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IRFP054N
55V Single N-Channel HEXFET Power MOSFET in a TO-247AC package
PD - 9.1382A
IRFP054N
HEXFET® Power MOSFET
International
TOR, Rectifier
0 Advanced Process Technology D
o Dynoamlc dv/dt Rating VDSS = 55V
o 175 C Operating Temperature
0 Fast Switching _ -
o Fully Avalanche Rated G i‘“ A RDS(on) 0'0129
ID = 81A©
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit, l
combined with the fast switching speed and ruggedized tl', 6
device desi n that HEXFET Power MOSFETs are well
known for, pgovides the designer with an extremely efficient 'iiitiiliiiiiiiis;
and reliable device for use in a wide variety of applications.
The TO-247 package is preferred for commerciaI-industrial
applications where higher power levels preclude the use of
TO-220 devices. The TO-247 is similar but superior to the TO-247AC
earlier TO-218 package because of its isolated mounting
Absolute Maximum Ratings
Parameter Max. Units
ID @ Tc = 25''C Continuous Drain Current, VGS @ 10V 81©
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 57 A
IDM Pulsed Drain Current (06) 290
Pro @TC = 25°C Power Dissipation 170 W
Linear Derating Factor 1.1 W/°C
Ves Gate-to-Source Voltage 1 20 V
EAS Single Pulse Avalanche Energy©© 360 m]
IAR Avalanche Current(0 43 A
EAR Repetitive Avalanche EnergyCD 17 mJ
dv/dt Peak Diode Recovery dv/dt ©© 5.0 V/ns
Tu Operating Junction and -55 to + 175
TSTG Storage Temperature Range (
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting torque, 6-32 or M3 srew 10 Ibfoin (1.1N-m)
Thermal Resistance
Parameter Typ. Max. Units
Rouc Junction-to-Case - 0.90
Recs Case-to-Sink, Flat, Greased Surface 0.24 - °CNV
Ran Junction-to-Ambient - 40
8/25/97
IRFP054N International
IEBR Rectifier
Electrical Characteristics @ Tu = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 55 - - V VGS = 0V, ID = 250pA
AV(BR)Dss/ATJ Breakdown Voltage Temp. Coeffcient - 0.06 - V/°C Reference to 25°C, ID = 1mA©
RDS(on) Static Drain-to-Source On-Resistance - - 0.012 f2 VGs = 10V, ID = 43A (if)
VGs(m) Gate Threshold Voltage 2.0 - 4.0 V VDs = VGs, ID = 250pA
gig Forward Transconductance 30 - - S VDs = 25V, ID = 43A©
loss Drain-to-Source Leakage Current - - 25 PA l/os = 55V, VGS = 0V
- - 250 Vos = 44V, VGS = 0V, Tu = 150°C
less Gate-to-Source Forward Leakage - - 100 n A VGs = 20V
Gate-to-Source Reverse Leakage - - -100 VGS = -20V
% Total Gate Charge - - 130 ID = 43A
Qgs Gate-to-Source Charge - - 23 n0 VDS = 44V
di Gate-to-Drain ("Miller") Charge - - 53 VGS = 10V, See Fig. 6 and 13 C4DOD
td(on) Turn-On Delay Time - 11 - VDD = 28V
tr Rise Time - 66 - ns ID = 43A
tum) Turn-Off Delay Time - 40 - R3 = 3.69
tf FaIITime - 46 - RD = 0.629, See Fig. 10@©
. Between lead, D
LD Internal Drain Inductance - 5.0 - .
nH 6mm(0.25in.) E )
Ls Internal Source Inductance - 13 - from package G
and center of die contact s
Ciss Input Capacitance - 2900 - VGs = 0V
Cass Output Capacitance - 880 - pF Vos = 25V
Crss Reverse Transfer Capacitance - 330 - f = 1.0MHz, See Fig. 56)
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current MOSFETsymbol D
. - - 81 © . F
(Body Diode) A showing the ar
ISM Pulsed Source Current - - 290 integral reverse G E
(Body Diode) co p-n junction diode. s
VSD Diode Forward Voltage - - 1.3 V To = 25°C, Is = 43A, VGS = 0V ©
trr Reverse Recovery Time - 81 120 ns To = 25°C, IF = 43A
Qrr Reverse RecoveryCharge - 240 370 nC di/dt = 100A/ps ©©
Notes:
C) Repetitive rating; pulse width limited by GD Pulse width f 300ps; duty cycle f 2%.
max. junction temperature. ( See fig. 11 )
© VDD = 25V, starting TJ = 25°C: L = 390pH G) Uses 1RF1010N data and test conditions
Rs = 259, IAS = 43A. (See Figure 12)
© Isro 3 43A, di/dts 260A/ps, VDDS V(BR)DSS: © Faculatef continuous current based on maximum allgwable
Tu S 175°C junction temperature;for recommended current-handling of the
package refer to Design Tip # 93-4
