IRFM9240 ,-200V Single P-Channel Hi-Rel MOSFET in a TO-254AA packageapplications such as switch- Simple Drive Requirementsing power supplies, motor controls, inverter ..
IRFML8244TRPBF ,25V Single N-Channel HEXFET Power MOSFET in a Micro 3 packagePD - 97587AIRFML8244TRPbFHEXFET Power MOSFETV 25 VDSV ± 20 VGS Max
IRFM9240
-200V Single P-Channel Hi-Rel MOSFET in a TO-254AA package
Internal onol
TOR Rectifier
POWER MOSFET
THRU-HOLE (TO-254AA)
Product Summary
Part Number RDS(on) ID
IRFM9240 0519 -11A
HEXFET® MOSFET technology is the key to International
Rectifer's advanced line of power MOSFET transistors. The
efrlcient geometry design achieves very low on-state resis-
tance combined with high transconductance. HEXFET tran-
sistors also feature all of the well-established advantages
of MOSFETs, such as voltage control, very fast switching,
PD - 90497F
IRFM9240
JANTX2N7237
JANTXV2N7237
JANSZN7237
REF:MIL-PRF-1 9500/595
200V, P-CHANNEL
HEXFET' MOSFETTECHNOLOGY
TO-254AA
ease of paralleling and electrical parameter temperature Features:
stability. They are well-suited for applications such as switch-
ing power supplies, motor controls, inverters, choppers, " Simple Drive Requirements
audio amplifiers, high energy pulse circuits, and virtually " Ease of Paralleling
any application where high reliability is required. The ll Hermetically Sealed
HEXFET transistor's totally isolated package eliminates the " Electrically Isolated
need for additional isolating material between the device " Dynamic dv/dt Rating
and the heatsink. This improves thermal efficiency and " Light-weight
reduces drain capacitance.
Absolute Maximum Ratings
Parameter Units
ID @ VGS = -10\/, TC = 25°C Continuous Drain Current -11
ID @ VGS = -10\/, TC = 100°C Continuous Drain Current -7.0 A
IDM Pulsed Drain Current C) -44
PD @ TC = 25°C Max. Power Dissipation 125 W
Linear Derating Factor 1.0 W/°C
VGS Gate-to-Source Voltage 120 V
EAS Single Pulse Avalanche Energy © 500 mJ
IAR Avalanche Current co -11 A
EAR Repetitive Avalanche Energy C) 12.5 mJ
dv/dt Peak Diode Recovery dv/dt © -5.0 V/ns
TJ Operating Junction -55 to 150
TSTG Storage Temperature Range oC
Lead Temperature 300 ( 0.063 in.(1.6mm) from case for 10s)
Weight 9.3 (typical) g
For footnotes refer to the last page
1
11/18/02
IRFM9240
International
TOR Rectifier
Electrical Characteristics @Tl = 25°C (Unless Otherwise Specified)
Parameter Min Typ Max Units Test Conditions
BVDSS Drain-to-Source Breakdown Voltage -200 - - V VGS = 0V, ID = -1.0mA
ABVDSS/ATJ Temperature Coemcient of Breakdown - -0.2 - V/°C Reference to 25°C, ID = -1.0mA
Voltage
RDS(on) Static Drain-to-Source On-State - - 0.51 n VGS = -10V, ID = -7.0A©
Resistance - - 0.52 VGS = -10V, ID = -11A ©
Vegan) Gate Threshold Voltage -2.0 - -4.0 V VDS = VGS, t = -250pA
gfs Forward Transconductance 4.0 - - S (U) 1/DS > -15\/, ts = -7.0A©
IDSS Zero Gate Voltage Drain Current - - -25 V03: -160V, VGS= 0V
- - -250 HA VDs = -160V
VGS = 0V, TJ = 125°C
less Gate-to-Source Leakage Forward - - -100 nA VGS = -20V
less Gate-to-Source Leakage Reverse - - 100 VGS =20V
09 Total Gate Charge - - 60 VGS = -10\/, ID: -11A
Qgs Gate-to-Source Charge - - 15 nC VDS = -100V
Qgd Gate-to-Drain ('Miller') Charge - - 38
td(on) Turn-On Delay Time - - 35 VDD = -100\/, ID = -11A,
tr Rise Time - - 85 ns RG =9.1S2, VGS = -10V
td(om Turn-Off Delay Time - - 85
If FallTime - - 65
LS + LD Total Inductance - 6.8 - nH Measured from drain lead (6mm/
0.25in. from package) to source lead
(6mm/O.25in. from package)
Ciss Input Capacitance - 1200 VGS = 0V, VDS = -25V
Coss Output Capacitance - 570 - pF t= 1.0MHz
Crss Reverse Transfer Capacitance - 81 -
Source-Drain Diode Ratings and Characteristics
Parameter Min Typ Max Units Test Conditions
Is Continuous Source Current (Body Diode) - - -11 A
ISM Pulse Source Current (Body Diode) co - - -44
VSD Diode Forward Voltage - - -4.6 V T] = 25°C, Is = -11A, VGS = 0V CI)
trr Reverse Recovery Time - - 440 nS Tj = 25''C, IF = -11A, di/dt s-1OOA/ps
QRR Reverse Recovery Charge - - 7.2 pc VDD 3 -50V (4)
ton Forward Turn-On Time Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by Ls + LD.
Thermal Resistance
Parameter Min Typ Max Units Test Conditions
RthJC Junction-to-Case - - 1.0
RthCS Case-to-sink - 0.21 - "C/W
RthJA Junction-to-Ambient - - 48 Typical socket mount
For footnotes refer to the last page
