IRFNL210B ,200V N-Channel B-FET TO-92LFeaturesThese N-Channel enhancement mode power field effect 1.0A, 200V, R = 1.5Ω @V = 10 VDS(on) ..
IRFP044 ,60V Single N-Channel HEXFET Power MOSFET in a TO-247AC packageInternational
TOR Rectifier
HEXFET® Power MOSFET
q Dynamic dv/dt Rating
. Isolated Cent ..
IRFP044N ,55V Single N-Channel HEXFET Power MOSFET in a TO-247AC packageapplications where higher power levels preclude the use ofTO-220 devices. The TO-247 is similar bu ..
IRFP044NPBF ,55V Single N-Channel HEXFET Power MOSFET in a TO-247AC packageapplications where higher power levels preclude the use of
TO-220 devices. The TO-247 is similar b ..
IRFP044PBF , HEXFET Power MOSFET
IRFP048 ,60V Single N-Channel HEXFET Power MOSFET in a TO-247AC packageapplications
where higher power levels preclude the use of TO-22O devices. The TO-247
is similar ..
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IRFNL210B
200V N-Channel B-FET TO-92L
IRFNL210B IRFNL210B 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 1.0A, 200V, R = 1.5Ω @V = 10 V DS(on) GS transistors are produced using Fairchild’s proprietary, Low gate charge ( typical 7.2 nC) planar, DMOS technology. Low Crss ( typical 6.8 pF) This advanced technology has been especially tailored to Fast switching minimize on-state resistance, provide superior switching 100% avalanche tested performance, and withstand high energy pulse in the Improved dv/dt capability avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters, switch mode power supplies, DC-AC converters for uninterrupted power supply and motor control. D ! ! "" !!"" "" G! ! "" TO-92L IRFNL Series ! ! G D S S Absolute Maximum Ratings T = 25°C unless otherwise noted C Symbol Parameter IRFNL210B Units V Drain-Source Voltage 200 V DSS I - Continuous (T = 25°C) Drain Current 1.0 A D C - Continuous (T = 100°C) 0.93 A C I (Note 1) Drain Current - Pulsed 10 A DM V Gate-Source Voltage ± 30 V GSS E (Note 2) Single Pulsed Avalanche Energy 40 mJ AS I Avalanche Current (Note 1) 3.3 A AR E (Note 1) Repetitive Avalanche Energy 0.031 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 5.0 V/ns P Power Dissipation (T = 25°C) 3.1 W D C - Derate above 25°C 0.025 W/°C T , T Operating and Storage Temperature Range -55 to +150 °C J STG Maximum lead temperature for soldering purposes, T 300 °C L 1/8" from case for 5 seconds Thermal Characteristics Symbol Parameter Typ Max Units R Thermal Resistance, Junction-to-Lead -- 40 °C/W θJL ©2002 Rev. A, December 2002
