 integral reverse G
(Body Diode) 0) p-n junction diode. s
Vso Diode Forward Voltage - - 1.3 V Tu = 25''C, IS = 43A, Ws = 0V G)
trr Reverse Recovery Time - 81 120 ns T.) = 25°C, IF = 43A
2, Reverse RecoveryCharge - 240 370 nC di/dt = 100A/ps ©©
Notes:
C) Repetitive rating: pulse width limited by © Pulse width I 300ps: duty cycle I 2%.
max. junction temperature. ( See fig. 11 )
© VDD = 25V, starting Tu = 25''C, L = 390PH G) Uses 1RF1010N data and test conditions
Rs = 25ft, IAS = 43A. (See Figure 12)
© ISDS 43A, di/dt C 260A/ps, VDDSV(BR)DSS. © Pculatef continuous current based on maximum allqwable
TJ5175°C junction temperatureffor rfco..nyy.nded current-handling of the
package refer to Design Tip # 93-4
2
