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IRFP048NPBF
55V Single N-Channel HEXFET Power MOSFET in a TO-247AC package
PD- 95422
International
TOR lectifier IRFP048NPbF
. Advanced Process Technology HEXFETW Power MOSFET
. Dynamic dv/dt Rating D
. 175°C Operating Temperature Voss = 55V
. Fast Switching =
a Fully Avalanche Rated G R05”) 0.016ft
q Lead-Free s ID = 64A
Description
Fifth Generation HEXFETsfrom International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
The TO-247 package is preferred for commercial-
industrial applications where higher power levels T0-247AC
preclude the use of TO-220 devices. The TO-247 is
similar but superior to the earlier TO-218 package
because of its isolated mounting hole.
Absolute Maximum Ratings
Parameter Max. Units
b C) TC = 25°C Continuous Drain Current, Vss (i) 10V 64
b C) Tc = 100°C Continuous Drain Current, l/ss C) 10V 45 A
IDM Pulsed Drain Current (D6) 210
PD (tfc = 25°C Power Dissipation 140 W
Linear Derating Factor 0.90 W/°C
Veg Gate-to-Source Voltage , 20 V
EAS Single Pulse Avalanche Energy0)(9 270 m)
IAR Avalanche Current0JS 32 A
EAR Repetitive Avalanche EnergyG) 14 m)
dv/dt Peak Diode Recovery dv/dt QQ 5.0 V/ns
T: Operating Junction and -55 to + 175
TSTG Storage Temperature Range ''0
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
Mounting torque. 6-32 or M3 srew 10 lbf-in (1.1N-m)
Thermal Resistance
Parameter Typ. Max. Units
Rm Jtmctitm-ttyCase - 1.1
Recs Case-toSink, Flat, Greased Surface 0.24 - TM/
RQJA Junction-to-Ambient - 40
1
06/1 6/04
IRFP048NPbF International
TOR Rectifier
Electrical Characteristics (ii) Tu = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
VeRVss Drain-to-Source Breakdown Voltage 55 - - V Veg = OV, lo = 250pA
AV(BR)DSE/ATJ Breakdown Voltage Temp. Coemcient - 0.052 - vrc Reference to 25''C, lo = 1mAS
Roaon) Static Drain-to-Source On-Resistance - - 0.016 n Vos = lov, b = 37A 6)
V03(th) Gate Threshold Voltage 2.0 - 4.0 V Vos = Vas, b = 250pA
Pt Forward Transconductance 22 - - S Vos = 25V, ID = 32A©
loss Drain-toSource Leakage Current - - 25 PA Vos = 55V, Vos = 0V
- - 250 Vos = 44V, Vss = OV, Tu =150°C
I Gate-tty-Source Forward Leakage - - 100 n A Vss = 20V
GSS Gate-to-Source Reverse Leakage - - -100 Vss = -201/
% Total Gate Charge - - 89 ID = 32A
Qgs Gate-to-Source Charge - - 20 nC Vos = 44V
' Gate-to-Drain ("Miller") Charge - - 39 Vss = 10V, See Fig. 6 and 13 (9Cs)
tcon) Turn-On Delay Time - 11 - l/oo = 28V
l, Rise Time - 78 - ns ID: 32A
tam) Turn-Off Delay Time - 32 - Rs = 5.19
h Fall Time - 48 - RD = 0.859, See Fig. 10 cos
. Between lead, D
LD Internal Drain Inductance - 5.0 - 6mm (0.25in.)
from package 6
LS Internal Source Inductance - 13 - .
and center of die contact 3
Css Input Capacitance - 1900 - Vss = 0V
Coss Output Capacitance - 620 - PF Vos = 25V
Crss Reverse Transfer Capacitance - 270 - f = 1.0MHz. See Fig. "
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
IS Continuous Source Current 45 MOSFET symbol D
(Body Diode) - - showing the
ISM Pulsed Source Current 210 A integral reverse G
(Body Diode) os - - pm junction diode. s
l/so Diode Forward Voltage - - 1.3 V Tu = 25''C, Is = 37A, Vos = 0V co
hr Reverse Recovery Time - 94 140 ns Tu = 25°C. IF = 32A
A, Reverse RecoveryCharge - 360 540 nC di/dt = 100/Ws ss
Notes:
CO Repetitive rating; pulse width limited by @ Pulse width s: 300psi duty cycle g 2%.
max. junction temperature. ( See fg 11 )
C) VDD = 25V, starting Tu = 25°C, L = 530pH s Uses IRFZ48N data and test conditions
Rs = 259. IAS; = 32A. (See Figure 12)
Q Iso S 32A, di/dt I 250/Vps, VDD S V(BRDSS.
Tu I 175°C
2
