25V Single N-Channel HEXFET Power MOSFET in a Micro 3 package **Manufacturer:** Infineon Technologies
**Part Number:** IRFML8244TRPBF
### **Specifications:**
- **Technology:** MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor)
- **Type:** N-Channel
- **Drain-Source Voltage (VDS):** 250V
- **Continuous Drain Current (ID):** 2.7A
- **Pulsed Drain Current (IDM):** 10.8A
- **Power Dissipation (PD):** 38W
- **Gate-Source Voltage (VGS):** ±20V
- **On-Resistance (RDS(on)):** 1.2Ω (max) @ VGS = 10V
- **Threshold Voltage (VGS(th)):** 2V (min) – 4V (max)
- **Input Capacitance (Ciss):** 130pF (typ)
- **Output Capacitance (Coss):** 25pF (typ)
- **Reverse Transfer Capacitance (Crss):** 8pF (typ)
- **Turn-On Delay Time (td(on)):** 12ns (typ)
- **Turn-Off Delay Time (td(off)):** 35ns (typ)
- **Operating Temperature Range:** -55°C to +150°C
- **Package:** TO-252 (DPAK)
### **Descriptions & Features:**
- **High Voltage MOSFET:** Designed for switching applications up to 250V.
- **Low Gate Charge:** Enables fast switching performance.
- **Low On-Resistance:** Improves efficiency in power applications.
- **Avalanche Energy Rated:** Provides robustness in inductive load switching.
- **Lead-Free & RoHS Compliant:** Environmentally friendly.
- **Applications:** Used in power supplies, motor control, DC-DC converters, and other high-voltage switching circuits.
This information is sourced from Infineon's official datasheet for the IRFML8244TRPBF.
