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IRFP048
60V Single N-Channel HEXFET Power MOSFET in a TO-247AC package
International
Rectifier
PD-9.820
IRFP048
HEXFET® Power MOSFET
Description
Third Generation HEXFETs from International Rectifier provide the designer
with the best combination of fast switching, ruggedized device design, low
Dynamic dv/dt Rating
Isolated Central Mounting Hole
175°C Operating Temperature
Ease of Paralleling
Simple Drive Requirements
Voss = 60V
RDS(on) = 0.0189
ID = 70*A
on-resistance and cost-effectiveness,
The TO-247 package is preferred for commercial-industrial applications
where higher power levels preclude the use of TO-220 devices. The TO-247
is similar but superior to the earlier TO-218 package because of its isolated
mounting hole. It also provides greater creepage distance between pins to
meet the requirements of most safety specifications.
TO-247AC
Absolute Maximum Ratings
Parameter Max. fUnits
ID @ Tc = 25°C Continuous Drain Current, VGs © 10 V 70*
lo @ Tc = 100°C Continuous Drain Current, Ves @ 10 V 52 -- A
IDM Pulsed Drain Current C) 290
Po @ Tc = 25°C Power Dissipation 190 W
Linear Derating Factor 1.3 WPC
Ves Gate-to-Source Voltage d:20 [ V
EAs Single Pulse Avalanche Energy C2) 200 I md
J dv/dt Peak Diode Recovery dv/dt (3 4.5 I V/ns
To Operating Junction and -55 to +175
TSTG Storage Temperature Range :'C
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
Mounting Torque, 6-32 or M3 screw 10 Ibf-in (1.1 N-m) ‘ -
Thermal Resistance
Parameter -i.vorta. Typ. l Max. Units
Redo Junction-to-Case - - I 0.80 w
Recs Case-to-Sith Flat, Grggd Surface - 0.24 t - °C/W
LM~_ Junction-to-Ambient - - l 40 i -
lRFP048 Bdhit
Electrical Characteristics @ TJ LT. 25°C (unless otherwise specified)
Parameter 1 Min. 1 Typ. Max. Units Test Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 60 - - V VGS=OV, ID: 250pA
I AV(BR)DSS/ATJ Breakdown Voltage Temp. Coefficient - 0.060 - V/°C Reference to 25°C, lo: 1mA
Rosen) Static Drain-to-Source On-Resistance - - 0.018 f2 VGs=10V, lo=44A ©
VGS(lh) Gate Threshold Voltage 2.0 - 4.0 V Vos-P/as, ID---. 250pA
_gls Forward Transconductance 2O - - S Vos=25V, b--44A ©
loss Drain-to-Source Leakage Current - _ 25 ' HA Vrs=60V, 1/ar=01/
- - 250 Vos=48V, I/ss-HN, TJ=150°C
less Gate-to-Source Forward Leakage - - 100 n A Vss=20V _------
_ Gate-to-Source Reverse Leakage - _-__-loo var-...-)
th Total Gate Charge - - 110 ln=72A
Qgs Gate-to-Source Charge - ' - 29 nC Vos=48V
di Gate-to-Drain ("Miller") Charge - f - 38 VG5=10V See Fig. 6 and 13 ©
won) ___J Turn-On Delay‘lrggg - 8.1 - VDD=30V
tr Rise Time - 250 - ko=72A
. r-w ns .
AIP/L_, Turn-Off Delay Time - 210 - _ Rs=9.1n
tf Fall Time - 250 - RD=0.34Q See Figure 10 ©
Lo Internal Drain Inductance -' 5.0 - tritg,er,12tf.') D
nH from package GE
Ls Internal Source Inductance - 13 - and center df
3 die contact 5
Css Input Capacitance _ - 2400 - VGs=OV
Coss Output Capacitance - 1300 - pF V95: 25V
Crss _etytrse1t1r1ser_1ia_pEit_arEC., - 190 - f=1.0MHz See Figure 5
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Test Conditions
ls Continugus Source Current - - 70* MOSFET symbol D
t (Body Diode) A showing the F7:
ISM l, Pulsed Source Current - _ 290 integral reverse G (trl,
(Body Diode) Ci) p-n junction diode. S
Hvsi. Diode Forward Voltage - - 2.0 V TJ=25°C, Is=73A, VGS=0V ©
tn Reverse Recovery Time - 120 180 ns TJ=25OC, IF=72A
er Reverse Recovery Charge - 0.50 0.80 1.10 di/dt=100A/us @
ton Forward Turn-On Time Intrinsic turn-on time is neglegible (turn-on is dominated by Ls+LD)
Notes:
CO Repetitive rating; pulse width limited by © ISDS72A, di/dts200A/ps, VDDSV(BR)DSS,.
max. junction temperature (See Figure 11) TJS175°C
2 VDD=25V. starting TJ=25OC, L---43WH (ii) Pulse width f 300 us; duty cycle s2%.
RG=2SQ, IAS--73A (See Figure 12)
A Current limited by the package, (Die Current =73A)
