IRFP044 ,60V Single N-Channel HEXFET Power MOSFET in a TO-247AC packageInternational
TOR Rectifier
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q Dynamic dv/dt Rating
. Isolated Cent ..
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IRFP044
60V Single N-Channel HEXFET Power MOSFET in a TO-247AC package
PD-9.583B
International
Tthit Rectifier llRFP044
HEXFET® Power MOSFET
o Dynamic dv/dt Rating
Isolated Central Mounting Hole
0 175°C Operating Temperature
o FastSwitching
0 Ease of Paralleling
It Simple Drive Requirements
VDSS = 60V
RDS(OH) = 0.0289
ID Tl".' 57A
Description
Third Generation HEXFETs from International Rectifier provide the designer
with the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
The TO-M package is preferred for commercial-industrial applications _‘ "
where higher power levels preclude the use of TO-220 devices. The TO-247 T,
is similar but superior to the earlier TO-218 package because of its isolated
mounting hole. It also provides greater creepage distance between pins to
meet the requirements of most safety specifications.
TO-247AC
Absolute Maximum Ratings
, Parameter Max. Units
lo @ Tc = 25°C Continuous Drain Current, Ves © 10 V 57
lo a Tc = 100°C Continuous Drain Current, VGs © 10 V 40 A
lou Pulsed Drain Current S 230
PD @ Tc = 25°C Power Dissipation 180 W
Linear Derating Factor ------ 1.2 W/°C
Vas Gate-to-Source Voltage $20 V
EAS Single Pulse Avalanche Energy (2) 53 mJ
dv/dt Peak Diode Recovery dv/dt © 4.5 V/ns
TJ . Operating Junction and -55 to +175
TSTG Storage Temperature Range °C
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
Mounting Torque, 6-32 or M3 screw 10 Ibfoin (1.1 N-m)
Thermal Resistance
__~_ Parametig Min, Typ. Max. Units
RM; Junction-to-Case H - - 0.83
_Racs Case-to-Sink, Flat, Greased§grface - 0.24 - °C/W
RaJA Junction-to-Ambient - - 40
IRFP044
Electrical Characteristics tii) Tg 'IT. 25°C (unless otherwise specified)
ilird)R
Parameter Min. Typ. 5 Max. Units Test Conditions
V(Bamss Drain-to-Source Breakdown Voltage 60 - - V VGS=OV, ID: 25OWA
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coefficient - 0.060 - VPC Reference to 25°C, ID: 1mA
Flown) Static Drain-to-Source On-Resistance B.....- - 0.028 Q VGs=10V, 10:34A ©
VGS(th) Gate Threshold Voltage 2.0 - 4.0 V VDs=VGs, ID: 250PA
gys Forward Transconductance 17 - - S Vns=25V, lo=34A (i9
IDSS Drain-to-Source Leakage Current - - 25 pA Vros=60V, Var-OV
- - 250 Vos=48V, Vas=OV, Tr--1500C
loss Gate-to-Source Forward Leakage - - 100 n A VGs=20V
Gate-to-Source Reverse Leakage - - -100 Ves=-2OV
Qg : Total Gate Charge - - 95 ID=52A
Qgs Gate-to-Source Charge - - 27 nC VDs=48V
di Gate-to-Drain ("Miller") Charge - - 46 Vss--10V See Fig. 6 and 13 ©
td(on) Turn-On Delay Time - 19 - VDD=30V
tr Rise Time - 120 - ns lir--52A
idiom Turn-Off Delay Time - 55 - Re=9.1Q
t: Fall Time - 86 - RD=O.56§2 See Figure 10 co
LD Internal Drain Inductance - 5.0 - E 'it/r/l". 212: ') D
nH from package iii-i'
Ls Internal Source Inductance - 13 - and center df Ki)
die contact 5
Ciss Input Capacitance - 2500 - Ves=OV
Cass Output Capacitance - 1200 - pF V95: 25V
Crs,S Reverse Transfer Capacitance - 200 - f=1.0MHK See Figure 5
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Test Conditions
ls Continuous Source Current - - 57 MOSFET symbol D
(Body Diode) A showing the L,-,.,
ISM Pulsed Source Current - - 230 inte.gral rgversp G
(Body Diode) CO p-n junction diode. s
Vso Diode Forward Voltage - - 2.5 V TJ=2SOC, Is=57A, VGs=0V ©
tn Reverse Recovery Time - 1 140 300 ns To=25oC, lr=52A
Orr Reverse Recovery Charge - 1.2 2.8 wc di/dt=100A/pis ©
ton Forward Turn-On Time Intrinsic turn-on time is neglegible (turn-on is dominated by LsrrLn)
Notes:
Ci) Repetitive rating; pulse width limited by
max. junction temperature (See Figure 11)
© VDD=25V, starting TJ=25°C, L=19yH
RG=25Q, lAs=57A (See Figure 12)
TJS175°C
© ISDSSZA, di/dts250A/ps, VDDSV(BR)DSS.
© Pulse width f 300 ps; duty cycle 32%.
